Refrigerator for managing food by using RFID
    2.
    发明申请
    Refrigerator for managing food by using RFID 有权
    使用RFID管理食物的冰箱

    公开(公告)号:US20070016852A1

    公开(公告)日:2007-01-18

    申请号:US11440440

    申请日:2006-05-25

    IPC分类号: G06F17/00

    摘要: Refrigerator for managing food by using RFID including a plurality of storage portions divided in the refrigerator for storing food, RFID devices each having storage information of each kind of food stored in the storage portions, and controller for reading the storage information and setting up the storage portion which maintains a storage condition suitable to the storage information read thus, thereby permitting easy storage of food in a storage portion having the storage condition by using the RFID device.

    摘要翻译: 用于通过使用包含分配在冰箱中的多个存储部分来存储食物的RFID来管理食物的冰箱,每个具有存储在存储部分中的各种食物的存储信息的RFID设备,以及用于读取存储信息和设置存储器的控制器 维持适合于读取的存储信息的存储条件的部分,从而允许通过使用RFID设备容易地将食物存储在具有存储条件的存储部分中。

    Multi-input multi-frequency synthesizing apparatus and method for multi-band RF receiver
    3.
    发明申请
    Multi-input multi-frequency synthesizing apparatus and method for multi-band RF receiver 失效
    多频RF接收机的多输入多频合成装置及方法

    公开(公告)号:US20070140392A1

    公开(公告)日:2007-06-21

    申请号:US11439222

    申请日:2006-05-24

    IPC分类号: H04L7/00

    CPC分类号: H03B21/02 H03L7/23

    摘要: A multi-input multi-frequency synthesizing apparatus and method for a multi-band radio frequency (RF) receiver. The frequency synthesizing apparatus may generate an output from a greater number of high frequency signals by using one multi-input single side band (SSB) mixer. The multi-input SSB mixer may generate a signal whose frequency is an addition of frequencies of two signals selected from a signal selection control unit, or a difference of frequencies therebetween. According to a circuit configuration of the multi-input SSB mixer, the signal selection control unit may select more than two signals.

    摘要翻译: 一种用于多频带射频(RF)接收机的多输入多频合成装置和方法。 频率合成装置可以通过使用一个多输入单边带(SSB)混频器从更多数量的高频信号产生输出。 多输入SSB混频器可以产生频率是从信号选择控制单元选择的两个信号的频率的相加或其间的频率差的信号。 根据多输入SSB混频器的电路结构,信号选择控制单元可以选择两个以上的信号。

    Wide tunable polyphase filter with variable resistor and variable capacitor
    4.
    发明申请
    Wide tunable polyphase filter with variable resistor and variable capacitor 审中-公开
    宽可变多相滤波器,带可变电阻和可变电容

    公开(公告)号:US20070100927A1

    公开(公告)日:2007-05-03

    申请号:US11397777

    申请日:2006-04-05

    IPC分类号: G06G7/02

    摘要: Disclosed is a wideband polyphase filter using variable resistors and variable capacitors for correcting a phase and a frequency to be suitable for wideband communication. There is provided a wideband polyphase filter including: a variable resistor in which resistance varies; and a variable capacitor in which capacitance varies, wherein the variable resistor and the variable capacitor correct a wideband frequency and a phase, converts a predetermined differential input into a quadrature signal and outputs the converted quadrature signal. A wideband polyphase filter which varies resistance and capacitance to correct a phase and frequency, and also may obtain a wideband frequency range may be provided.

    摘要翻译: 公开了一种宽带多相滤波器,其使用可变电阻器和可变电容器来校正适合于宽带通信的相位和频率。 提供了一种宽带多相滤波器,包括:电阻变化的可变电阻器; 以及电容变化的可变电容器,其中可变电阻器和可变电容器校正宽带频率和相位,将预定差分输入转换为正交信号并输出​​转换的正交信号。 可以提供改变电阻和电容以校正相位和频率并且还可以获得宽带频率范围的宽带多相滤波器。

    III-nitride semiconductor light emitting device
    5.
    发明申请
    III-nitride semiconductor light emitting device 失效
    III族氮化物半导体发光器件

    公开(公告)号:US20070001179A1

    公开(公告)日:2007-01-04

    申请号:US10544328

    申请日:2005-06-28

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 H01L33/06

    摘要: The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SixCyNz(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x≧0, y≧0, x+y>0, z>0) material.

    摘要翻译: 本发明涉及一种III族氮化物半导体发光器件,其中单层或多层由Si x Si x N z N z (x> = 0,y> = 0,x + y> 0,z> 0)插入到有源层中或下面,并且涉及一种技术,其中Al(x)Ga(y)In xy)N(0 <= x <=1,0,0≤y≤1,0<= x + y <= 1)的六方结构和Si x x C y 根据Si = 0,y> = 0,x + y> 0,z> 0) (x> = 0,y> = 0,x + y> 0,z> 0)材料。

    Multi-frequency synthesizing apparatus and method for multi-band RF receiver
    7.
    发明申请
    Multi-frequency synthesizing apparatus and method for multi-band RF receiver 有权
    多频RF接收机的多频合成装置及方法

    公开(公告)号:US20070178869A1

    公开(公告)日:2007-08-02

    申请号:US11481964

    申请日:2006-07-07

    IPC分类号: H04B7/00

    CPC分类号: H04B1/0082 H03B21/02

    摘要: A frequency synthesizing apparatus and method for a multi-band radio frequency (RF) receiver is provided. The frequency synthesizing apparatus includes a simple circuit configuration with a single SSB mixer and thus, may synthesize six high frequency signals. Signals to be inputted into the SSB mixer include a first signal and a second signal. The first signal is generated based on a VCO and a PPF. Also, the second signal is selected from a plurality of frequency divided signals which are generated by dividing a signal generated in the VCO via a plurality of dividers.

