公开(公告)号：US20170018884A1

公开(公告)日：2017-01-19

申请号：US15203755

申请日：2016-07-06

申请人： FUJI ELECTRIC CO., LTD.

发明人： Yuji HAYASE ,  Katsumi TANIGUCHI

IPC分类号： H01R13/66 ,  H01R43/18 ,  H01R13/50 ,  H01R12/57 ,  H01R25/16

CPC分类号： H01R43/18 ,  H01R9/2458 ,  H01R25/162 ,  H01R43/24 ,  H05K7/1432

摘要： To realize an insulating busbar that has both low inductance and high withstand voltage, provided is an insulating busbar that connects to a module on which is mounted a semiconductor chip, including a plurality of circuit conductors; a plurality of connection terminals that respectively electrically connect the circuit conductors to the module; and an insulating resin portion that is formed integrally between each of the circuit conductors and at least a portion of a region around each connection terminal and does not have any gaps between the circuit semiconductors.

摘要翻译： 为了实现具有低电感和高耐受电压的绝缘母线，提供了一种绝缘母线，其连接到其上安装有包括多个电路导体的半导体芯片的模块; 分别将所述电路导体电连接到所述模块的多个连接端子; 以及绝缘树脂部分，其一体地形成在每个电路导体和每个连接端子周围的区域的至少一部分之间，并且在电路半导体之间不具有任何间隙。

公开(公告)号：US20150213825A1

公开(公告)日：2015-07-30

申请号：US14680007

申请日：2015-04-06

申请人： FUJI ELECTRIC CO., LTD.

发明人： Narumi SATO ,  Akiyasu KUMAGAI ,  Tomonori KATANO ,  Katsumi TANIGUCHI

IPC分类号： G11B5/72 ,  G11B5/84

CPC分类号： G11B5/72 ,  G11B5/8408

摘要： The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.

摘要翻译： 用于热辅助记录系统的磁记录介质在非磁性基板上具有磁记录层，在磁记录层顶部具有保护层。 保护层包括在磁记录层顶部的第一下保护层，第一下保护层上的第一上保护层和第一上保护层上的第二保护层。 第一下保护层主要由选自Si，Al和Cu的元素组成，第一上保护层是由第一下保护层的材料的氧化物构成的层。

公开(公告)号：US20230119240A1

公开(公告)日：2023-04-20

申请号：US17894645

申请日：2022-08-24

申请人： FUJI ELECTRIC CO., LTD.

发明人： Katsumi TANIGUCHI ,  Yoshinari IKEDA ,  Ryoichi KATO ,  Yuma MURATA ,  Akito NAKAGOME

IPC分类号： H01L23/047 ,  H01L25/07 ,  H01L23/373 ,  H01L21/48

摘要： A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

公开(公告)号：US20210257269A1

公开(公告)日：2021-08-19

申请号：US17156787

申请日：2021-01-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Katsumi TANIGUCHI

IPC分类号： H01L23/053 ,  H01L23/14 ,  H01L23/498 ,  H01L23/31

摘要： A semiconductor device having a base circuit board, a case surrounding the base circuit board to demarcate, in a plan view, an opening area in which the base circuit board is disposed, and a sealing member that seals the base circuit board disposed in the case. The base circuit board includes a metal base substrate, a resin layer formed on the metal base substrate, and a circuit pattern formed on the resin layer. The case has an inner wall surface that faces an outer peripheral side surface of the base circuit board, and that includes a first inner wall portion which is in surface contact with an outer peripheral side surface of the metal base substrate, and a second inner wall portion that is separate from the outer peripheral side surface of the base circuit board, to thereby have a first gap therebetween filled with the sealing member.

公开(公告)号：US20200091140A1

公开(公告)日：2020-03-19

申请号：US16566579

申请日：2019-09-10

申请人： Fuji Electric Co., Ltd.

发明人： Masashi HOYA ,  Katsumi TANIGUCHI ,  Naoyuki KANAI

IPC分类号： H01L27/06 ,  H01L23/498 ,  H01L23/522 ,  H01L23/31

摘要： A semiconductor unit includes: a plurality of transistor chips arranged in a plurality of parallel rows, each transistor chip respectively having a first main electrode on one surface and a second main electrode on another surface; a first conductor layer electrically connected to the first main electrodes of the transistor chips, both corner portions on one end of the first conductor layer being drawn out in a direction in which the rows of transistor chips run; a second conductor layer arranged between the both corner portions of the first conductor layer; and a wiring substrate that is arranged on a side of the second main electrodes of the plurality of transistor chips and includes a wiring layer electrically connected to the second main electrodes of the plurality of transistor chips and to the second conductor layer.

公开(公告)号：US20180301422A1

公开(公告)日：2018-10-18

申请号：US15903570

申请日：2018-02-23

申请人： FUJI ELECTRIC CO., LTD.

发明人： Kohei YAMAUCHI ,  Hiromichi GOHARA ,  Ryoichi KATO ,  Yoshinari IKEDA ,  Katsumi TANIGUCHI

IPC分类号： H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/367 ,  H01L23/46

摘要： A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.

