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    Method for controlling configuration of laser induced breakdown and ablation
    1.
    再颁专利
    Method for controlling configuration of laser induced breakdown and ablation 有权
    用于控制激光诱发击穿和消融的配置的方法

    公开(公告)号：USRE37585E1

    公开(公告)日：2002-03-19

    申请号：US09366685

    申请日：1999-08-04

    申请人： Gérard Mourou ,  Detao Du ,  Subrata K. Dutta ,  Victor Elner ,  Ron Kurtz ,  Paul R. Lichter ,  Xinbing Liu ,  Peter P. Pronko ,  Jeffrey A. Squier

    发明人： Gérard Mourou ,  Detao Du ,  Subrata K. Dutta ,  Victor Elner ,  Ron Kurtz ,  Paul R. Lichter ,  Xinbing Liu ,  Peter P. Pronko ,  Jeffrey A. Squier

    IPC分类号： B23K2602

    CPC分类号： B23K26/0624 ,  A61B18/20 ,  A61F9/00825 ,  B23K26/066 ,  B23K26/382 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/50 ,  B23K2103/54

    摘要： In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (Fth) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused to a point at or beneath the surface of a material where laser induced breakdown is desired. The beam may be used in combination with a mask in the beam path. The beam or mask may be moved in the x, y, and Z directions to produce desired features. The technique can produce features smaller than the spot size and Rayleigh range due to enhanced damage threshold accuracy in the short pulse regime.

    摘要翻译： 在一个方面，本发明提供了一种用于脉冲激光束的材料的激光诱导击穿的方法，其中材料的特征在于注射击穿阈值（Fth）与激光束脉冲宽度（T）的关系，其显示突然，快速， 并且在预定的激光脉冲宽度值处具有明显的变化或至少清楚可检测和明显的斜率变化。 该方法包括生成激光脉冲束，其中每个脉冲具有等于或小于预定激光脉冲宽度值的脉冲宽度。 光束被聚焦到需要激光诱发击穿的材料的表面上或下方的点。光束可以与光束路径中的掩模组合使用。 光束或掩模可以在x，y和z方向上移动以产生期望的特征。 该技术可以产生小于点尺寸和瑞利范围的特征，这是由于在短脉冲状态下增强的损伤阈值精度。

    High energy ion implanted silicon on insulator structure
    3.
    发明授权
    High energy ion implanted silicon on insulator structure 失效
    高能离子注入硅绝缘体结构

    公开(公告)号：US5147808A

    公开(公告)日：1992-09-15

    申请号：US509252

    申请日：1990-04-12

    申请人： Peter P. Pronko

    发明人： Peter P. Pronko

    IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/306

    CPC分类号： H01L21/2652 ,  H01L21/2007 ,  H01L21/30604 ,  Y10S148/135 ,  Y10S438/97

    摘要： A silicon on insulator structure and method of making the structure. A high purity, substantially defect free silicon wafer is the basis for forming a final thin silicon layer on an insulator layer, the silicon having substantially the same chemical and structural state as the starting silicon wafer. Dopant atoms of MeV energy range are implanted into the silicon wafer, the silicon wafer having an insulator layer coupled thereto; and an underlying silicon carrier wafer is coupled to the insulator. The implanted silicon wafer undergoes preferential etch stop removal of the silicon up to the implanted dopant layer, followed by selective removal of the dopant atom layer, leaving the desired high quality silicon layer on an insulator substrate.

    摘要翻译： 一种绝缘体上硅结构及其制造方法。 高纯度，基本上无缺陷的硅晶片是在绝缘体层上形成最终薄硅层的基础，硅具有与起始硅晶片基本上相同的化学和结构状态。 将MeV能量范围的掺杂原子注入到硅晶片中，硅晶片具有耦合到其上的绝缘体层; 并且底层硅载体晶片被耦合到绝缘体。 注入的硅晶片经历优先蚀刻停止去除硅到注入的掺杂剂层，随后选择性去除掺杂剂原子层，在绝缘体衬底上留下所需的高质量硅层。

    Method for laser induced isotope enrichment
    4.
    发明授权
    Method for laser induced isotope enrichment 失效
    激光诱导同位素浓缩方法

    公开(公告)号：US06787723B2

    公开(公告)日：2004-09-07

    申请号：US10086304

    申请日：2002-02-28

    申请人： Peter P. Pronko ,  Paul A. Vanrompay ,  Zhiyu Zhang

    发明人： Peter P. Pronko ,  Paul A. Vanrompay ,  Zhiyu Zhang

    IPC分类号： B01D500

    CPC分类号： B01D59/44

    摘要： Methods for separating isotopes or chemical species of an element and causing enrichment of a desired isotope or chemical species of an element utilizing laser ablation plasmas to modify or fabricate a material containing such isotopes or chemical species are provided. This invention may be used for a wide variety of materials which contain elements having different isotopes or chemical species.

