Methods and systems for using resistivity of sensor film in an element shunt
    3.
    发明授权
    Methods and systems for using resistivity of sensor film in an element shunt 有权
    在元件分流中使用传感器膜电阻率的方法和系统

    公开(公告)号:US08274762B2

    公开(公告)日:2012-09-25

    申请号:US12130389

    申请日:2008-05-30

    IPC分类号: G11B5/33

    摘要: A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.

    摘要翻译: 一种方法的系统包括由多个薄膜层形成的传感器堆叠; 由与所述传感器堆叠的至少一些相同层形成的分流器,所述分流器与所述传感器堆叠间隔开; 耦合到传感器堆叠和分流器的第一引线; 以及耦合到传感器堆叠和分流器的第二引线。 一个实施例中的方法包括形成多个薄膜层; 去除用于限定传感器堆叠的至少一部分的薄膜层的一部分和与传感器堆叠间隔开的分流器的至少一部分; 形成耦合到传感器堆叠的至少一部分和分流器的至少一部分的第一引线和耦合到传感器堆叠的至少一部分和分流器的至少一部分的第二引线。 还介绍了其他系统和方法。

    METHODS AND SYSTEMS FOR USING RESISTIVITY OF SENSOR FILM IN AN ELEMENT SHUNT
    4.
    发明申请
    METHODS AND SYSTEMS FOR USING RESISTIVITY OF SENSOR FILM IN AN ELEMENT SHUNT 有权
    传感器电阻在元件分析中的电阻率的方法和系统

    公开(公告)号:US20090296285A1

    公开(公告)日:2009-12-03

    申请号:US12130389

    申请日:2008-05-30

    摘要: A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.

    摘要翻译: 一种方法的系统包括由多个薄膜层形成的传感器堆叠; 由与所述传感器堆叠的至少一些相同层形成的分流器,所述分流器与所述传感器堆叠间隔开; 耦合到传感器堆叠和分流器的第一引线; 以及耦合到传感器堆叠和分流器的第二引线。 一个实施例中的方法包括形成多个薄膜层; 去除用于限定传感器堆叠的至少一部分的薄膜层的一部分和与传感器堆叠间隔开的分流器的至少一部分; 形成耦合到传感器堆叠的至少一部分和分流器的至少一部分的第一引线和耦合到传感器堆叠的至少一部分和分流器的至少一部分的第二引线。 还介绍了其他系统和方法。

    Magnetic sensor with extended free layer and overlaid leads
    6.
    发明授权
    Magnetic sensor with extended free layer and overlaid leads 有权
    具有扩展自由层和重叠导线的磁性传感器

    公开(公告)号:US07652855B2

    公开(公告)日:2010-01-26

    申请号:US11595186

    申请日:2006-11-09

    IPC分类号: G11B5/39

    摘要: A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

    摘要翻译: 用传感器和自由层尺寸描述磁传感器的引线覆盖设计,使得由于形状各向异性,自由层由大的退磁场稳定。 在一个实施例中,引线下的巨磁阻(GMR)效应通过去除自由层上方的反铁磁(AFM)和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中,电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中,绝缘材料也沉积在引线焊盘下方,使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

    Rie defined CPP read heads
    7.
    发明授权
    Rie defined CPP read heads 失效
    Rie定义了CPP读取头

    公开(公告)号:US07324311B2

    公开(公告)日:2008-01-29

    申请号:US10857095

    申请日:2004-05-28

    申请人: Kim Y. Lee Tsann Lin

    发明人: Kim Y. Lee Tsann Lin

    IPC分类号: G11B5/33 G11B5/127

    CPC分类号: G11B5/39

    摘要: A magnetoresistive sensor having a trackwidth defined by AFM biasing layers disposed beneath a free layer of the sensor. The present invention provides a current in plane magnetoresistive sensor that includes a non-magnetic, electrically conductive layer in a trackwidth region. The non-magnetic, electrically conductive layer can be for example Ta, but could be some other material. This non-magnetic, electrically conductive layer has first and second laterally opposed sides and a planar upper surface. First and second insulating layers are formed at each of the sides of the non-magnetic, electrically conductive layer, and bias layers extend laterally outward from the insulation layers. The bias layers can be constructed of either an antiferromagnetic (AFM) material or could be constructed of a hard magnetic material such as CoPtCr. The bias layers have planar upper surfaces that are coplanar with the upper surface of the non-magnetic, electrically conductive layer.

    摘要翻译: 具有由设置在传感器的自由层下方的AFM偏置层限定的轨道宽度的磁阻传感器。 本发明提供一种电流平面磁阻传感器,其包括轨道宽度区域中的非磁性导电层。 非磁性导电层可以是例如Ta,但可以是一些其它材料。 该非磁性导电层具有第一和第二横向相对的侧面和平坦的上表面。 第一和第二绝缘层形成在非磁性导电层的每个侧面,并且偏压层从绝缘层横向向外延伸。 偏置层可以由反铁磁(AFM)材料构成,或者可以由诸如CoPtCr的硬磁材料构成。 偏置层具有与非磁性导电层的上表面共面的平面上表面。

    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure
    8.
    发明授权
    Magnetic sensor having a physically hard insulation layer over a magnetic bias structure 失效
    磁传感器在磁偏置结构上具有物理硬绝缘层

    公开(公告)号:US08213132B2

    公开(公告)日:2012-07-03

    申请号:US11938677

    申请日:2007-11-12

    IPC分类号: G11B5/39

    摘要: A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.

    摘要翻译: 通过限定形成在第一和第二硬偏置层之间的沟槽并将传感器沉积到沟槽中的窄轨道宽度磁阻传感器。 传感器可以包括夹在第一和第二导电引线层之间的传感器堆叠。 第一和第二电绝缘侧壁形成在传感器堆叠的任一侧。 第一和第二硬偏压层从传感器堆叠的侧面延伸,通过第一和第二电绝缘侧壁与传感器堆叠分离。 第一和第二物理硬绝缘层设置在每个硬偏压层上。

    Magnetic recording head with overlaid leads
    9.
    发明申请
    Magnetic recording head with overlaid leads 有权
    带重叠导线的磁记录头

    公开(公告)号:US20080112090A1

    公开(公告)日:2008-05-15

    申请号:US11595186

    申请日:2006-11-09

    IPC分类号: G11B5/33

    摘要: A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

    摘要翻译: 用传感器和自由层尺寸描述磁传感器的引线覆盖设计,使得由于形状各向异性,自由层由大的退磁场稳定。 在一个实施例中,引线下的巨磁阻(GMR)效应通过去除自由层上方的反铁磁(AFM)和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中,电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中,绝缘材料也沉积在引线焊盘下方,使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。