利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.038 秒)

    Method for heat treating a silicon wafer
    5.
    发明授权
    Method for heat treating a silicon wafer 有权
    硅晶片热处理方法

    公开(公告)号：US08399341B2

    公开(公告)日：2013-03-19

    申请号：US13387125

    申请日：2010-05-17

    申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    IPC分类号： H01L21/20

    CPC分类号： H01L21/3225

    摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

    摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

    METHOD FOR HEAT TREATING A SILICON WAFER
    6.
    发明申请
    METHOD FOR HEAT TREATING A SILICON WAFER 有权
    热处理硅砂的方法

    公开(公告)号：US20120184091A1

    公开(公告)日：2012-07-19

    申请号：US13387125

    申请日：2010-05-17

    申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    IPC分类号： H01L21/263

    CPC分类号： H01L21/3225

    摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

    摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二次热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

    Manufacturing method for silicon wafer
    7.
    发明授权
    Manufacturing method for silicon wafer 有权
    硅晶片的制造方法

    公开(公告)号：US07977219B2

    公开(公告)日：2011-07-12

    申请号：US12512229

    申请日：2009-07-30

    申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    IPC分类号： H01L21/20

    CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  H01L21/3225

    摘要： In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

    摘要翻译： 在硅晶片的制造方法中，在硅晶片上进行第一热处理工艺，同时引入具有0.01体积％的氧气的第一气体。 ％以上1.00体积％ ％以下和稀有气体，并且在停止引入第一气体并引入具有20体积％的氧气的第二气体的同时进行第二热处理工艺。 ％以上100体积％ ％以下，稀有气体。 在第一热处理工艺中，将硅晶片以第一加热速率快速加热到1300℃或更高的第一温度和硅的熔点或更低，并保持在第一温度。 在第二热处理工艺中，将硅晶片保持在第一温度，并以第一冷却速度从第一温度快速冷却。