    摘要翻译： 提供用于分离元素的同位素或化学物质并引起利用激光烧蚀等离子体来改善或制造含有这种同位素或化学物质的材料的元素的期望同位素或化学物质的富集的方法。 本发明可以用于含有具有不同同位素或化学物质的元素的各种材料。

    Method for laser induced isotope enrichment
    5.
    发明授权
    Method for laser induced isotope enrichment 失效
    激光诱导同位素浓缩方法

    公开(公告)号：US06586696B1

    公开(公告)日：2003-07-01

    申请号：US09914401

    申请日：2001-11-30

    申请人： Peter P. Pronko ,  Paul A. Vanrompay ,  John Nees ,  Zhiyu Zhang

    发明人： Peter P. Pronko ,  Paul A. Vanrompay ,  John Nees ,  Zhiyu Zhang

    IPC分类号： B01D500

    CPC分类号： B01D59/44

    摘要： The invention provides new methods for separating isotopes of an element and causing enrichment of a desired isotope of an element utilizing laser ablation plasmas to modify or fabricate a material containing such isotopes. This invention may be used for a wide variety of materials which contain elements having different isotopes.

    摘要翻译： 本发明提供了用于分离元素的同位素并引起元素的期望同位素富集的新方法，其利用激光烧蚀等离子体来修饰或制造含有这种同位素的材料。 本发明可用于含有具有不同同位素元素的各种材料。

    High energy ion implanted silicon on insulator structure
    6.
    发明授权
    High energy ion implanted silicon on insulator structure 失效
    高能离子注入硅绝缘体结构

    公开(公告)号：US5136344A

    公开(公告)日：1992-08-04

    申请号：US618009

    申请日：1990-11-26

    申请人： Peter P. Pronko

    发明人： Peter P. Pronko

    IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/306

    CPC分类号： H01L21/2652 ,  H01L21/2007 ,  H01L21/30604

    摘要： A silicon on insulator structure and method of making the structure. A high purity, substantially defect free silicon wafer is the basis for forming a final thin silicon layer on an insulator layer, the silicon having substantially the same chemical and structural state as the starting silicon wafer. Dopant atoms of MeV energy range are implanted into the silicon wafer, the silicon wafer haivng an insulator layer coupled thereto; and an underlying silicon carrier wafer is coupled to the insulator. The implanted silicon wafer undergoes preferential etch stop removal of the silicon up to the implanted dopant layer, followed by selective removal of the dopant atom layer, leaving the desired high quality silicon layer on an insulator substrate.

    摘要翻译： 一种绝缘体上硅结构及其制造方法。 高纯度，基本上无缺陷的硅晶片是在绝缘体层上形成最终薄硅层的基础，硅具有与起始硅晶片基本上相同的化学和结构状态。 将MeV能量范围的掺杂原子注入到硅晶片中，硅晶片具有耦合到其上的绝缘体层; 并且底层硅载体晶片被耦合到绝缘体。 注入的硅晶片经历优先蚀刻停止去除硅到注入的掺杂剂层，随后选择性去除掺杂剂原子层，在绝缘体衬底上留下所需的高质量硅层。

    Method for forming diamondlike carbon coating
    8.
    发明授权
    Method for forming diamondlike carbon coating 失效
    形成金刚石碳涂层的方法

    公开(公告)号：US5192523A

    公开(公告)日：1993-03-09

    申请号：US707319

    申请日：1991-05-28

    申请人： Richard L. Wu ,  Peter P. Pronko

    发明人： Richard L. Wu ,  Peter P. Pronko

    IPC分类号： C23C16/26

    CPC分类号： C23C16/26

    摘要： A method of depositing a diamondlike carbon coating on a substrate. An ionized beam of pure methane or methane and hydrogen, and having an ion kinetic energy in the range of 500-1,000 eV is impinged on a substrate to deposit, thereon, a diamondlike carbon coating. Various substrates can be utilized, and various cleaning procedures are developed for use with the particular substrates to improve the adhesion of the diamondlike carbon coatings. The methane-hydrogen ratio and the operating pressure of the ionized gas can each be varied to vary the carbon-hydrogen ratio of the resulting diamondlike coating to thereby alter the characteristics of the coating.

    摘要翻译： 在基底上沉积类金刚石碳涂层的方法。 纯甲烷或甲烷和氢的离子束，其离子动能在500-1,000eV范围内，撞击到基底上以沉积在其上的类金刚石碳涂层。 可以使用各种基材，并且开发各种清洁方法以与特定基材一起使用，以改善类金刚石碳涂层的粘附性。 可以各自改变电离气体的甲烷 - 氢比和操作压力，以改变所得到的类金刚石涂层的碳 - 氢比，从而改变涂层的特性。