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公开(公告)号：US20130143338A1
公开(公告)日：2013-06-06
申请号：US13310432
申请日：2011-12-02
IPC分类号： H01L21/50
CPC分类号： H01S5/405 , H01S5/0202 , H01S5/02272 , H01S5/02476 , H01S5/0287 , H01S5/4018
摘要： A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.
摘要翻译： 公开了制造高密度激光二极管堆叠的方法。 激光二极管条各自具有发射极表面和发射器表面两侧的相对表面。 每个激光二极管棒在相对表面上具有金属化层，并且在至少一个金属化层上具有焊料层。 在切割晶片之前将焊料层施加到半导体晶片以形成激光二极管条。 激光二极管条布置成堆叠，使得条的发射器表面面向相同的方向。 将激光二极管棒的叠层放置在真空室中。 防反射涂层沉积在腔室中的激光二极管条的发射器表面上。 通过施加足以使室中的焊料层回流的温度来连接激光二极管条。
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公开(公告)号：US08518814B2
公开(公告)日：2013-08-27
申请号：US13310432
申请日：2011-12-02
IPC分类号： H01L21/44
CPC分类号： H01S5/405 , H01S5/0202 , H01S5/02272 , H01S5/02476 , H01S5/0287 , H01S5/4018
摘要： A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber.
摘要翻译： 公开了制造高密度激光二极管堆叠的方法。 激光二极管条各自具有发射极表面和发射器表面两侧的相对表面。 每个激光二极管棒在相对表面上具有金属化层，并且在至少一个金属化层上具有焊料层。 在切割晶片之前将焊料层施加到半导体晶片以形成激光二极管条。 激光二极管条布置成堆叠，使得条的发射器表面面向相同的方向。 将激光二极管棒的叠层放置在真空室中。 防反射涂层沉积在腔室中的激光二极管条的发射器表面上。 通过施加足以使室中的焊料层回流的温度来连接激光二极管条。
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