摘要:
A frequency converter includes a transistor pair having a first transistor and a second transistor respectively having collector terminals commonly connected to each other and emitter terminals commonly connected to each other, the commonly-connected collector terminals of the transistor pair being connected to a power supply terminal by way of a first resistor, a third transistor having a collector terminal connected to the power supply terminal by way of a second resistor and an emitter terminal connected to the commonly-connected emitter terminals of the transistor pair, a third resistor having an end connected to the commonly-connected emitter terminals of the transistor pair, and another end grounded by way of a constant current source, and an output terminal connected to the commonly-connected collector terminals of the transistor pair. The frequency converter can exhibit an excellent saturation characteristic and an excellent distortion characteristic even when operating from a low voltage and/or a low current.
摘要:
A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.
摘要:
A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a plurality of transistors 12-1 to 12-N at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to each transistors 12-1 to 12-N according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.
摘要:
A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a transistor 12 at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to the transistor 12 according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.
摘要:
In a multi-layer substrate module receiving from an external earth node (20) supply of a reference potential (Vss) for grounding, a plurality of ground lines (170-1, 170-2, 170-3) are provided respectively corresponding to a plurality of internal circuits (210, 220, 230). Moreover, a common node (Ncmn) for coupling the ground lines (170-1, 170-2, 170-3) is provided in an insulating layer (105C) of the multi-layer substrate module. The common node (Ncmn) is electrically coupled to the earth node 20 through a ground pin terminal 204 shared by the plurality of internal circuits (210, 220, 230). Preferably, the common node (Ncmn) is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits (210, 220, 230), can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits (210, 220, 230) is prevented, enabling stable operation.
摘要:
In a multi-layer substrate module receiving from an external earth node supply of a reference potential for grounding, a plurality of ground lines are provided respectively corresponding to a plurality of internal circuits. Moreover, a common node for coupling the ground lines is provided in an insulating layer of the multi-layer substrate module. The common node is electrically coupled to the earth node through a ground pin terminal shared by the plurality of internal circuits. Preferably, the common node is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits, can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits is prevented, enabling stable operation.
摘要:
A non-linearity compensating circuit for a high frequency amplifier includes a first divider for dividing a high frequency input signal into two signals, a distortion generating amplifier for non-linearly amplifying the first output of the first divider, a linear amplifier for linearly amplifying the second output from the first divider, a second divider for dividing the output of the linear amplifier into first and second signals, a first combiner for combining the output of the distortion generating amplifier with the first signal to extract the distortion component of the distortion generating amplifier, and a second combiner for combining the second signal with the distortion component.
摘要:
A high frequency amplifier includes a constant voltage driven amplifier 1 using as its amplifying element a bipolar transistor 7 with its base biased by a constant voltage, and a constant current driven amplifier 2 using as its amplifying element a bipolar transistor 8 with its base biased by a constant current. The idle current of the constant current driven amplifier 2 is set at a low value. In accordance with the idle current, the idle current of the constant voltage driven amplifier 1 is adjusted, and the two amplifiers are combined in parallel.
摘要:
A radio frequency circuit is disclosed which includes a low-noise amplifier and a mixer integrated on the same semiconductor chip by using a silicon BiCMOS process. The low-noise amplifier has a silicon bipolar junction transistor and the mixer has a silicon MOS type field effect transistor. In the radio frequency circuit, the mixer can include two silicon MOS type field effect transistors one of which has a source connected to a drain of the other silicon MOS type field effect transistor and a gate of one silicon MOS type field effect transistor is supplied with a local signal and a gate of the other silicon MOS type field effect transistor is supplied with a radio frequency signal amplified by the low-noise amplifier.
摘要:
The detector comprises a first distributor for distributing a signal wave, a 45 degree shifter for shifting a local oscillation, a first even harmonic mixer and a second even harmonic mixer for generating a mixed wave between a double frequency wave of said local oscillation wave and said signal wave. The present invention can be used for increasing the accuracy and downsizing of quadrature mixer used in a receiving transmitting apparatus of a wireless communication system.