MANUFACTURE OF SILICON-BASED DEVICES HAVING DISORDERED SULFUR-DOPED SURFACE LAYERS
    1.
    发明申请
    MANUFACTURE OF SILICON-BASED DEVICES HAVING DISORDERED SULFUR-DOPED SURFACE LAYERS 有权
    制造具有异常硫化表面层的硅基器件

    公开(公告)号:US20080044943A1

    公开(公告)日:2008-02-21

    申请号:US10950248

    申请日:2004-09-24

    IPC分类号: H01L21/00

    摘要: The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

    摘要翻译: 本发明提供了通过多个时间短的激光脉冲(例如飞秒脉冲)照射硅衬底(例如,n掺杂晶体硅)的至少一个表面位置来制造辐射吸收半导体晶片的方法,同时曝光 该物质的位置,例如具有给电子成分的物质,例如SF 6,以产生基本上无序的表面层(即,微结构化层),其包含该给电子成分的浓度 ,例如硫。 衬底也在升高的温度下退火并持续一段选择以增强表面层中的电荷载流子密度。 例如,衬底可以在约700K至约900K的范围内的温度下退火。

    Silicon-based visible and near-infrared optoelectric devices
    3.
    发明申请
    Silicon-based visible and near-infrared optoelectric devices 有权
    硅基可见光和近红外光电器件

    公开(公告)号:US20050127401A1

    公开(公告)日:2005-06-16

    申请号:US10950230

    申请日:2004-09-24

    IPC分类号: H01L31/00 H01L31/109

    摘要: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

    摘要翻译: 一方面,本发明提供一种硅光电检测器,其具有掺杂有平均浓度在约0.5原子%至约1.5原子%范围内的硫夹杂物的表面层。 表面层与衬底的下面部分形成二极管结。 多个电触点允许向结点施加反向偏置电压,以便于响应于表面层的照射而产生电信号,例如光电流。 对于约250nm至约1050nm范围内的入射波长,光电探测器表现出大于约1A / W的响应度,对于较长波长(例如高达约3.5微米),响应度大于约0.1A / W。

    Participant grouping for enhanced interactive experience
    4.
    发明授权
    Participant grouping for enhanced interactive experience 有权
    参与者分组,增强互动体验

    公开(公告)号:US08914373B2

    公开(公告)日:2014-12-16

    申请号:US13458040

    申请日:2012-04-27

    摘要: Representative embodiments of a method for grouping participants in an activity include the steps of: (i) defining a grouping policy; (ii) storing, in a database, participant records that include a participant identifier, a characteristic associated with the participant, and/or an identifier for a participant's handheld device; (iii) defining groupings based on the policy and characteristics of the participants relating to the policy and to the activity; and (iv) communicating the groupings to the handheld devices to establish the groups.

    摘要翻译: 用于分组活动中的参与者的方法的代表性实施例包括以下步骤:(i)定义分组策略; (ii)在数据库中存储包括参与者标识符,与参与者相关联的特征的参与者记录和/或参与者的手持设备的标识符; (iii)根据与政策和活动有关的参与者的政策和特点确定分组; 和(iv)将分组传送到手持设备以建立组。

    CLUSTER ANALYSIS OF PARTICIPANT RESPONSES FOR TEST GENERATION OR TEACHING
    5.
    发明申请
    CLUSTER ANALYSIS OF PARTICIPANT RESPONSES FOR TEST GENERATION OR TEACHING 审中-公开
    用于测试生成或教学的参与者响应的聚类分析

    公开(公告)号:US20130302775A1

    公开(公告)日:2013-11-14

    申请号:US13871627

    申请日:2013-04-26

    IPC分类号: G09B7/00

    CPC分类号: G09B7/00

    摘要: Textual responses to open-ended (i.e., free-response) items provided by participants (e.g., by means of mobile wireless devices) are automatically classified, enabling an instructor to assess the responses in a convenient, organized fashion and adjust instruction accordingly.

    摘要翻译: 由参与者(例如,通过移动无线设备)提供的对开放式(即,自由应答)项目的文本响应被自动分类,使得教练能够以方便且有组织的方式评估响应并相应地调整指令。

    Nanoparticle separation using coherent anti-stokes Raman scattering
    6.
    发明授权
    Nanoparticle separation using coherent anti-stokes Raman scattering 有权
    使用相干反斯托克斯拉曼散射的纳米粒子分离

    公开(公告)号:US08439201B2

    公开(公告)日:2013-05-14

    申请号:US12989833

    申请日:2009-05-21

    IPC分类号: B03B1/00

    CPC分类号: B82B3/0071

    摘要: The invention provides methods and systems for separating particles that exhibit different Raman characteristics. The method can include introducing nanoparticles, on which Raman-active molecules are adsorbed, into a photopolymerizable resin and exposing to excite Raman active vibrational modes of the molecules to generate Raman-shifted radiation suitable for polymerizing the resin such that the Raman-shifted radiation causes selective polymerization of a resin surrounding nanoparticles if the nanoparticles provide a Raman enhancement factor greater than a threshold. In addition, methods for electrically isolating nanoparticles, or selectively removing one type of nanoparticles from collections, are disclosed. These methods rely on generation of blue-shifted anti-Stokes photons to selectively expose portions of a photoresist covering the nanoparticles to those photons. Such exposure can cause a change in the exposed portions (e.g., polymerize or increase solubility to a developing agent), which can be employed to achieve isolation of the nanoparticles or their selective removal.

