公开(公告)号：US20050170549A1

公开(公告)日：2005-08-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/331 ,  H01L31/109 ,  H01L31/11 ,  H01L21/00 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US07264987B2

公开(公告)日：2007-09-04

申请号：US11012699

申请日：2004-12-16

申请人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

发明人： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Eui Hong ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66318 ,  H01L31/109 ,  H01L31/1105

摘要： Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

摘要翻译： 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US07855094B2

公开(公告)日：2010-12-21

申请号：US12428575

申请日：2009-04-23

申请人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

摘要翻译： 一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。

公开(公告)号：US07759703B2

公开(公告)日：2010-07-20

申请号：US12143584

申请日：2008-06-20

申请人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

发明人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC分类号： H01L29/737

CPC分类号： H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

摘要： A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

摘要翻译： 提供了与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置及其制造方法。 根据光检测器阵列器件，在InP衬底上同时形成用于选择和输出激光雷达图像信号的光电二极管和控制装置，从而可以简化制造工艺并大大提高产量。 此外，在InP衬底上同时形成光电二极管和控制装置之后，通过使用聚酰亚胺将光电二极管和控制装置电分离。 因此，埋入光电二极管的PN结表面，从而能够减小表面泄漏电流，提高电气可靠性。 此外，可以简化控制装置的结构，从而可以提高图像信号接收特性。

公开(公告)号：US20090146197A1

公开(公告)日：2009-06-11

申请号：US12143584

申请日：2008-06-20

申请人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

发明人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

摘要： A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

摘要翻译： 提供了与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置及其制造方法。 根据光检测器阵列器件，在InP衬底上同时形成用于选择和输出激光雷达图像信号的光电二极管和控制装置，从而可以简化制造工艺并大大提高产量。 此外，在InP衬底上同时形成光电二极管和控制装置之后，通过使用聚酰亚胺将光电二极管和控制装置电分离。 因此，埋入光电二极管的PN结表面，从而能够减小表面泄漏电流，提高电气可靠性。 此外，可以简化控制装置的结构，从而可以提高图像信号接收特性。

公开(公告)号：US20090140291A1

公开(公告)日：2009-06-04

申请号：US11635170

申请日：2006-12-07

申请人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC分类号： H01L31/0304 ,  H01L21/329

CPC分类号： H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

公开(公告)号：US07068886B2

公开(公告)日：2006-06-27

申请号：US11248467

申请日：2005-10-12

申请人： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

发明人： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

IPC分类号： G02B6/34 ,  H04J14/02 ,  H01S3/00

CPC分类号： H01S3/10092 ,  G02B6/02085 ,  G02B6/02138 ,  G02B6/02142 ,  G02B6/2932 ,  G02F2/002 ,  H01S3/005 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/4006 ,  H03B28/00

摘要： Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

摘要翻译： 提供了一种用于产生无线通信中所需的高频信号的毫米波振荡器。 毫米波振荡器使用重写的光纤布拉格光栅和光检测器，使得产生具有一定相位关系的两个波长以产生具有高频率的毫米波段的信号，由此容易获得光源而不进行信号处理 锁相。

公开(公告)号：US20060083464A1

公开(公告)日：2006-04-20

申请号：US11248467

申请日：2005-10-12

申请人： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

发明人： Myoung Sook Oh ,  Ho Young Kim ,  Eun Soo Nam

IPC分类号： G02B6/34

CPC分类号： H01S3/10092 ,  G02B6/02085 ,  G02B6/02138 ,  G02B6/02142 ,  G02B6/2932 ,  G02F2/002 ,  H01S3/005 ,  H01S3/2383 ,  H01S3/2391 ,  H01S5/4006 ,  H03B28/00

摘要： Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

摘要翻译： 提供了一种用于产生无线通信中所需的高频信号的毫米波振荡器。 毫米波振荡器使用重写的光纤布拉格光栅和光检测器，使得产生具有一定相位关系的两个波长以产生具有高频率的毫米波段的信号，由此容易获得光源而不进行信号处理 锁相。

公开(公告)号：US20090239328A1

公开(公告)日：2009-09-24

申请号：US12428575

申请日：2009-04-23

申请人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

发明人： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC分类号： H01L21/77 ,  H01L21/329 ,  H01L31/0304

CPC分类号： H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

摘要： A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

摘要翻译： 一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。

公开(公告)号：US07892880B2

公开(公告)日：2011-02-22

申请号：US12724667

申请日：2010-03-16

申请人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

发明人： Eun Soo Nam ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

摘要： A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.

摘要翻译： 一种制造与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置的方法。 在InP衬底上同时形成用于选择和输出激光雷达图像信号的检测器阵列器件，光电二极管和控制器件。 此外，在InP衬底上同时形成光电二极管和控制装置之后，使用聚酰胺将光电二极管和控制装置彼此电分离，由此埋入光电二极管的PN结表面以减小表面泄漏电流， 提高电气可靠性，可以简化控制装置的结构，提高图像信号接收特性。