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    METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND METHOD FOR POSITIONING CUTTING MEMBER
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND METHOD FOR POSITIONING CUTTING MEMBER 有权
    制造半导体芯片的方法和定位切割部件的方法

    公开(公告)号：US20160172203A1

    公开(公告)日：2016-06-16

    申请号：US14875769

    申请日：2015-10-06

    Applicant: FUJI XEROX CO., LTD.

    Inventor： Kenichi ONO ,  Michiaki MURATA ,  Tsutomu OTSUKA

    IPC: H01L21/304 ,  H01L21/3065 ,  H01L21/268 ,  H01L21/78

    CPC classification number: H01L21/3043 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is a method for manufacturing a semiconductor chip including forming a groove on a front surface side along a cut area of a substrate, and a concave portion deeper than the groove on the front surface side as a positioning mark for a cutting member that performs cutting from a back surface of the substrate along the groove on the front surface side, thinning the substrate so as to reach the concave portion and not reach the groove on the front surface side, in the back surface of the substrate, positioning the cutting member from the back surface of the substrate by using the concave portion exposed on the back surface of the substrate as the positioning mark, and performing cutting from the back surface side of the substrate toward the groove on the front surface side of the substrate by using the positioned cutting member.

    Abstract translation: 本发明提供一种半导体芯片的制造方法，该半导体芯片包括沿着基板的切割区域在前表面侧形成凹槽，以及比前表面侧的凹槽更深的凹部作为进行切割的切割构件的定位标记 从基板的背面沿着前表面侧的凹槽，使基板变薄，从而在基板的背面到达凹部而不到达表面侧的凹槽，将切割构件从 通过使用暴露在基板的背面上的凹部作为定位标记，并且从基板的背面侧朝向基板的前表面侧的凹槽进行切割，从而使基板的背面通过定位 切割构件。

    METHOD FOR PRODUCING SEMICONDUCTOR PIECE, CIRCUIT BOARD AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR PIECE, AND METHOD FOR DESIGNING ETCHING CONDITION
    6.
    发明申请
    METHOD FOR PRODUCING SEMICONDUCTOR PIECE, CIRCUIT BOARD AND ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR PIECE, AND METHOD FOR DESIGNING ETCHING CONDITION 有权
    用于生产半导体器件的方法，电路板和包括半导体器件的电子器件，以及用于设计蚀刻条件的方法

    公开(公告)号：US20160071733A1

    公开(公告)日：2016-03-10

    申请号：US14820038

    申请日：2015-08-06

    Applicant: FUJI XEROX CO., LTD.

    Inventor： Kenichi ONO ,  Hideyuki IKOMA ,  Shogo KOMAGATA ,  Michiaki MURATA ,  Tsutomu OTSUKA

    IPC: H01L21/3065 ,  H01L29/06 ,  H01L21/683 ,  H01L21/78

    CPC classification number: H01L21/3065 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68381

    Abstract: A method for producing a semiconductor piece includes forming a first groove portion of a front-surface-side groove by anisotropic dry etching from a front surface of a substrate, forming a second groove portion of the front-surface-side groove, the second groove portion being located below and in communication with the first groove portion and having a width wider than a width of the first groove portion, and thinning the substrate from a back surface of the substrate up to the second groove portion. The second groove portion is formed by changing an etching condition of the anisotropic dry etching during the formation of the front-surface-side groove so that the width of the second groove portion is wider than the width of the first groove portion.

    Abstract translation: 一种半导体器件的制造方法包括：从基板的前表面通过各向异性干蚀刻形成前面侧槽的第一槽部，形成前面侧槽的第二槽部，第二槽 部分位于第一凹槽部分的下方并与第一凹槽部分连通并且具有比第一凹槽部分的宽度宽的宽度，并且将基底从基底的后表面减薄到第二凹槽部分。 通过在形成前表面侧槽期间改变各向异性干蚀刻的蚀刻条件使得第二槽部的宽度比第一槽部的宽度宽，形成第二槽部。

    LIGHT EMITTING DEVICE AND RENDERING DEVICE
    7.
    发明申请
    LIGHT EMITTING DEVICE AND RENDERING DEVICE 有权

    公开(公告)号：US20210302864A1

    公开(公告)日：2021-09-30

    申请号：US17077195

    申请日：2020-10-22

    Applicant: FUJI XEROX CO., LTD.

    Inventor： Yosuke KASUYA ,  Tsutomu OTSUKA

    IPC: G03G15/04 ,  B41J2/45

    Abstract: A light emitting device, includes: a base plate extending in a first direction; multiple light emitting units arranged on a surface of the base plate while being shifted from each other in the first direction, and each including a support body extending in the first direction and multiple light sources supported on the support body while being arranged in the first direction; and a flow path disposed over the surface of the base plate to surround at least part of the light emitting units and allowing air to flow therethrough in the first direction.

    METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS 审中-公开

    公开(公告)号：US20160276525A1

    公开(公告)日：2016-09-22

    申请号：US15171463

    申请日：2016-06-02

    Applicant: FUJI XEROX CO., LTD.

    Inventor： Takeshi MINAMIRU ,  Michiaki MURATA ,  Kenji YAMAZAKI ,  Tsutomu OTSUKA

    IPC: H01L33/00 ,  H01L21/78 ,  H01S5/02

    CPC classification number: H01L33/0095 ,  B28D5/022 ,  B28D5/029 ,  H01L21/78 ,  H01S5/0202

    Abstract: A method of manufacturing semiconductor chips includes: forming grooves on a front face side of a substrate; and forming grooves on a back face side of the substrate as defined herein, and in manufacturing conditions in which a variation range of a top section of the cutting member having a tapered tip end shape with no top face in the groove width direction changes from a range included in the groove on the front face side to a range away from the groove on the front face side as wear of the cutting member advances, the use of the cutting member is stopped before the variation range changes from the range included in the groove on the front face side to the range away from the groove on the front face side.

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