公开(公告)号：US12150386B2

公开(公告)日：2024-11-19

申请号：US17820056

申请日：2022-08-16

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H10N50/01 ,  C23F1/30 ,  C23F1/40 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L27/105 ,  H10N50/10

Abstract: A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

公开(公告)号：US20230420266A1

公开(公告)日：2023-12-28

申请号：US18463754

申请日：2023-09-08

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi Mizutani ,  Tomonori Takahashi

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be treated using a composition for treating a semiconductor. The composition for treating a semiconductor according to the present invention is a composition for treating a semiconductor including a quaternary ammonium salt having a hydroxyl group, a polar organic solvent, at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof, and water, in which the mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.1.

公开(公告)号：US09726978B2

公开(公告)日：2017-08-08

申请号：US14717437

申请日：2015-05-20

Applicant: FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Kazutaka Takahashi ,  Atsushi Mizutani ,  Hiroyuki Seki ,  Hideo Fushimi ,  Tomoo Kato

IPC: G03F7/42 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  C09K13/00 ,  C09K13/06 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

公开(公告)号：US09159572B2

公开(公告)日：2015-10-13

申请号：US14316327

申请日：2014-06-26

Applicant: FUJIFILM Corporation

Inventor： Masashi Enokido ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/306 ,  H01L21/308 ,  H01L49/02 ,  H01L21/02 ,  H01L21/3213 ,  H01L27/108

CPC classification number: H01L21/30608 ,  H01L21/02068 ,  H01L21/3081 ,  H01L21/32134 ,  H01L27/10852 ,  H01L28/92

Abstract: A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

Abstract translation: 一种制造半导体衬底产品的方法，该方法包括：制备含有7质量％以上且25质量％以下的季铵烷基氢氧化铵的水溶液的工序; 制备具有包括多晶硅膜或非晶硅膜的硅膜的半导体衬底的步骤; 以及在80℃以上加热水溶液的步骤，将所得水溶液施加到半导体衬底上以蚀刻至少一部分硅膜。

公开(公告)号：US08709277B2

公开(公告)日：2014-04-29

申请号：US13827861

申请日：2013-03-14

Applicant: Fujifilm Electronic Materials U.S.A., Inc. ,  Fujifilm Corporation

Inventor： Kazutaka Takahashi ,  Atsushi Mizutani ,  Tomonori Takahashi

IPC: C09K13/00

CPC classification number: C23F1/28 ,  C23F1/20 ,  C23F1/26 ,  C23F1/30 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/823871

Abstract: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.

Abstract translation: 本公开涉及含有约60％至约95％的至少一种磺酸的蚀刻组合物; 约0.005％至约0.04％的氯化物阴离子; 约0.03％至约0.27％的溴离子; 约0.1％至约20％的硝酸盐或亚硝酰离子; 和约3％至约37％的水。

公开(公告)号：US20240228876A1

公开(公告)日：2024-07-11

申请号：US18603578

申请日：2024-03-13

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi Mizutani ,  Tomonori Takahashi

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30604

Abstract: An object of the present invention is to provide a treatment liquid for producing a semiconductor, which is capable of selectively removing Si in a case of being applied to an object to be treated containing SiGe and Si. The treatment liquid for manufacturing a semiconductor according to the present invention includes: a nitrogen-containing polymer; a quaternary ammonium hydroxide; an organic solvent having an SP value of 25 MPa1/2 or more; and water. Polyalkyleneimine is excluded from the nitrogen-containing polymer.

公开(公告)号：US12012658B2

公开(公告)日：2024-06-18

申请号：US17565419

申请日：2021-12-29

Applicant: FUJIFILM Corporation

Inventor： Atsushi Mizutani ,  Tetsuya Kamimura

IPC: C23F1/16 ,  H01L21/3213

CPC classification number: C23F1/16 ,  H01L21/32134

Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.
The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

公开(公告)号：US20220282156A1

公开(公告)日：2022-09-08

申请号：US17825722

申请日：2022-05-26

Applicant: FUJIFILM Corporation

Inventor： Moe NARITA ,  Atsushi Mizutani

IPC: C09K13/06 ,  H01L21/02 ,  H01L21/3213

Abstract: A composition contains a periodic acid compound selected from the group consisting of a periodic acid and a salt thereof, an amine compound that is a specific compound represented by Formula (1) or a salt thereof, and water.

公开(公告)号：US10714682B2

公开(公告)日：2020-07-14

申请号：US16245570

申请日：2019-01-11

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L43/12 ,  H01L21/3065 ,  H01L21/308 ,  H01L43/08 ,  H01L27/105 ,  C23F1/40 ,  C23F4/00 ,  C23F1/30

Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

公开(公告)号：US10049883B2

公开(公告)日：2018-08-14

申请号：US15497224

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Keeyoung Park ,  Atsushi Mizutani

IPC: H01L21/304 ,  C11D17/08 ,  C11D3/04 ,  C11D3/26 ,  C11D3/30 ,  H01L21/027 ,  H01L43/12 ,  H01L27/105 ,  B41N3/08 ,  G03F7/40

Abstract: An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.