-
公开(公告)号:US20060260676A1
公开(公告)日:2006-11-23
申请号:US11438077
申请日:2006-05-18
申请人: Fei Gao , CheeWee Liu , Sungjoo Lee , Dim-Lee Kwong
发明人: Fei Gao , CheeWee Liu , Sungjoo Lee , Dim-Lee Kwong
IPC分类号: H01L31/00
CPC分类号: H01L31/101 , H01L31/03529 , H01L31/109 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要: A photodetector and a method of manufacturing the photodetector are provided. The photodetector comprises a first semiconductor layer; a dielectric layer formed on the first semiconductor layer, the dielectric layer comprising a plurality of openings; a second semiconductor layer formed on the dielectric layer, such that portions of the second semiconductor layer are in contact with the first semiconductor layer at the openings; wherein regions of structural disorder with dislocations exist at interfaces between the first and second semiconductor layers at the openings.
摘要翻译: 提供光电检测器和制造光电检测器的方法。 光电检测器包括第一半导体层; 形成在所述第一半导体层上的电介质层,所述电介质层包括多个开口; 形成在电介质层上的第二半导体层,使得第二半导体层的部分在开口处与第一半导体层接触; 其中具有位错的结构紊乱区域存在于开口处的第一和第二半导体层之间的界面处。