公开(公告)号：US20160315253A1

公开(公告)日：2016-10-27

申请号：US15147682

申请日：2016-05-05

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel ,  Chaitanya Mudivarthi ,  Nicholas Rizzo ,  Jason Allen Janesky

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.

公开(公告)号：US20160104519A1

公开(公告)日：2016-04-14

申请号：US14879061

申请日：2015-10-08

Applicant: Everspin Technologies, Inc.

Inventor： Jon Slaughter ,  Jason Allen Janesky

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0097 ,  G11C17/16 ,  G11C17/18 ,  G11C29/006 ,  G11C29/06

Abstract: Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

Abstract translation: 提出了使用自旋扭矩磁存储单元作为抗熔丝来存储和检索数据的技术和电路。 包括电路以允许将更大幅度的电压和电流施加到磁存储器单元以有意地分解包括磁性隧道结的介电层。 使用具有与完整电介质层的正电阻磁隧道结的磁存储单元来存储第一数据状态，并且使用具有与分解电介质层的磁性隧道结的磁存储单元来存储第二数据状态。 可以在晶片探测期间以这种方式存储数据，然后在设备被包括在系统中之后，随后直接读出或复制到设备上的其他磁性或非磁性存储器中以用于操作。

公开(公告)号：US09455015B2

公开(公告)日：2016-09-27

申请号：US14879061

申请日：2015-10-08

Applicant: Everspin Technologies, Inc.

Inventor： Jon Slaughter ,  Jason Allen Janesky

IPC: G11C11/00 ,  G11C11/16 ,  G11C13/00

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0097 ,  G11C17/16 ,  G11C17/18 ,  G11C29/006 ,  G11C29/06

Abstract: Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

Abstract translation: 提出了使用自旋扭矩磁存储单元作为抗熔丝来存储和检索数据的技术和电路。 包括电路以允许将更大幅度的电压和电流施加到磁存储器单元以有意地分解包括磁性隧道结的介电层。 使用具有与完整电介质层的正电阻磁隧道结的磁存储单元来存储第一数据状态，并且使用具有与分解电介质层的磁性隧道结的磁存储单元来存储第二数据状态。 可以在晶片探测期间以这种方式存储数据，然后在设备被包括在系统中之后，随后直接读出或复制到设备上的其他磁性或非磁性存储器中以用于操作。

公开(公告)号：US20150357560A1

公开(公告)日：2015-12-10

申请号：US14298085

申请日：2014-06-06

Applicant: Everspin Technologies, Inc.

Inventor： Chaitanya Mudivarthi ,  Jason Allen Janesky ,  Jijun Sun ,  Frederick Bennett Mancoff ,  Sanjeev Aggarwal

IPC: H01L43/12

CPC classification number: H01J43/12 ,  H01L43/12

Abstract: The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

Abstract translation: 通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。 通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。 这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

公开(公告)号：US09595665B2

公开(公告)日：2017-03-14

申请号：US15147682

申请日：2016-05-05

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel ,  Chaitanya Mudivarthi ,  Nicholas Rizzo ,  Jason Allen Janesky

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.

Abstract translation: 在形成用于磁阻器件的顶部电极时，使用非反应性剥离工艺剥离用于图案化电极的光致抗蚀剂。 这种非反应性汽提方法使用水蒸汽或一些其它非氧化气体，其也钝化了磁阻装置的暴露部分。 在这种磁阻器件中，包括非反应性间隔层，其有助于防止磁阻器件中的层之间的扩散，其中间隔层的非反应特性防止可能干扰磁阻的下部的精确形成的侧壁粗糙度 设备。

公开(公告)号：US09281168B2

公开(公告)日：2016-03-08

申请号：US14298085

申请日：2014-06-06

Applicant: Everspin Technologies, Inc.

Inventor： Chaitanya Mudivarthi ,  Jason Allen Janesky ,  Jijun Sun ,  Frederick Bennett Mancoff ,  Sanjeev Aggarwal

IPC: H01L27/11 ,  H01L27/22 ,  H01J43/12

CPC classification number: H01J43/12 ,  H01L43/12

Abstract: The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

Abstract translation: 通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。 通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。 这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

公开(公告)号：US20150236248A1

公开(公告)日：2015-08-20

申请号：US14296181

申请日：2014-06-04

Applicant: Everspin Technologies, Inc.

Inventor： Sarin A. Deshpande ,  Sanjeev Aggarwal ,  Kerry Joseph Nagel ,  Nicholas Rizzo ,  Jason Allen Janesky

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: A two-step etching process is used to form the top electrode for a magnetoresistive device. The level of isotropy is different for each of the two etching steps, thereby providing advantages associated with isotropic etching as well as more anisotropic etching. The level of isotropy is controlled by varying power and pressure during plasma etching operations.

Abstract translation: 使用两步蚀刻工艺来形成用于磁阻器件的顶部电极。 各向同性的水平对于两个蚀刻步骤中的每一个都是不同的，从而提供与各向同性蚀刻相关的优点以及更多的各向异性蚀刻。 在等离子体蚀刻操作期间通过变化的功率和压力来控制各向同性的水平。