摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要:
The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize the output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of the cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, where a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要:
A semiconductor integrated circuit includes a plurality of circuit cells each including a pad on a semiconductor chip. Each of the circuit cells includes a high-side transistor, a level shift circuit, a low-side transistor, a pre-driver, and a pad. The high-side transistor and the low-side transistor are arranged to face each other with the pad interposed therebetween.
摘要:
Control circuits for the cut-off and drive control of video equipment. A first control device includes a cut-off control circuit and drive control circuit for use in conventional modes. A second control device includes a cut-off control circuit for mode switching and a drive control circuit for mode switching, independent of the first control device. The cut-off and drive adjustments made for every mode switching operation are unnecessary, and the mode switching based on off set data is possible.
摘要:
In order to reduce a circuit scale such as a brightness adjustment circuit or the number of pins in an IC chip, in the brightness adjustment circuit, a brightness adjusted video signal (internal video signal) output from an analog signal synthesis circuit or a D/A converter is input to one input terminal of a switch and a sample/hold circuit. The sample/hold circuit holds a voltage of a level in accordance with the pedestal level of the internal video signal at a timing in accordance with a sampling pulse in synchronization with the internal video signal. A clamp circuit clamps the pedestal level of an external video signal in accordance with a clamp pulse, using the voltage held by the sample/hold circuit as the reference voltage, and input it to the other input terminal. The output terminal of the switch is connected to an amplifier.
摘要:
The automatic cut-off system includes a video data processing circuit, a cut-off control circuit, a drive circuit, and a level control section. The video data processing circuit adds a cut-off reference pulse having a predetermined level to primary-color signals of red (R), green (G) and blue (B) at different timings within a single vertical blanking interval, and outputs latch timing signals respectively indicating the timings. The cut-off control circuit shifts a level of each primary-color signal having the cut-off reference pulse added thereto based on a corresponding cut-off control signal. The drive circuit drives each cathode of a CRT (cathode-ray tube) based on a corresponding one of the shifted primary-color signals, and outputs a voltage corresponding to each cathode current as a common feedback signal. The level control section latches the feedback signal in response to each latch timing signal, and outputs the cut-off control signal of one of the primary-color signals.