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公开(公告)号：US20180219068A1
公开(公告)日：2018-08-02
申请号：US15853971
申请日：2017-12-26
发明人： Yasunori AGATA
IPC分类号： H01L29/10 , H01L29/06 , H01L29/66 , H01L29/73 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0692 , H01L29/402 , H01L29/66325 , H01L29/7304 , H01L29/7397 , H01L29/7811 , H01L29/7823
摘要： A semiconductor device including a semiconductor substrate having an edge termination portion and an active portion is provided. The edge termination portion includes an outer edge region provided on an end portion of a front surface of the semiconductor substrate and within a predetermined depth range. The active portion includes a well region provided on an inner side relative to the outer edge region of the front surface of the semiconductor substrate and within a predetermined depth range. The semiconductor device further includes an insulating film provided on the front surface of the semiconductor substrate and at least between the outer edge region and the well region and having a taper portion, and a resistive film provided on the insulating film and electrically connected to the outer edge region and the well region. A taper angle of the taper portion of the insulating film is 60 degrees or less.
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公开(公告)号：US20220319852A1
公开(公告)日：2022-10-06
申请号：US17847170
申请日：2022-06-23
发明人： Yasunori AGATA , Takahiro TAMURA , Toru AJIKI
IPC分类号： H01L21/22 , H01L21/265 , H01L27/06 , H01L29/32 , H01L29/739 , H01L29/861 , H01L29/36
摘要： A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.
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公开(公告)号：US20210104407A1
公开(公告)日：2021-04-08
申请号：US17106187
申请日：2020-11-30
IPC分类号： H01L21/265 , H01L27/06 , H01L29/739 , H01L29/861
摘要： There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.
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公开(公告)号：US20210050215A1
公开(公告)日：2021-02-18
申请号：US17079545
申请日：2020-10-26
发明人： Yasunori AGATA , Takahiro TAMURA , Toru AJIKI
IPC分类号： H01L21/22 , H01L27/06 , H01L29/739 , H01L29/861 , H01L29/32 , H01L21/265
摘要： A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.
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公开(公告)号：US20220392815A1
公开(公告)日：2022-12-08
申请号：US17890261
申请日：2022-08-17
IPC分类号： H01L21/66
摘要： There is provided a semiconductor device including a semiconductor substrate, the semiconductor device including: a sensing portion that is provided on the semiconductor substrate and that is configured to detect predetermined physical information; a sensing pad portion that is provided above an upper surface of the semiconductor substrate and that is connected to the sensing portion; a gate runner which is provided above the upper surface of the semiconductor substrate and to which a gate potential is applied; and one or more separated conductive portions in which each separated conductive portion is provided between the sensing pad portion and the semiconductor substrate and that is separated from the gate runner.
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公开(公告)号：US20220149191A1
公开(公告)日：2022-05-12
申请号：US17646136
申请日：2021-12-27
发明人： Tohru SHIRAKAWA , Daisuke OZAKI , Yasunori AGATA
IPC分类号： H01L29/739 , H01L29/08 , H01L29/861 , H01L29/66 , H01L29/06
摘要： Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. Both the transistor portion and the diode portion include a base region of a second conductivity type on a front surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the front surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.
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公开(公告)号：US20220013368A1
公开(公告)日：2022-01-13
申请号：US17486977
申请日：2021-09-28
发明人： Yasunori AGATA , Takashi YOSHIMURA , Hiroshi TAKISHITA , Misaki UCHIDA , Michio NEMOTO , Toru AJIKI , Yuichi ONOZAWA
IPC分类号： H01L21/322 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/861 , H01L29/739
摘要： Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.
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公开(公告)号：US20210082702A1
公开(公告)日：2021-03-18
申请号：US17033925
申请日：2020-09-28
发明人： Yasunori AGATA , Takashi YOSHIMURA , Hiroshi TAKISHITA , Misaki MEGURO , Naoko KODAMA , Yoshihiro IKURA , Seiji NOGUCHI , Yuichi HARADA , Yosuke SAKURAI
IPC分类号： H01L21/22 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/739 , H01L29/861 , H01L21/265 , H01L21/268 , H01L29/66
摘要： A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.
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公开(公告)号：US20220277959A1
公开(公告)日：2022-09-01
申请号：US17748006
申请日：2022-05-18
发明人： Yasunori AGATA , Takashi YOSHIMURA , Hiroshi TAKISHITA , Misaki MEGURO , Naoko KODAMA , Yoshihiro IKURA , Seiji NOGUCHI , Yuichi HARADA , Yosuke SAKURAI
IPC分类号： H01L21/22 , H01L21/268 , H01L21/265 , H01L27/06 , H01L29/06 , H01L29/861 , H01L29/32 , H01L29/40 , H01L29/66 , H01L29/739 , H01L29/10
摘要： A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
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公开(公告)号：US20220123108A1
公开(公告)日：2022-04-21
申请号：US17645996
申请日：2021-12-26
发明人： Daisuke OZAKI , Tohru SHIRAKAWA , Yasunori AGATA
摘要： Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. The diode portion includes a lifetime control region including a lifetime killer. Both the transistor portion and the diode portion include a base region of a second conductivity type on a surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.
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