Circuit for monitoring metal degradation on integrated circuit

    公开(公告)号:US09733302B2

    公开(公告)日:2017-08-15

    申请号:US14846813

    申请日:2015-09-06

    IPC分类号: G01R31/3187 G01R31/28

    摘要: An integrated circuit (IC) having a heat-generating element, such as a power MOSFET, a current-carrying conductor coupled to the heat-generating element, a sense conductor adjacent the current-carrying conductor, and a failure-detection circuit coupled to the sense conductor. When thermal cycling of the IC causes the resistance of the sense conductor to become greater than a temperature-dependent threshold value, the failure-detection circuit generates a signal indicating that the integrated circuit will soon fail. The resistance of the sense conductor is determined by injecting a current into the sense conductor to generate a voltage. The temperature-dependent threshold value is a voltage generated by injecting a current into a reference conductor disposed away from the current-carrying and sense conductors. A voltage comparator compares the two voltages to generate the output. Alternatively, the failure-detection circuit includes a processor that calculates the temperature-dependent threshold value from a temperature measurement taken on the integrated circuit.

    CIRCUIT FOR MONITORING METAL DEGRADATION ON INTEGRATED CIRCUIT
    2.
    发明申请
    CIRCUIT FOR MONITORING METAL DEGRADATION ON INTEGRATED CIRCUIT 有权
    用于监测集成电路金属降解的电路

    公开(公告)号:US20160216318A1

    公开(公告)日:2016-07-28

    申请号:US14846813

    申请日:2015-09-06

    IPC分类号: G01R31/28

    摘要: An integrated circuit (IC) having a heat-generating element, such as a power MOSFET, a current-carrying conductor coupled to the heat-generating element, a sense conductor adjacent the current-carrying conductor, and a failure-detection circuit coupled to the sense conductor. When thermal cycling of the IC causes the resistance of the sense conductor to become greater than a temperature-dependent threshold value, the failure-detection circuit generates a signal indicating that the integrated circuit will soon fail. The resistance of the sense conductor is determined by injecting a current into the sense conductor to generate a voltage. The temperature-dependent threshold value is a voltage generated by injecting a current into a reference conductor disposed away from the current-carrying and sense conductors. A voltage comparator compares the two voltages to generate the output. Alternatively, the failure-detection circuit includes a processor that calculates the temperature-dependent threshold value from a temperature measurement taken on the integrated circuit.

    摘要翻译: 具有诸如功率MOSFET的发热元件,耦合到发热元件的载流导体,与载流导体相邻的感测导体的集成电路(IC)以及耦合到载流导体的故障检测电路 感应导体。 当IC的热循环使得感测导体的电阻变得大于温度相关阈值时,故障检测电路产生指示集成电路将很快失败的信号。 感测导体的电阻通过将电流注入到感测导体中以产生电压来确定。 温度相关阈值是通过将电流注入远离载流和感测导体布置的参考导体而产生的电压。 电压比较器比较两个电压以产生输出。 或者,故障检测电路包括处理器,其根据在集成电路上进行的温度测量来计算温度相关阈值。