    摘要翻译: 提供了一种用于多频带射频(RF)接收机的频率合成装置和方法。 频率合成装置包括具有单个SSB混频器的简单电路配置,因此可以合成六个高频信号。 要输入到SSB混频器的信号包括第一信号和第二信号。 基于VCO和PPF产生第一信号。 而且,第二信号是通过经由多个分频器划分在VCO中产生的信号而产生的多个分频信号中选择的。

    Method of manufacturing thin film capacitor and printed circuit board having thin film capacitor embedded therein
    8.
    发明申请
    Method of manufacturing thin film capacitor and printed circuit board having thin film capacitor embedded therein 审中-公开
    薄膜电容器的制造方法以及嵌入其中的薄膜电容器的印刷电路板

    公开(公告)号:US20070081297A1

    公开(公告)日:2007-04-12

    申请号:US11541676

    申请日:2006-10-03

    IPC分类号: H01G4/06

    摘要: A method of manufacturing a thin film capacitor includes steps of: performing recrystallization heat treatment on a metal foil; forming a dielectric layer on a top surface of the recrystallized metal foil; heat treating the metal foil and the dielectric layer; and forming an upper electrode on a top surface of the heat-treated dielectric layer. The recrystallization heat treatment prevents the oxidation of a metal foil, by which a dielectric layer can be heat treated at a high temperature, thereby improving electric properties of a thin film capacitor and the reliability of a product.

    摘要翻译: 制造薄膜电容器的方法包括以下步骤:对金属箔进行再结晶热处理; 在再结晶金属箔的顶表面上形成电介质层; 对金属箔和电介质层进行热处理; 以及在所述经热处理的介电层的顶表面上形成上电极。 再结晶热处理防止金属箔的氧化,通过该金属箔可以在高温下对介电层进行热处理,从而提高薄膜电容器的电性能和产品的可靠性。

    Embedded thin layer capacitor, layered structure, and fabrication method of the same
    9.
    发明申请
    Embedded thin layer capacitor, layered structure, and fabrication method of the same 审中-公开
    嵌入式薄层电容器,分层结构及其制造方法

    公开(公告)号:US20070004165A1

    公开(公告)日:2007-01-04

    申请号:US11319820

    申请日:2005-12-28

    IPC分类号: H01L21/20

    摘要: The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a first metal electrode layer formed on a polymer-based composite substrate, a dielectric layer, formed on the first metal electrode layer, and made of BiZnNb-based metal oxide with a dielectric constant of at least 15, and a second metal electrode layer formed on the dielectric layer. The BiZnNb-based amorphous metal oxide in this invention has a high dielectric constant without a thermal treatment for crystallization, useful for fabrication of a thin layer capacitor of a polymer-based layered structure such as a PCB.

    摘要翻译: 本发明涉及包括第一和第二金属电极层的薄层电容器和插入在金属层之间介电常数至少为15的BiZnNb基非晶态金属氧化物的电介质层和具有该介电层的层状结构。 层状结构包括形成在第一金属电极层上的由聚合物系复合基板形成的第一金属电极层,介电层,介电常数为15以上的BiZnNb系金属氧化物,第二金属电极层 形成在电介质层上的金属电极层。 本发明中的BiZnNb系非晶态金属氧化物具有高介电常数,而不需要进行结晶热处理,可用于制造基于聚合物的层状结构如PCB的薄层电容器。

    Magnesium based amorphous alloy having improved glass forming ability and ductility
    10.
    发明申请
    Magnesium based amorphous alloy having improved glass forming ability and ductility 有权
    具有改善的玻璃形成能力和延展性的镁基非晶态合金

    公开(公告)号:US20050279427A1

    公开(公告)日:2005-12-22

    申请号:US11151420

    申请日:2005-06-14

    IPC分类号: C22C45/00

    CPC分类号: C22C45/005

    摘要: Disclosed is a magnesium based amorphous alloy having a good glass forming ability and ductility. The Mg based amorphous alloy has a composition range of Mg100-x-yAxBy where x and y are respectively 2.5≦x≦30, 2.5≦y≦20 in atomic percent. Here, A includes at least one element selected from the group consisting of Cu, Ni, Zn, Al, Ag, and Pd, and B includes at least one element selected from the group consisting of Gd, Y, Ca, and Nd.

    摘要翻译: 公开了具有良好的玻璃形成能力和延展性的镁基非晶态合金。 Mg基非晶态合金的组成范围为Mg×100-xy×A×B×Y×Y,其中x和y分别为2.5 <= x < = 30,2.5 <= y <= 20原子%。 这里,A包括选自Cu,Ni,Zn,Al,Ag和Pd中的至少一种元素,B包括选自Gd,Y,Ca和Nd中的至少一种元素。