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    Nonvolatile memory storage system
    6.
    发明授权
    Nonvolatile memory storage system 有权

    公开(公告)号：US10229749B2

    公开(公告)日：2019-03-12

    申请号：US15475670

    申请日：2017-03-31

    申请人： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Hong Rak Son ,  Dongsup Jin

    发明人： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Hong Rak Son ,  Dongsup Jin

    IPC分类号： G11C29/50 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

    摘要： A nonvolatile memory storage system includes a plurality of memory cells and a memory controller configured to transmit a read command to a nonvolatile memory device based on a plurality of read voltages. The nonvolatile memory device performs a first read operation on a first level among the N levels based on a first read voltage among the plurality of read voltages, counts the number of on-cells that respond to the first read voltage among the plurality of memory cells, and adjusts a level of a second read voltage to be used to perform a second read operation on the first level or a second level among the N levels among the plurality of read voltages according to a comparison result of the counted number of on-cells and the number of reference cells.

    Method of estimating read level for a memory device, memory controller therefor, and recording medium
    8.
    发明授权
    Method of estimating read level for a memory device, memory controller therefor, and recording medium 失效
    用于估计存储器件，其存储器控制器和记录介质的读取电平的方法

    公开(公告)号：US08516183B2

    公开(公告)日：2013-08-20

    申请号：US13114337

    申请日：2011-05-24

    申请人： Hee Seok Eun ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

    发明人： Hee Seok Eun ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

    IPC分类号： G06F12/00

    CPC分类号： G11C11/5642 ,  G06F12/0246 ,  G06F2212/7209 ,  G11C16/3404 ,  G11C16/349

    摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.

    摘要翻译： 一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及 在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

    METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM
    9.
    发明申请
    METHOD OF ESTIMATING READ LEVEL FOR A MEMORY DEVICE, MEMORY CONTROLLER THEREFOR, AND RECORDING MEDIUM 失效
    对存储器件的读取电平进行估计的方法，其存储器控制器和记录介质

    公开(公告)号：US20110289278A1

    公开(公告)日：2011-11-24

    申请号：US13114337

    申请日：2011-05-24

    申请人： Hee Seok EUN ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

    发明人： Hee Seok EUN ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

    IPC分类号： G06F12/08

    CPC分类号： G11C11/5642 ,  G06F12/0246 ,  G06F2212/7209 ,  G11C16/3404 ,  G11C16/349

    摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.

    摘要翻译： 一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及 在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

    NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES
    10.
    发明申请
    NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES 有权
    非易失性存储器件和操作非易失性存储器件的方法

    公开(公告)号：US20120257455A1

    公开(公告)日：2012-10-11

    申请号：US13211743

    申请日：2011-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    IPC分类号： G11C16/10

    CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454

    摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.

    摘要翻译： 操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压 响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。