公开(公告)号：US4438197A

公开(公告)日：1984-03-20

申请号：US369000

申请日：1982-04-16

申请人： Fusao Tomita ,  Yuzuru Matsuda ,  Kunikatsu Shirahata ,  Keiichi Takahashi ,  Hirofumi Nakano ,  Tomoyasu Sato ,  Shuji Okubo ,  Nobuo Nakamura

发明人： Fusao Tomita ,  Yuzuru Matsuda ,  Kunikatsu Shirahata ,  Keiichi Takahashi ,  Hirofumi Nakano ,  Tomoyasu Sato ,  Shuji Okubo ,  Nobuo Nakamura

IPC分类号： C12P17/16 ,  A61K31/35 ,  A61P31/04 ,  A61P35/00 ,  C07D407/04 ,  C12P17/18 ,  C12R1/465 ,  C07G11/00

CPC分类号： C07D407/04 ,  C12P17/181 ,  C12R1/465 ,  Y10S435/886 ,  Y10S435/897 ,  Y10S514/908

摘要： The antibacterial compound DC-38-V is produced by culturing a microorganism belonging to the genus Streptomyces.

摘要翻译： 通过培养属于链霉菌属的微生物来生产抗菌化合物DC-38-V。

公开(公告)号：US4340725A

公开(公告)日：1982-07-20

申请号：US175324

申请日：1980-08-04

申请人： Fusao Tomita ,  Yuzura Matsuda ,  Kunikatsu Shirahata ,  Keiichi Takahashi ,  Hirofumi Nakano ,  Tomoyasu Sato ,  Shuji Okubo ,  Nobuo Nakamura

发明人： Fusao Tomita ,  Yuzura Matsuda ,  Kunikatsu Shirahata ,  Keiichi Takahashi ,  Hirofumi Nakano ,  Tomoyasu Sato ,  Shuji Okubo ,  Nobuo Nakamura

IPC分类号： C12P17/16 ,  A61K31/35 ,  A61P31/04 ,  A61P35/00 ,  C07D407/04 ,  C12P17/18 ,  C12R1/465 ,  C07G11/00

CPC分类号： C07D407/04 ,  C12P17/181 ,  C12R1/465 ,  Y10S435/886 ,  Y10S435/897 ,  Y10S514/908

摘要： The antibacterial compound DC-38-V is produced by culturing a microorganism belonging to the genus Streptomyces.

摘要翻译： 通过培养属于链霉菌属的微生物来生产抗菌化合物DC-38-V。

公开(公告)号：US4346075A

公开(公告)日：1982-08-24

申请号：US252062

申请日：1981-04-08

申请人： Fusao Tomita ,  Tatsuya Tamaoki ,  Nobuo Nakamura ,  Shuji Okubo ,  Kunikatsu Shirahata ,  Masaji Kasai ,  Tetsuo Oka

发明人： Fusao Tomita ,  Tatsuya Tamaoki ,  Nobuo Nakamura ,  Shuji Okubo ,  Kunikatsu Shirahata ,  Masaji Kasai ,  Tetsuo Oka

IPC分类号： C07H17/08 ,  C12P17/16 ,  C12P19/60 ,  A61K35/00

CPC分类号： C07H17/08 ,  C12P17/162 ,  C12P19/60 ,  C12R1/30

摘要： A new antibacterial compound, DC-11 is produced by fermentation of a microorganism belonging to the genus Micromonospora. The antibiotic is accumulated in the culture medium and is isolated therefrom.

摘要翻译： 通过发酵属于小单孢菌属的微生物来生产新的抗菌化合物DC-11。 抗生素在培养基中积聚并从中分离。

公开(公告)号：US09322111B2

公开(公告)日：2016-04-26

申请号：US13884371

申请日：2011-11-10

申请人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

发明人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

IPC分类号： C30B29/34 ,  C30B19/12 ,  C30B29/28 ,  G02B1/02 ,  H01F10/24 ,  G02F1/09

CPC分类号： C30B29/34 ,  C30B19/12 ,  C30B29/28 ,  G02B1/02 ,  G02F1/093 ,  H01F10/24

摘要： A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0

摘要翻译： 铋取代的稀土铁石榴石晶体膜（RIG）具有小于0.60dB的插入损耗并且可以以高产率生产，以及通过液相外延生长的光隔离器 由Gd 3（ScGa）5 O 12化学式表示的非磁性石榴石基材，其中铋取代的稀土类铁石榴石晶体膜由化学式La3-x-yGdxBiyFe5O12（条件是0

公开(公告)号：US20130224520A1

公开(公告)日：2013-08-29

申请号：US13884363

申请日：2011-11-10

申请人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

发明人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

IPC分类号： C30B29/34 ,  G02B1/02

CPC分类号： C30B29/34 ,  C30B19/12 ,  C30B29/28 ,  G02B1/02 ,  G02F1/0036 ,  G02F1/093

摘要： [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator.[Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89×1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.

