Platen arrangement for a chemical-mechanical planarization apparatus
    5.
    发明授权
    Platen arrangement for a chemical-mechanical planarization apparatus 失效
    用于化学机械平面化装置的压板装置

    公开(公告)号:US06485359B1

    公开(公告)日:2002-11-26

    申请号:US09663815

    申请日:2000-09-15

    IPC分类号: B24B2900

    CPC分类号: B24B7/228 B24B55/02 B24D9/085

    摘要: A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.

    摘要翻译: 化学机械抛光机设置有具有整体子垫的压板。 将固定的研磨抛光层安装到抛光层和子焊盘之间,而不需要在压板和子焊盘的顶表面上。 抛光层例如被真空安装到压板的整体子垫上。 在压板中设置冷却装置,其冷却抛光层并提高产品质量。

    Thermal preconditioning fixed abrasive articles
    6.
    发明授权
    Thermal preconditioning fixed abrasive articles 失效
    热预处理固定磨料制品

    公开(公告)号:US06832948B1

    公开(公告)日:2004-12-21

    申请号:US09454354

    申请日:1999-12-03

    IPC分类号: B24B100

    摘要: The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

    摘要翻译: 固定磨料制品的CMP去除率增加,并且通过热预处理提高了晶片到晶片的均匀性。 实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品,以增加和稳定Cu或Cu合金CMP去除速率。

    Platen with debris control for chemical mechanical planarization
    7.
    发明授权
    Platen with debris control for chemical mechanical planarization 失效
    压板具有用于化学机械平面化的碎屑控制

    公开(公告)号:US06659849B1

    公开(公告)日:2003-12-09

    申请号:US09705965

    申请日:2000-11-03

    IPC分类号: B24B100

    摘要: Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.

    摘要翻译: 通常,用于清洁抛光材料的网的背面的方法和设备。 在一个实施例中,该设备包括具有支撑表面的压板,该支撑表面适于支撑该纸幅的背面,以及布置在该压板上并且邻近该纸幅背面的纸幅清洁剂。 还提供了一种用于清洁抛光材料的网的方法。 在一个实施例中,该方法包括以下步骤:将平板上的抛光介质的一部分支撑在压板上,将幅材的一部分推进到压板上,以及清洁纸幅的展开部分。

    Platen for retaining polishing material
    8.
    发明授权
    Platen for retaining polishing material 有权
    压板用于保留抛光材料

    公开(公告)号:US06592439B1

    公开(公告)日:2003-07-15

    申请号:US09709769

    申请日:2000-11-10

    IPC分类号: B24B2900

    摘要: Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

    摘要翻译: 通常,提供了用于保持抛光材料的方法和装置。 在一个实施例中,该装置包括具有顶表面,多个通道和一个或多个真空端口的压板。 顶表面适于支撑抛光材料。 多个通道形成在顶表面的抛光区域中。 真空端口设置在压板中,并且至少一个端口与至少一个通道连通。 当向端口施加真空时,通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

    Chemical mechanical polishing with friction-based control
    9.
    发明授权
    Chemical mechanical polishing with friction-based control 有权
    化学机械抛光以摩擦为主的控制

    公开(公告)号:US06887129B2

    公开(公告)日:2005-05-03

    申请号:US10666891

    申请日:2003-09-17

    摘要: A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

    摘要翻译: 化学机械抛光装置具有抛光面,以可控制的压力将衬底压靠抛光表面的载体头,以一定速度在抛光表面和载体头之间产生相对运动的电动机和控制器。 控制器被配置为响应于取决于基板和抛光表面之间的摩擦的信号来改变压力和速度中的至少一个,以保持恒定的扭矩,摩擦力或摩擦系数。

    Chemical mechanical polishing with friction-based control
    10.
    发明授权
    Chemical mechanical polishing with friction-based control 失效
    化学机械抛光以摩擦为主的控制

    公开(公告)号:US06623334B1

    公开(公告)日:2003-09-23

    申请号:US09562801

    申请日:2000-05-02

    IPC分类号: B24B4916

    摘要: A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

    摘要翻译: 化学机械抛光装置具有抛光面,以可控制的压力将衬底压靠抛光表面的载体头,以一定速度在抛光表面和载体头之间产生相对运动的电动机和控制器。 控制器被配置为响应于取决于基板和抛光表面之间的摩擦的信号来改变压力和速度中的至少一个,以保持恒定的扭矩,摩擦力或摩擦系数。