摘要:
A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.
摘要:
A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.
摘要:
A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component having a capacitive magneto-MEMS component, a compensator and an output component for sensing magnetic fields and for providing, in response thereto, an indication of the current present in a respective conductor to be measured. In one embodiment, first and second mechanical sense components are electrically conductive and operate to sense a change in a capacitance between the mechanical sense components in response to a mechanical indicator from a magnetic-to-mechanical converter.
摘要:
A micro-electromechanical system (MEMS) current sensor is described as including a first conductor, a magnetic field shaping component for shaping a magnetic field produced by a current in the first conductor, and a MEMS-based magnetic field sensing component including a magneto-MEMS component for sensing the shaped magnetic field and, in response thereto, providing an indication of the current in the first conductor. A method for sensing a current using MEMS is also described as including shaping a magnetic field produced with a current in a first conductor, sensing the shaped magnetic field with a MEMS-based magnetic field sensing component having a magneto-MEMS component magnetic field sensing circuit, and providing an indication of the current in the first conductor.
摘要:
A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component a structural component comprising a silicon substrate and a compliant layer comprising a material selected from the group consisting of silicon dioxide and silicon nitride, a magnetic-to-mechanical converter coupled to the structural component to provide a mechanical indication of the magnetic field, and a strain responsive component coupled to the structural component to sense the mechanical indication and to provide an indication of the current in the current carrying conductor in response thereto.
摘要:
A micro-electromechanical system (MEMS) based current & magnetic field sensor includes a MEMS-based magnetic field sensing component having a capacitive magneto-MEMS component, a compensator and an output component for sensing magnetic fields and for providing, in response thereto, an indication of the current present in a respective conductor to be measured. In one embodiment, first and second mechanical sense components are electrically conductive and operate to sense a change in a capacitance between the mechanical sense components in response to a mechanical indicator from a magnetic-to-mechanical converter.
摘要:
According to some embodiments, a Microelectromechanical System (MEMS) sensor includes a sensing material on a spring element. The sensor may also include a detector adapted to determine a resonant frequency associated with the spring element, wherein the resonant frequency changes upon the exposure of the sensing material to an analyte.
摘要:
A micro-electro-mechanical system (MEMS) current sensor for sensing a magnetic field produced by an electrical current flowing in a conductor includes a first fixed element and a moving element. The moving element is spaced away from the first fixed element and is movable relative to the fixed element responsive to a magnetic field produced by an electrical current flowing in a conductor for providing a mechanical indication of a strength of the magnetic field. The sensor also includes a tunneling current generator for generating a tunneling current between the first fixed element and the moving element and a tunneling current monitor for monitoring a change in the tunneling current responsive to the mechanical indication to provide an indication of a value of the electrical current in the conductor.
摘要:
A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.
摘要:
A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.