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    TWO-LINE MIXING OF CHEMICAL AND ABRASIVE PARTICLES WITH ENDPOINT CONTROL FOR CHEMICAL MECHANICAL POLISHING
    3.
    发明申请
    TWO-LINE MIXING OF CHEMICAL AND ABRASIVE PARTICLES WITH ENDPOINT CONTROL FOR CHEMICAL MECHANICAL POLISHING 审中-公开
    化学机械抛光末端控制化学磨料颗粒两相混合

    公开(公告)号：US20100130101A1

    公开(公告)日：2010-05-27

    申请号：US12621376

    申请日：2009-11-18

    申请人： YUCHUN WANG ,  Long Cheng ,  Kuo-Lih Chang ,  Wei-Yung Hsu ,  Wen-Chiang Tu

    发明人： YUCHUN WANG ,  Long Cheng ,  Kuo-Lih Chang ,  Wei-Yung Hsu ,  Wen-Chiang Tu

    IPC分类号： B24B49/04 ,  B24B49/10 ,  B24B49/12 ,  B24B57/02

    CPC分类号： B24B37/042 ,  B24B49/10 ,  B24B49/12 ,  B24B57/02

    摘要： Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.

    摘要翻译： 本文所述的实施例提供了一种用于抛光衬底表面的方法。 所述方法通常包括在处理期间将处理组件存储在多个存储单元中，并且将处理组件组合以在将处理组件流动到抛光垫的同时产生浆料。 使用浆料对基材进行研磨，并测定设置在基材上的材料层的厚度。 然后调整一个或多个处理部件的流速以影响设置在基板上的材料层的去除速率。

    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING
    6.
    发明申请
    SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING 审中-公开
    用于消费品相变化记忆材料抛光的浆料组合物

    公开(公告)号：US20100130013A1

    公开(公告)日：2010-05-27

    申请号：US12622251

    申请日：2009-11-19

    申请人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    发明人： Feng Q. Liu ,  Alain Duboust ,  Wen-Chiang Tu ,  Chenhao Ge ,  Kun Xu ,  Yuchun Wang ,  Yufei Chen

    IPC分类号： H01L21/306 ,  H01L21/304 ,  C09K13/06 ,  C11D3/20

    CPC分类号： C11D3/3947 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/08 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

    摘要： A CMP method for polishing a phase change alloy on a substrate surface including positioning the substrate comprising a phase change alloy material on a platen containing a polishing pad and delivering a polishing slurry to the polishing pad. The polishing slurry includes colloidal particles with a particle size less than 60 nm, in an amount between 0.2% to about 10% by weight of slurry, a pH adjustor, a chelating agent, an oxidizing agent in an amount less than 1% by weight of slurry, and polyacrylic acid. The substrate on the platen is polished to remove a portion of the phase change alloy. A rinsing solution for rinsing the substrate on the platen includes deionized water and at least one component in the deionized water where the component selected from the group consisting of polyethylene imine, polyethylene glycol, polyacrylic amide, alcohol ethoxylates, polyacrylic acid, an azole containing compound, benzo-triazole, and combinations thereof.

    摘要翻译： 一种用于在衬底表面上抛光相变合金的CMP方法，包括将包含相变合金材料的衬底定位在包含抛光垫的压板上并将抛光浆料输送到抛光垫。 抛光浆料包括粒度小于60nm的胶体颗粒，其浆料重量为0.2％至约10％，pH调节剂，螯合剂，小于1重量％的氧化剂 的浆料和聚丙烯酸。 抛光台板上的基板以除去一部分相变合金。 用于冲洗台板上的基材的冲洗溶液包括去离子水和去离子水中的至少一种组分，其中选自聚乙烯亚胺，聚乙二醇，聚丙烯酰胺，醇乙氧基化物，聚丙烯酸，含唑化合物 ，苯并三唑及其组合。

    Using optical metrology for within wafer feed forward process control
    10.
    发明授权
    Using optical metrology for within wafer feed forward process control 有权
    使用光学测量在晶片前馈过程控制中

    公开(公告)号：US08679979B2

    公开(公告)日：2014-03-25

    申请号：US13272078

    申请日：2011-10-12

    申请人： Jeffrey Drue David ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Zhize Zhu ,  Wen-Chiang Tu

    发明人： Jeffrey Drue David ,  Harry Q. Lee ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Zhize Zhu ,  Wen-Chiang Tu

    IPC分类号： H01L21/302

    CPC分类号： B24B37/013 ,  B24B49/12 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter.

    摘要翻译： 控制衬底抛光的方法包括使用第一组参数在第一压板上抛光衬底，用原位光学监测系统从衬底的第一和第二区域获得测量光谱的第一和第二序列，产生 来自第一和第二测量光谱序列的第一和第二序列值，将第一和第二线性函数拟合到第一和第二序列序列，确定第一线性函数和第二线性函数之间的差异，调整至少一个参数 基于所述差异的第二组参数，以及使用所述调整参数在所述第二压板上抛光所述衬底。