公开(公告)号：US20140111956A1

公开(公告)日：2014-04-24

申请号：US14022367

申请日：2013-09-10

申请人： FUJI ELECTRIC CO., LTD.

发明人： Katsumi TANIGUCHI

IPC分类号： H01L23/00 ,  B23K35/02

CPC分类号： B23K35/0233 ,  B23K35/02 ,  C22F1/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/29076 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/3201 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/73104 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83007 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83097 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A joining method using a metal foam, a method of manufacturing a semiconductor device by using the joining method, and a semiconductor device produced by the manufacturing method are disclosed. A metal foam body is sandwiched between members to be joined, which are then brought into contact with each other and subjected to heat treatment. In this heat treatment, films of low-melting-point metal, such as Sn films covering the members to be joined, are melted. An alloy layer—an intermetallic compound—is formed by bringing about solid-liquid diffusion of Cu of a skeleton of open cells of the metal foam body in the molten Sn. At this stage, a Cu skeleton is left in the metal foam body. Highly thermally resistant and highly reliable joining can be realized by joining the members to be joined together by using this alloy layer.

摘要翻译： 公开了使用金属泡沫的接合方法，使用接合方法制造半导体器件的方法以及通过该制造方法制造的半导体器件。 将金属泡沫体夹在待接合的构件之间，然后彼此接触并进行热处理。 在这种热处理中，熔融了低熔点金属的膜，例如覆盖待接合部件的Sn膜。 通过使熔融Sn中的金属泡沫体的开孔的骨架的Cu的固体 - 液体扩散而形成合金层 - 金属间化合物。 在这个阶段，金属泡沫体中留下一个铜骨架。 通过使用该合金层将要接合的构件接合，可以实现高耐热性和高可靠性的接合。

公开(公告)号：US20170047923A1

公开(公告)日：2017-02-16

申请号：US15200847

申请日：2016-07-01

申请人： FUJI ELECTRIC CO., LTD.

发明人： Tetsuya INABA ,  Yoshinari IKEDA ,  Katsumi TANIGUCHI ,  Daisuke KIMIJIMA

IPC分类号： H03K17/687 ,  H01L23/373 ,  H01L23/528 ,  H01L25/07 ,  H01L29/861 ,  H01L29/16 ,  H01L23/367

CPC分类号： H03K17/687 ,  H01L23/3675 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4006 ,  H01L23/473 ,  H01L23/49833 ,  H01L23/528 ,  H01L24/01 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L25/072 ,  H01L25/074 ,  H01L25/18 ,  H01L29/1608 ,  H01L29/861 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2225/06589 ,  H01L2924/10272 ,  H01L2924/1203 ,  H01L2924/13091 ,  H01L2924/014 ,  H01L2924/00014

摘要： In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.

摘要翻译： 在半导体模块中，第二半导体芯片（例如二极管）比第一半导体芯片（MOSFET）更靠近叠层基板。 当提供给第一半导体芯片（MOSFET）的栅电极的控制信号关闭时，由源极端子到漏极板的电压产生的电流主要流过第二半导体芯片。

公开(公告)号：US20150004328A1

公开(公告)日：2015-01-01

申请号：US14487079

申请日：2014-09-15

申请人： FUJI ELECTRIC CO., LTD.

发明人： Narumi SATO ,  Akiyasu KUMAGAI ,  Tomonori KATANO ,  Katsumi TANIGUCHI ,  Hiromi ONO

IPC分类号： C23C16/56

CPC分类号： C23C16/56 ,  C23C16/02 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/26 ,  C23C16/36 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408

摘要： A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbonvery easy to use VVery eas-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25° or less.

摘要翻译： 一种在基板上包括磁性层，下保护层，上保护层和润滑层的磁记录介质的制造方法，其中下保护层和上保护层的总膜厚为2.5 nm以下，包括：1）沉积下保护层; 2）对下保护层进行氧等离子体处理; 3）沉积上保护层; 和4）在上保护层上进行氮等离子体处理。 优选的是，下保护层和上保护层由易于使用的易燃易燃材料形成，进一步优选的是，下保护层和上保护层由金刚石碳形成 。 此外，下保护层相对于大气中的水的接触角优选为25°以下。

公开(公告)号：US20230124778A1

公开(公告)日：2023-04-20

申请号：US17954166

申请日：2022-09-27

申请人： FUJI ELECTRIC CO., LTD.

发明人： Akito NAKAGOME ,  Katsumi TANIGUCHI ,  Ryoichi KATO ,  Yuma MURATA

IPC分类号： H01L23/498 ,  H01L23/64 ,  H01L21/48 ,  H01L23/482

摘要： A semiconductor module (semiconductor device) includes a case that has a side wall to form a frame, the side wall having a concave portion, a multi-layer structure in which a first terminal, an insulating sheet, and a second terminal are stacked in that order and which is disposed on the concave portion, and a beam member that is attached to the concave portion of the case to fix the multi-layer structure disposed on the concave portion.