    摘要翻译: 本发明提供了分离显示不同拉曼特性的颗粒的方法和系统。 该方法可以包括将其上吸附有拉曼活性分子的纳米颗粒引入可光聚合树脂中并暴露于分子的激发拉曼活性振动模式以产生适于聚合树脂的拉曼偏移辐射,使得拉曼位移辐射导致 如果纳米颗粒提供大于阈值的拉曼增强因子,则围绕纳米颗粒的树脂的选择性聚合。 此外,公开了用于电绝缘纳米颗粒或从集合中选择性地除去一种类型的纳米颗粒的方法。 这些方法依赖于产生蓝移的反斯托克斯光子,以选择性地将覆盖纳米颗粒的光刻胶的部分暴露于那些光子。 这种暴露可导致暴露部分的变化(例如,聚合或增加对显影剂的溶解度),其可用于实现纳米颗粒的分离或其选择性去除。

    Laser-induced structuring of substrate surfaces
    7.
    发明授权
    Laser-induced structuring of substrate surfaces 有权
    激光诱导的衬底表面结构

    公开(公告)号:US08143686B2

    公开(公告)日:2012-03-27

    申请号:US12906508

    申请日:2010-10-18

    IPC分类号: H01L31/102

    摘要: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.

    摘要翻译: 一方面,本发明提供了一种通过用第一组偏振短激光脉冲照射衬底(或表面的至少一部分)的表面来处理衬底(例如半导体衬底)的方法,同时使 表面到流体,以在表面上产生多个结构,例如在表面的顶层内。 随后,结构化表面可以用另一组偏振短激光脉冲照射,其具有与初始设定不同的偏振,同时将结构化表面暴露于流体,例如最初用于形成结构化表面的相同流体或不同 流体。 在许多实施例中,第二组偏振激光脉冲使由第一组形成的表面结构分解成较小尺寸的结构,例如纳米尺寸特征,例如纳米尺寸的棒。

    Laser-Induced Structuring of Substrate Surfaces
    8.
    发明申请
    Laser-Induced Structuring of Substrate Surfaces 有权
    激光诱导的基片表面结构

    公开(公告)号:US20110031471A1

    公开(公告)日:2011-02-10

    申请号:US12906508

    申请日:2010-10-18

    IPC分类号: H01L29/66 B82Y99/00

    摘要: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.

    摘要翻译: 一方面,本发明提供了一种通过用第一组偏振短激光脉冲照射衬底(或表面的至少一部分)的表面来处理衬底(例如半导体衬底)的方法,同时使 表面到流体,以在表面上产生多个结构,例如在表面的顶层内。 随后,结构化表面可以用另一组偏振短激光脉冲照射,其具有与初始设定不同的偏振,同时将结构化表面暴露于流体,例如最初用于形成结构化表面的相同流体或不同 流体。 在许多实施例中,第二组偏振激光脉冲使由第一组形成的表面结构分解成较小尺寸的结构,例如纳米尺寸特征,例如纳米尺寸的棒。

    Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
    9.
    发明授权
    Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate 有权
    飞秒激光诱导在半导体衬底上形成亚微米尖峰

    公开(公告)号:US07884446B2

    公开(公告)日:2011-02-08

    申请号:US12235086

    申请日:2008-09-22

    IPC分类号: H01L29/06

    摘要: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

    摘要翻译: 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米尺寸表面特征的半导体衬底。 一方面,公开了一种处理半导体衬底的方法,其包括将衬底的至少一部分表面与流体接触,并将该表面部分暴露于一个或多个飞秒脉冲,以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

    METHOD AND APPARATUS FOR MICROMACHINING BULK TRANSPARENT MATERIALS USING LOCALIZED HEATING BY NONLINEARLY ABSORBED LASER RADIATION, AND DEVICES FABRICATED THEREBY
    10.
    发明申请
    METHOD AND APPARATUS FOR MICROMACHINING BULK TRANSPARENT MATERIALS USING LOCALIZED HEATING BY NONLINEARLY ABSORBED LASER RADIATION, AND DEVICES FABRICATED THEREBY 审中-公开
    使用非线性吸收激光辐射使用本地加热的微型透明材料的方法和装置及其制造的器件

    公开(公告)号:US20090320529A1

    公开(公告)日:2009-12-31

    申请号:US12534202

    申请日:2009-08-03

    IPC分类号: C03B37/09

    摘要: Thermal 3-D microstructuring of photonic structures is provided by depositing laser energy by non-linear absorption into a focal volume about each point of a substrate to be micromachined at a rate greater than the rate that it diffuses thereout to produce a point source of heat in a region of the bulk larger than the focal volume about each point that structurally alters the region of the bulk larger than the focal volume about each point, and by dragging the point source of heat thereby provided point-to-point along any linear and non-linear path to fabricate photonic structures in the bulk of the substrate. Exemplary optical waveguides and optical beamsplitters are thermally micromachined in 3-D in the bulk of a glass substrate. The total number of pulses incident to each point is controlled, either by varying the rate that the point source of heat is scanned point-to-point and/or by varying the repetition rate of the laser, to select the mode supported by the waveguide or beamsplitter to be micromachined. A wide range of passive and active optical and other devices may be thermally micromachined.

    摘要翻译: 光子结构的热3-D微结构化是通过将激光能量通过非线性吸收沉积到围绕基底的每个点的焦点体积中以将其以大于其扩散的速率的速率微加工而产生点热源 在围绕每个点的体积大于焦点体积的区域中,其结构上改变大于围绕每个点的焦点体积的体积的区域,并且通过拖动点光源,从而沿着任何线性和 非线性路径以在基底的大部分中制造光子结构。 示例性光波导和光分束器在玻璃基板的主体中在3-D中热微加工。 通过改变点对点源点对点速率和/或通过改变激光器的重复频率来控制入射到每个点的脉冲总数,以选择波导支持的模式 或分束器进行微加工。 多种无源和有源光学和其他器件可能是热微加工的。