公开(公告)号：US20080107573A1

公开(公告)日：2008-05-08

申请号：US11877390

申请日：2007-10-23

申请人： Francimar Schmitt ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Hichem M'Saad

IPC分类号： B01J19/00

CPC分类号： H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047

摘要： Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.

公开(公告)号：US20050037153A1

公开(公告)日：2005-02-17

申请号：US10642081

申请日：2003-08-14

申请人： Francimar Schmitt ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H05H1/24

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.

摘要翻译： 沉积低介电常数膜的方法包括向腔室中的基底提供包括一种或多种环状有机硅氧烷和一种或多种惰性气体的气体混合物。 一方面，气体混合物还包括一种或多种氧化性气体。 一个或多个环状有机硅氧烷进入室中的总流速与进入室中的一种或多种惰性气体的总流量的比例为约0.10至约0.20。 优选地，低介电常数膜具有压应力。

公开(公告)号：US07611996B2

公开(公告)日：2009-11-03

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20080105978A1

公开(公告)日：2008-05-08

申请号：US11877403

申请日：2007-10-23

申请人： Francimar Schmitt ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Hichem M'Saad

IPC分类号： H01L23/52

CPC分类号： H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047

摘要： Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.

摘要翻译： 可以通过化学气相沉积含有硅的组分和具有不稳定基团的大的含硅的致孔剂来形成超低K纳米孔隙介电膜。 根据本发明的一个实施方案，可以通过三甲基硅烷（含硅组分）和α-萜品烯（非含硅组分）之间的氧化反应形成低K纳米多孔膜。 根据本发明的某些实施方案，氧化剂可以包括除分子氧之外的其它物质，例如原位或远程引入的水蒸气，然后暴露于RF能量以产生反应性离子物质。

公开(公告)号：US20050227502A1

公开(公告)日：2005-10-13

申请号：US11046162

申请日：2005-01-28

申请人： Francimar Schmitt ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Hichem M'Saad

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76825 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047

摘要： Ultra low K nanoporous dielectric films may be formed by chemical vapor deposition of silicon-containing components and large non-silicon containing porogens having labile groups. In accordance with one embodiment of the present invention, a low K nanoporous film may be formed by the oxidative reaction between trimethylsilane (the silicon-containing component) and alpha-terpinene (the non-silicon containing component). In accordance with certain embodiments of the present invention, the oxidant can comprise other than molecular oxygen, for example water vapor introduced in-situ or remotely, and then exposed to RF energy to generate reactive ionic species.

摘要翻译： 可以通过化学气相沉积含有硅的组分和具有不稳定基团的大的含硅的致孔剂来形成超低K纳米孔隙介电膜。 根据本发明的一个实施方案，可以通过三甲基硅烷（含硅组分）和α-萜品烯（非含硅组分）之间的氧化反应形成低K纳米多孔膜。 根据本发明的某些实施方案，氧化剂可以包括除分子氧之外的其它物质，例如原位或远程引入的水蒸气，然后暴露于RF能量以产生反应性离子物质。

公开(公告)号：US20050214457A1

公开(公告)日：2005-09-29

申请号：US10812717

申请日：2004-03-29

申请人： Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Kimberly Branshaw ,  Padmanabhan Krishnaraj ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122

摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.

摘要翻译： 一种沉积低介电常数膜的方法包括：向室内提供包含环状有机硅氧烷和N 2 O 2的气体混合物作为氧化气体，并将RF功率施加到气体混合物以沉积低介电常数 电影。 气体混合物还可以包括氧和/或直链烃。 在一个方面，气体混合物包括N 2 O 3和氧气作为氧化气体，并且N 2 O 2的流量与总体流速的比率 N 2 O，氧在约0.1至约0.5之间。

公开(公告)号：US20080099920A1

公开(公告)日：2008-05-01

申请号：US11876668

申请日：2007-10-22

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L23/538 ,  B32B3/00

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US07259111B2

公开(公告)日：2007-08-21

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20060160376A1

公开(公告)日：2006-07-20

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20050230834A1

公开(公告)日：2005-10-20

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。