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    Light-emitting device and manufacturing method thereof
    2.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US09705029B2

    公开(公告)日：2017-07-11

    申请号：US14901415

    申请日：2013-06-26

    申请人： EPISTAR CORPORATION

    发明人： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

    IPC分类号： H01L33/62 ,  H01L33/02 ,  H01L25/075 ,  H01L23/00 ,  H01L21/66 ,  H01L33/36

    CPC分类号： H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

    摘要： The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

    Method of selectively transferring semiconductor device
    4.
    发明授权
    Method of selectively transferring semiconductor device 有权
    选择性地转移半导体器件的方法

    公开(公告)号：US09508894B2

    公开(公告)日：2016-11-29

    申请号：US14908886

    申请日：2013-07-29

    申请人： EPISTAR CORPORATION

    发明人： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

    IPC分类号： H01L33/62 ,  H01L33/00 ,  H01L21/683

    CPC分类号： H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

    摘要： A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    摘要翻译： 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

    Method for making light-emitting device
    5.
    发明授权
    Method for making light-emitting device 有权
    制造发光装置的方法

    公开(公告)号：US09508891B2

    公开(公告)日：2016-11-29

    申请号：US14550016

    申请日：2014-11-21

    申请人： EPISTAR CORPORATION

    发明人： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Wen-Luh Liao ,  Shou-Lung Chen ,  Chien-Fu Huang

    IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/10

    CPC分类号： H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

    摘要： A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

    摘要翻译： 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

    Light-emitting structure
    6.
    发明授权
    Light-emitting structure 有权
    发光结构

    公开(公告)号：US09406719B2

    公开(公告)日：2016-08-02

    申请号：US14924264

    申请日：2015-10-27

    申请人： EPISTAR CORPORATION

    发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

    IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/38

    CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.

    摘要翻译： 1.一种发光结构，包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽，包括露出衬底的底部; 布置在所述沟槽上的绝缘层，其适配地覆盖所述第一单元和所述第二单元的底部和侧壁; 以及电连接，其顺应地覆盖绝缘层，电连接第一单元和第二单元，并且包括桥接部分和从桥接部分延伸的接合部分，其中桥接部分比接合部分宽，桥接部分覆盖 沟槽和接合部分覆盖第一单元和第二单元。

    Optoelectronic device and the manufacturing method thereof
    7.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US09006774B2

    公开(公告)日：2015-04-14

    申请号：US13932661

    申请日：2013-07-01

    申请人： Epistar Corporation

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Ching-Pei Lin

    IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/40 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

    摘要翻译： 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。