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公开(公告)号：US07248988B2
公开(公告)日：2007-07-24
申请号：US10791099
申请日：2004-03-01
IPC分类号： G06F15/00
CPC分类号： G01R31/2874 , G01K7/42 , G01R31/2879
摘要： Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.
摘要翻译： 老化测试中降低温度变化的系统和方法。 在一个实施例中，测量被测集成电路消耗的功率。 测量与集成电路相关的环境温度。 通过调整集成电路的体偏置电压来实现集成电路的期望结温。 通过控制各个集成电路的温度，可以降低老化试验期间的温度变化。
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公开(公告)号：US08843344B2
公开(公告)日：2014-09-23
申请号：US12506070
申请日：2009-07-20
CPC分类号： G01R31/2874 , G01K7/42 , G01R31/2879
摘要： Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.
摘要翻译： 老化测试中降低温度变化的系统和方法。 在一个实施例中，测量被测集成电路消耗的功率。 测量与集成电路相关的环境温度。 通过调整集成电路的体偏置电压来实现集成电路的期望结温。 通过控制各个集成电路的温度，可以降低老化试验期间的温度变化。
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公开(公告)号：US07834648B1
公开(公告)日：2010-11-16
申请号：US12330324
申请日：2008-12-08
IPC分类号： G01R31/02
CPC分类号： G01R31/2879 , G01R31/2817
摘要： Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.
摘要翻译： 描述了在老化测试期间降低温度耗散的系统和方法。 被测器件每个都受到体偏置电压的影响。 体偏置电压可用于控制结温（例如，在被测器件测量的温度）。 施加到每个待测器件的体偏置电压可以逐个设备调整，以在每个器件上达到基本上相同的结温。
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公开(公告)号：US07242205B1
公开(公告)日：2007-07-10
申请号：US11136038
申请日：2005-05-23
IPC分类号： G01R31/02
CPC分类号： G01R31/2879 , G01R31/2817 , G01R31/2875 , G01R31/31721
摘要： Systems and methods for reducing temperature dissipation during burn-in testing are described. A plurality of devices under test are each subject to a body bias voltage. The body bias voltage reduces leakage current associated with the devices under test. Accordingly, heat dissipation is reduced during burn-in. The body bias voltage is selected to achieve a desired junction temperature at the devices under test.
摘要翻译： 描述了在老化测试期间降低温度耗散的系统和方法。 被测试的多个器件各自经受体偏置电压。 身体偏置电压降低与被测器件相关的漏电流。 因此，在老化期间散热降低。 选择体偏置电压以在被测器件达到所需的结温。
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公开(公告)号：US07463050B1
公开(公告)日：2008-12-09
申请号：US11139116
申请日：2005-05-26
IPC分类号： G01R31/26
CPC分类号： G01R31/2879 , G01R31/2817
摘要： Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.
摘要翻译： 描述了在老化测试期间降低温度耗散的系统和方法。 被测器件每个都受到体偏置电压的影响。 体偏置电压可用于控制结温（例如，在被测器件测量的温度）。 施加到每个待测器件的体偏置电压可以逐个设备调整，以在每个器件上达到基本上相同的结温。
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公开(公告)号：US06897671B1
公开(公告)日：2005-05-24
申请号：US10791241
申请日：2004-03-01
CPC分类号： G01R31/2879 , G01R31/2817 , G01R31/2875 , G01R31/31721
摘要： Systems and methods for reducing temperature dissipation during burn-in testing are described. A plurality of devices under test are each subject to a body bias voltage. The body bias voltage is selected to substantially minimize leakage current associated with the plurality of devices under test. Accordingly, heat dissipation is reduced during burn-in.
摘要翻译： 描述了在老化测试期间降低温度耗散的系统和方法。 被测试的多个器件各自经受体偏置电压。 选择体偏置电压以基本上最小化与被测试的多个器件相关联的泄漏电流。 因此，在老化期间散热降低。
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公开(公告)号：US20090316750A1
公开(公告)日：2009-12-24
申请号：US12488379
申请日：2009-06-19
IPC分类号： G01K13/00
CPC分类号： G01R31/2874 , G01K7/42 , G01R31/2879
摘要： Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.
摘要翻译： 老化测试中降低温度变化的系统和方法。 在一个实施例中，测量被测集成电路消耗的功率。 测量与集成电路相关的环境温度。 通过调整集成电路的体偏置电压来实现集成电路的期望结温。 通过控制各个集成电路的温度，可以降低老化试验期间的温度变化。
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公开(公告)号：US20090289654A1
公开(公告)日：2009-11-26
申请号：US12506070
申请日：2009-07-20
IPC分类号： G01R31/26
CPC分类号： G01R31/2874 , G01K7/42 , G01R31/2879
摘要： Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.
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公开(公告)号：US07595652B2
公开(公告)日：2009-09-29
申请号：US11827290
申请日：2007-07-10
IPC分类号： G01R31/02
CPC分类号： G01R31/2879 , G01R31/2817 , G01R31/2875 , G01R31/31721
摘要： A plurality of devices under test are each subject to a body bias voltage during burn-in testing. The body bias voltage reduces leakage current associated with the devices under test. A test controller can access a store of information including leakage current as a function of body bias voltage and can select a body bias voltage that corresponds to the minimum leakage current in the store of information. A voltage supply coupled to the test controller can provide the body bias voltage corresponding to the minimum leakage current to the devices under test during the burn-in testing.
摘要翻译： 被测试的多个器件在老化测试期间各自经受体偏置电压。 身体偏置电压降低与被测器件相关的漏电流。 测试控制器可以访问包括作为体偏置电压的函数的泄漏电流的信息存储，并且可以选择对应于信息存储中的最小泄漏电流的体偏置电压。 耦合到测试控制器的电压电源可以在老化测试期间向被测器件提供对应于最小漏电流的体偏置电压。
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公开(公告)号：US07565259B2
公开(公告)日：2009-07-21
申请号：US11881006
申请日：2007-07-24
IPC分类号： G01K17/00
CPC分类号： G01R31/2874 , G01K7/42 , G01R31/2879
摘要： Systems and methods for reducing temperature variation during burn-in testing. In one embodiment, power consumed by an integrated circuit under test is measured. An ambient temperature associated with the integrated circuit is measured. A desired junction temperature of the integrated circuit is achieved by adjusting a body bias voltage of the integrated circuit. By controlling temperature of individual integrated circuits, temperature variation during burn-in testing can be reduced.
摘要翻译： 老化测试中降低温度变化的系统和方法。 在一个实施例中，测量被测集成电路消耗的功率。 测量与集成电路相关的环境温度。 通过调整集成电路的体偏置电压来实现集成电路的期望结温。 通过控制各个集成电路的温度，可以降低老化试验期间的温度变化。
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