公开(公告)号：US09726978B2

公开(公告)日：2017-08-08

申请号：US14717437

申请日：2015-05-20

Applicant: FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Kazutaka Takahashi ,  Atsushi Mizutani ,  Hiroyuki Seki ,  Hideo Fushimi ,  Tomoo Kato

IPC: G03F7/42 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  C09K13/00 ,  C09K13/06 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.