公开(公告)号：US5466325A

公开(公告)日：1995-11-14

申请号：US288988

申请日：1994-08-11

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

IPC分类号： B29C63/00 ,  G03F7/34 ,  G03F7/42 ,  B32B7/10 ,  B32B31/00

CPC分类号： B29C63/0013 ,  G03F7/343 ,  G03F7/42 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T156/1189

摘要： A method for removing a resist pattern formed on a semiconductor wafer, and a curable pressure-sensitive adhesive, adhesive sheets and an apparatus used for the method. The resist-removing method comprising adhering an adhesive tape on an upper surface of a resist pattern formed on an article and peeling off the resist pattern together with the adhesive tape; the curable pressure-sensitive adhesive constituting the adhesive tape, comprising a pressure-sensitive adhesive polymer containing a non-volatile compound having at least one unsaturated double bond in the molecule and having a good affinity with a resist material to be removed; the adhesive sheet comprising a film substrate having formed thereon the curable pressure-sensitive adhesive; and the resist-removing apparatus comprising a means for press-adhering the adhesive tape, a tape-peeling means, and a substrate-washing means.

摘要翻译： 一种用于去除形成在半导体晶片上的抗蚀剂图案的方法，以及用于该方法的可固化压敏粘合剂，粘合片和设备。 抗蚀剂去除方法包括将粘合带粘附在形成在制品上的抗蚀剂图案的上表面上并与粘合带一起剥离抗蚀剂图案; 构成粘合带的可固化压敏粘合剂包括在分子中含有至少一个不饱和双键的非挥发性化合物并且与要去除的抗蚀剂材料具有良好亲和性的压敏粘合剂聚合物; 所述粘合片包括其上形成有所述可固化压敏粘合剂的膜基材; 并且抗蚀剂去除装置包括用于压粘粘合带的装置，带剥离装置和基板清洗装置。

公开(公告)号：US5959011A

公开(公告)日：1999-09-28

申请号：US751254

申请日：1996-11-18

申请人： Fumio Mizuno ,  Noburu Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

发明人： Fumio Mizuno ,  Noburu Moriuchi ,  Seiichiro Shirai ,  Yutaka Moroishi ,  Makoto Sunakawa ,  Michirou Kawanishi

IPC分类号： B29C63/00 ,  G03F7/34 ,  G03F7/42 ,  C08K5/09

CPC分类号： B29C63/0013 ,  G03F7/343 ,  G03F7/42 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T156/1189

摘要： A method for removing a resist pattern formed on a semiconductor wafer, and a curable pressure-sensitive adhesive, adhesive sheets and an apparatus used for the method. The resist-removing method comprising adhering an adhesive tape on an upper surface of a resist pattern formed on an article and peeling off the resist pattern together with the adhesive tape; the curable pressure-sensitive adhesive constituting the adhesive tape, comprising a pressure-sensitive adhesive polymer containing a non-volatile compound having at least one unsaturated double bond in the molecule and having a good affinity with a resist material to be removed; the adhesive sheet comprising a film substrate having formed thereon the curable pressure-sensitive adhesive; and the resist-removing apparatus comprising a means for press-adhering the adhesive tape, a tape-peeling means, and a substrate-washing means.

公开(公告)号：US5736300A

公开(公告)日：1998-04-07

申请号：US694263

申请日：1996-08-08

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/30 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70433

摘要： One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

公开(公告)号：USRE37996E1

公开(公告)日：2003-02-18

申请号：US09544634

申请日：2000-04-06

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

IPC分类号： G03C500

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70433

摘要： One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

摘要翻译： 本发明的一个目的是提供一种能够在半导体器件或半导体集成电路器件的制造工艺中曝光各种精细图案的缩小投影曝光方法。 为了实现上述目的，本发明的结构是使用具有规定的校正图案的相移掩模在恒定模式的掩模图案域的末端或掩模图案域的边界上进行缩小的投影曝光 多种模式。 根据该结构，由于通过校正图案来消除结束效果等，因此可以暴露各种和精细图案。

公开(公告)号：US5436095A

公开(公告)日：1995-07-25

申请号：US912511

申请日：1992-07-13

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/30 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00 ,  G03F9/02

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70433

摘要： One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

摘要翻译： 本发明的一个目的是提供一种能够在半导体器件或半导体集成电路器件的制造工艺中曝光各种精细图案的缩小投影曝光方法。 为了实现上述目的，本发明的结构是使用具有规定的校正图案的相移掩模在恒定模式的掩模图案域的末端或掩模图案域的边界上执行缩小的投影曝光 多种模式。 根据该结构，由于通过校正图案来消除结束效果等，因此可以暴露各种和精细图案。

公开(公告)号：US5578422A

公开(公告)日：1996-11-26

申请号：US443431

申请日：1995-05-18

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai ,  Masayuki Morita

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/30 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F7/70283 ,  G03F7/70433

