公开(公告)号：US07988835B2

公开(公告)日：2011-08-02

申请号：US11519154

申请日：2006-09-12

申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata ,  Yuichi Setsuhara

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  C23C16/50

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（288nm）的比率（Si（288nm）/ H＆bgr）） （288nm）的波长288nm的硅原子和发光强度H＆bgr; 的等离子体发射波长为484nm的氢原子为10.0以下，优选为3.0以下，或0.5以下，形成粒径为20nm以下或10nm以下的硅点（SiD） 在500度的低温下直接在基板（S）上。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

公开(公告)号：US20070007123A1

公开(公告)日：2007-01-11

申请号：US11519154

申请日：2006-09-12

申请人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata

发明人： Eiji Takahashi ,  Takashi Mikami ,  Shigeaki Kishida ,  Kenji Kato ,  Atsushi Tomyo ,  Tsukasa Hayashi ,  Kiyoshi Ogata

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631

摘要： There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

摘要翻译： 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气（或氢气和含硅烷气体）供给到设置有硅溅射靶（例如，靶30）的真空室（1）中，或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室（1）中，向气体施加高频功率，从而产生等离子体，使得发射强度Si（（（nm）/ Hbeta） 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下，优选为3.0以下，0.5以下，硅点（SiD ），在500度的低温下直接在基板（S）上形成粒径为20nm以下或10nm以下的粒径。 在等离子体中（如果存在硅溅射靶，则具有化学溅射）。

公开(公告)号：US6051120A

公开(公告)日：2000-04-18

申请号：US198584

申请日：1998-11-24

申请人： Shigeaki Kishida ,  Takashi Mikami ,  Hiroya Kirimura ,  Kiyoshi Ogata

发明人： Shigeaki Kishida ,  Takashi Mikami ,  Hiroya Kirimura ,  Kiyoshi Ogata

IPC分类号： C23C14/32 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  C23C14/46

CPC分类号： H01J37/3233

摘要： There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

摘要翻译： 提供了一种薄膜形成装置，其中高成本的等离子体由成膜室7中的原料气体构成，薄膜通过高等离子体在成膜室7中的基板12的表面上形成 频率，并且同时通过将离子束4照射到基板12的表面上来控制薄膜的特性，其特征在于：基板12由正方形表面或矩形表面的正方形板 ; 并且薄膜形成装置设置有用于在基板12的表面侧上将高频等离子体形成立方体或长方体以覆盖基板12的整个表面的高频电极13。

公开(公告)号：US5122483A

公开(公告)日：1992-06-16

申请号：US634528

申请日：1990-12-27

申请人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

发明人： Shigeki Sakai ,  Kiyoshi Ogata ,  Tsukasa Hayashi

IPC分类号： C23C14/10 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L21/02164 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/318 ,  H01L21/3185

摘要： A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

摘要翻译： 一种形成高绝缘性氧化硅薄膜的方法，包括以下步骤：提供衬底，在衬底上沉积硅，以及同时或交替地将氧离子束或由氧气和惰性气体组成的混合气体注入到离子束 硅。 氧化硅可以与注入惰性气体的离子一起沉积在衬底上。 制造的其他金属与氧或氮阳离子的注入一起沉积。

公开(公告)号：US06116187A

公开(公告)日：2000-09-12

申请号：US315145

申请日：1999-05-20

申请人： Hiroshi Murakami ,  Takashi Mikami ,  Kiyoshi Ogata

发明人： Hiroshi Murakami ,  Takashi Mikami ,  Kiyoshi Ogata

IPC分类号： C30B25/02 ,  C23C16/50 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00

CPC分类号： H01J37/3233 ,  C23C16/517

摘要： A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

摘要翻译： 薄膜形成装置具有作为成膜室的真空室，等离子体产生单元和离子源。 在真空室中，放置基板，在基板上形成薄膜。 等离子体产生单元分解引入真空室的源气体，以在真空室内的基板的成膜表面附近产生源气体的等离子体。 离子源设置在真空室周围。 离子源产生离子束，其被引出以基本上平行于衬底的成膜表面引导以照射等离子体。

公开(公告)号：US07033462B2

公开(公告)日：2006-04-25

申请号：US10305008

申请日：2002-11-27

申请人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

发明人： Yasuo Murakami ,  Takashi Mikami ,  Kiyoshi Ogata ,  Hiroshi Murakami

IPC分类号： C23C14/34

CPC分类号： H01J37/32055 ,  C23C14/325 ,  H01J2237/022

摘要： To prevent the film forming characteristic deterioration by a magnetic field of a magnetic filter to thereby make vacuum arc vapor deposition uniform, in the invention, plurality of magnets includes a terminal magnet closest to a plasma injection hole located at the other end of duct and specified magnets. The terminal magnet located closest to plasma injection hole may be set to incline to a plasma injection plane of the plasma injection hole. Further, at lease one of specified magnets may be inclined to the plasma injection plane. Further more, at least one of magnetic field generating coils may be formed with a plurality of electromagnetic coils, which are inclined at different angles with respect to a cross section of the duct. One of electromagnetic coils may be selectively energized by current on a basis of setting and controlling of deflection magnetic field generated by the magnetic filter.

公开(公告)号：US08675817B2

公开(公告)日：2014-03-18

申请号：US13194430

申请日：2011-07-29

申请人： Kiyoshi Ogata ,  Tetsuo Kani ,  Makoto Kanbe ,  Yoshihiro Takeda ,  Takahisa Sato

发明人： Kiyoshi Ogata ,  Tetsuo Kani ,  Makoto Kanbe ,  Yoshihiro Takeda ,  Takahisa Sato

IPC分类号： H05G1/10

CPC分类号： H01J35/16 ,  H01J35/045 ,  H01J2235/1216 ,  H01J2235/1291 ,  H01J2235/166 ,  H05G1/06 ,  H05G1/10

摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.

摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高压端子而形成的升压电路。 升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其本身的高电压端子对应于阴极 的X射线管。 从X射线管的阴极延伸到外部的引线与升压电路的高压端子连接。 形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

公开(公告)号：US20120027179A1

公开(公告)日：2012-02-02

申请号：US13194430

申请日：2011-07-29

申请人： Kiyoshi Ogata ,  Tetsuo Kani ,  Makoto Kanbe ,  Yoshihiro Takeda ,  Takahisa Sato

发明人： Kiyoshi Ogata ,  Tetsuo Kani ,  Makoto Kanbe ,  Yoshihiro Takeda ,  Takahisa Sato

IPC分类号： H05G1/10

CPC分类号： H01J35/16 ,  H01J35/045 ,  H01J2235/1216 ,  H01J2235/1291 ,  H01J2235/166 ,  H05G1/06 ,  H05G1/10

摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.

摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高电压端子而形成的升压电路。 升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其自身的高压端子对应于阴极 的X射线管。 从X射线管的阴极延伸到外部的引线与升压电路的高电压端子连接。 形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

公开(公告)号：US20050142701A1

公开(公告)日：2005-06-30

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。

公开(公告)号：US06815717B2

公开(公告)日：2004-11-09

申请号：US09988585

申请日：2001-11-20

申请人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

发明人： Kazuhiko Horikoshi ,  Kiyoshi Ogata ,  Miwako Nakahara ,  Takuo Tamura ,  Yasushi Nakano ,  Ryoji Oritsuki ,  Toshihiko Itoga ,  Takahiro Kamo

IPC分类号： H01L2904

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.