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公开(公告)号：US08203171B2
公开(公告)日：2012-06-19
申请号：US12754300
申请日：2010-04-05
申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/74
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/734
摘要： A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
摘要翻译： 基于石墨烯的忆阻器包括第一电极，与第一电极相邻的有缺陷的石墨烯层，包含与缺陷石墨烯层相邻的多个离子的忆阻材料，与该阻滞材料相邻的第二电极以及产生电 在第一和第二电极之间。 在电场的影响下，忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。
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公开(公告)号：US08294132B2
公开(公告)日：2012-10-23
申请号：US12750351
申请日：2010-03-30
申请人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/146 , H01L45/149 , H01L45/165 , H01L45/1658
摘要： A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
摘要翻译： 石墨烯忆阻器包括第一电极，电耦合到第一电极的第二电极，散布在第一和第二电极之间的有源区，调节离子通过有源区迁移的势垒高度的有缺陷的石墨烯结构，快速扩散离子 在电场下迁移以改变石墨烯忆阻器的状态，以及产生电场的源。
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公开(公告)号：US20110240946A1
公开(公告)日：2011-10-06
申请号：US12750351
申请日：2010-03-30
申请人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Feng Miao , Joshua Yang , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/146 , H01L45/149 , H01L45/165 , H01L45/1658
摘要： A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.
摘要翻译： 石墨烯忆阻器包括第一电极，电耦合到第一电极的第二电极，散布在第一和第二电极之间的有源区，调节离子通过有源区迁移的势垒高度的有缺陷的石墨烯结构，快速扩散离子 在电场下迁移以改变石墨烯忆阻器的状态，以及产生电场的源。
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公开(公告)号：US20110240947A1
公开(公告)日：2011-10-06
申请号：US12754300
申请日：2010-04-05
申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L47/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/734
摘要： A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
摘要翻译： 基于石墨烯的忆阻器包括第一电极，与第一电极相邻的有缺陷的石墨烯层，包含与缺陷石墨烯层相邻的多个离子的忆阻材料，与该阻滞材料相邻的第二电极以及产生电 在第一和第二电极之间。 在电场的影响下，忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。
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公开(公告)号：US20110240951A1
公开(公告)日：2011-10-06
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译： 忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。 有源区设置在第一和第二电极之间。 活性区域有缺陷。 石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。
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公开(公告)号：US20120154880A1
公开(公告)日：2012-06-21
申请号：US13259418
申请日：2009-09-10
CPC分类号： G02F1/0102 , G02F1/0121 , G02F2202/06 , G02F2202/10 , G02F2202/16 , G02F2203/12 , G03H1/02 , G03H1/2294 , G03H2001/2271 , G03H2001/303 , G03H2225/22 , G03H2225/32 , G03H2225/33 , G03H2225/35 , G03H2225/60
摘要： Various embodiments of the present invention are directed to external, electronically controllable modulators. In one embodiment, a modulating device (100,400) includes a first electrode (104,404), a second electrode (106,406), and an active region (102,402). The active region is configured so that at least a portion of the active region is disposed between the first electrode and the second electrode. Applying a voltage of an appropriate magnitude and polarity to the electrodes changes the conductivity of the active region which in turn shifts the phase and/or amplitude of electromagnetic radiation transmitted through the active region.
摘要翻译： 本发明的各种实施方案涉及外部的电子可控制调节剂。 在一个实施例中，调制装置（100,400）包括第一电极（104,404），第二电极（106,406）和有源区域（102,402）。 有源区被配置为使得有源区的至少一部分设置在第一电极和第二电极之间。 向电极施加适当幅度和极性的电压改变了有源区的电导率，而有源区的电导又转移了透过有源区的电磁辐射的相位和/或振幅。
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公开(公告)号：US20080317406A1
公开(公告)日：2008-12-25
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： G02B6/28
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译： 光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器 第二个镜头。
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9.发明申请Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法公开(公告)号：US20080237886A1
公开(公告)日：2008-10-02
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/48
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译： 本发明的各种实施例涉及三维横杆阵列。 在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。 每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。 第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向 纳米线在每个交叉列阵列的第三层纳米线中。
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10.发明申请Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures 有权具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法公开(公告)号：US20080237568A1
公开(公告)日：2008-10-02
申请号：US11730486
申请日：2007-04-02
申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
发明人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译： 公开了制备具有受控尺寸的纳米级半导体结构的方法。 还公开了包括一个或多个纳米线的半导体结构。 纳米线可以包括钝化层或具有中空管结构。
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