摘要： One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

公开(公告)号：US5405810A

公开(公告)日：1995-04-11

申请号：US869174

申请日：1992-04-16

申请人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai

发明人： Fumio Mizuno ,  Noboru Moriuchi ,  Seiichiro Shirai

IPC分类号： G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  H01L23/544 ,  H01L21/312

CPC分类号： G03F9/70 ,  H01J37/3045 ,  H01L21/682 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975

摘要： The present invention enables the accuracy of aligning a wafer and a reticle with each other in the exposure step in the manufacture of a semiconductor integrated circuit device to be improved. The portions of a metal film 5 and a resist film 6 which cover an alignment mark 4 on a wafer 1 are removed by a gas assisted etching treatment using a laser beam prior to the execution of an exposure treatment, so as to bare the alignment mark 4. The position detecting light is then applied from an alignment mark position detecting means in a reduction projection exposure unit 11 to the alignment mark 4, the position of the alignment mark 4 being detected on the basis of the light reflected on and scattered from the alignment mark 4.

摘要翻译： 本发明使半导体集成电路器件的制造中的曝光步骤中的晶片和掩模版之间的对准精度得以提高。 在执行曝光处理之前，通过使用激光束的气体辅助蚀刻处理去除覆盖晶片1上的对准标记4的金属膜5和抗蚀剂膜6的部分，以便露出对准标记 然后，将位置检测光从缩小投影曝光单元11中的对准标记位置检测装置施加到对准标记4，基于从其反射和散射的光检测对准标记4的位置 对准标记4。

公开(公告)号：US20080116376A1

公开(公告)日：2008-05-22

申请号：US12005387

申请日：2007-12-27

申请人： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

发明人： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

IPC分类号： H01J37/28

CPC分类号： G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T7/13 ,  G06T7/62 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

摘要： It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample, based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

摘要翻译： 本发明的目的是获得一种聚焦于样品的所有部分的图像，并提供一种能够获得在整个样品上没有模糊部分的二维图像的带电粒子束装置。 为了实现上述目的，本发明包括用于改变从带电粒子源发射的带电粒子束的聚焦条件的装置，用于检测从所述样品的表面部分照射的带电粒子的带电粒子检测器， 基于所述带电粒子束聚焦的信号，所述信号是从带电粒子检测器输出的信号中的装置，用于构成样品的表面部分的二维图像的装置。

公开(公告)号：US07329868B2

公开(公告)日：2008-02-12

申请号：US11515732

申请日：2006-09-06

申请人： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

发明人： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

IPC分类号： H01J37/21

CPC分类号： G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T7/13 ,  G06T7/62 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

摘要： It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

摘要翻译： 本发明的目的是获得一种聚焦于样品的所有部分的图像，并提供一种能够获得在整个样品上没有模糊部分的二维图像的带电粒子束装置。 为了实现上述目的，本发明包括用于改变从带电粒子源发射的带电粒子束的聚焦条件的装置，用于检测从所述样品的表面部分照射的带电粒子的带电粒子检测器， 发射的带电粒子束，以及用于基于所述带电粒子束聚焦的信号来组合样品的表面部分的二维图像的装置，所述信号在从带电粒子检测器输出的信号中。

公开(公告)号：US06067153A

公开(公告)日：2000-05-23

申请号：US855824

申请日：1997-05-12

申请人： Fumio Mizuno

发明人： Fumio Mizuno

IPC分类号： G01B15/00 ,  G01B15/08 ,  G01N23/225 ,  G01N37/00 ,  G01Q30/04 ,  G01Q60/24 ,  G01R31/26 ,  G01R31/302 ,  G01R31/305 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/46

CPC分类号： G06T7/001 ,  G01N23/225 ,  G01R31/305 ,  G06T2207/10061 ,  G06T2207/30148

摘要： A high-speed pattern defect inspecting apparatus with a high sensitivity and less erroneous detection. In the pattern defect inspecting apparatus, a wafer is scanned by an electron beam, secondary electron signal generated by the scanning is stored in an image memory, and the stored image is used to cause a display unit to be subjected to a brightness modulation. A reference pattern image previously stored in the image memory is compared with a detected wafer pattern image to find a difference between the both images, and the difference is detected as a defect in a wafer pattern. The wafer scanning of the electron beam is carried out only for an arbitrary specified part thereon.

摘要翻译： 具有灵敏度高，检错错误的高速图案缺陷检查装置。 在图案缺陷检查装置中，通过电子束扫描晶片，通过扫描产生的二次电子信号被存储在图像存储器中，并且存储的图像用于使显示单元进行亮度调制。 将预先存储在图像存储器中的参考图案图像与检测到的晶片图案图像进行比较以找到两个图像之间的差异，并且将该差异作为晶片图案中的缺陷检测。 电子束的晶片扫描仅对其上的任意指定部分进行。