摘要翻译： 本发明提供一种铋取代的稀土铁石榴石晶体膜（RIG），其具有小于0.6dB的插入损耗并且可以以高产率生产，以及光隔离器。 [解决方案]提供一种铋取代的稀土铁石榴石晶体膜，其通过液相外延在由化学式Gd 3（ScGa）5 O 12表示的非磁性石榴石基材上生长，其中RIG由 Nd3-x-yGdxBiyFe5O12的化学式，x和y满足0.89×1.43和0.85 @ y @ 1.19。 与传统的RIG相反，本发明的Nd3-x-yGdxBiyFe5O12的化学式表示的RIG具有小于0.6dB的插入损耗，并且可以减少由于波长吸收光而产生的热量 约1 mum。 因此，RIG具有如此显着的效果，RIG可用作用于高功率激光装置中用于光隔离器的法拉第旋转器用于处理。

公开(公告)号：US20130224500A1

公开(公告)日：2013-08-29

申请号：US13884371

申请日：2011-11-10

申请人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

发明人： Shuuji Oosumi ,  Yasutaka Nomi ,  Nobuo Nakamura ,  Hiroshi Hatanaka ,  Tomio Kajigaya

IPC分类号： C30B29/34

CPC分类号： C30B29/34 ,  C30B19/12 ,  C30B29/28 ,  G02B1/02 ,  G02F1/093 ,  H01F10/24

摘要： [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator.[Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0

摘要翻译： 本发明提供一种铋取代的稀土铁石榴石晶体膜（RIG），其具有小于0.60dB的插入损耗并且可以以高产率产生，以及光隔离器。 [解决方案]提供一种铋取代的稀土铁石榴石晶体膜，其通过液相外延在由化学式Gd 3（ScGa）5 O 12表示的非磁性石榴石基材上生长，其中铋取代的稀土 - 土石榴石晶体膜由La3-x-yGdxBiyFe5O12的化学式（条件是0

公开(公告)号：US20120286388A1

公开(公告)日：2012-11-15

申请号：US13545673

申请日：2012-07-10

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

摘要翻译： 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

公开(公告)号：US07687831B2

公开(公告)日：2010-03-30

申请号：US10382058

申请日：2003-03-05

申请人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

发明人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

IPC分类号： H01L27/148 ,  H01L31/113 ,  H01L31/00 ,  H01L31/06

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

摘要翻译： 以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在 比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。 此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽 从而可以实现光电二极管PD的灵敏度的提高。

公开(公告)号：US07638355B2

公开(公告)日：2009-12-29

申请号：US11973282

申请日：2007-10-05

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US20090076191A1

公开(公告)日：2009-03-19

申请号：US11914298

申请日：2006-05-12

申请人： Taizo Aoyama ,  Nobuo Nakamura ,  Yoshihiko Hashimoto ,  Noriyuki Suzuki

发明人： Taizo Aoyama ,  Nobuo Nakamura ,  Yoshihiko Hashimoto ,  Noriyuki Suzuki

IPC分类号： C08L51/00

CPC分类号： C08L51/003 ,  C08F265/04 ,  C08F279/02 ,  C08F283/12 ,  C08K5/053 ,  C08K5/20 ,  C08K5/21 ,  C08L33/08 ,  C08L33/14 ,  C08L51/00 ,  C08L51/04 ,  C08L67/04 ,  C08L2666/02 ,  C08L2666/04

摘要： Disclosed is a resin composition excellent in impact resistance, tensile properties and processability such as draw down property, which is produced by using a plant-derived biodegradable polymer produced by actively fixing carbon dioxide present in the earth. A resin composition comprising (A) a specific biodegradable (3-hydroxyalkanoate) copolymer, (B) a graft copolymer and (C) an acrylic processing modifier, the graft copolymer (B) and the acrylic processing modifier (C) being contained in the composition in amounts of 0.1 to 100 parts by weight and 0.1 to 30 parts by weight, respectively, based on 100 parts by weight of the biodegradable (3-hydroxyalkanoate) copolymer (A).

摘要翻译： 公开了通过使用通过主动固定存在于地球中的二氧化碳而制造的植物来源的生物可降解聚合物制造的抗冲击性，拉伸性能和加工性，例如拉伸性能优异的树脂组合物。 一种树脂组合物，其包含（A）特定的可生物降解的（3-羟基链烷酸酯）共聚物，（B）接枝共聚物和（C）丙烯酸类加工改性剂，所述接枝共聚物（B）和丙烯酸类加工改性剂（C） 基于100重量份的生物可降解（3-羟基链烷酸酯）共聚物（A），分别为0.1至100重量份和0.1至30重量份的组合物。