公开(公告)号：US20130078784A1

公开(公告)日：2013-03-28

申请号：US13425979

申请日：2012-03-21

申请人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

IPC分类号： H01L21/762 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

摘要： According to one embodiment, the CMP slurry includes abrasive particles made of colloidal silica in an amount of 0.5 to 3% by mass of a total mass of the CMP slurry, and a polycarboxylic acid having a weight average molecular weight of from 500 to 10,000, in an amount of 0.1 to 1% by mass of the total mass of the CMP slurry. 50 to 90% by mass of the abrasive particles each has a primary particle diameter of 3 to 10 nm. The CMP slurry has a pH within a range of 2.5 to 4.5.

摘要翻译： 根据一个实施方案，CMP浆料包括由胶浆二氧化硅制成的磨料颗粒，其量为CMP浆料的总质量的0.5至3质量％，以及重均分子量为500至10,000的多元羧酸， 其量为CMP浆料总质量的0.1〜1质量％。 50〜90质量％的研磨粒子的一次粒径为3〜10nm。 CMP浆料的pH在2.5至4.5的范围内。

公开(公告)号：US20130040456A1

公开(公告)日：2013-02-14

申请号：US13427950

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上的绝缘膜中形成沟槽。 在绝缘膜上形成下层膜。 在下层膜上形成金属膜。 通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。 通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。 通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。

公开(公告)号：US08703004B2

公开(公告)日：2014-04-22

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： C03C15/00

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US08936729B2

公开(公告)日：2015-01-20

申请号：US13603924

申请日：2012-09-05

申请人： Akifumi Gawase ,  Yukiteru Matsui

发明人： Akifumi Gawase ,  Yukiteru Matsui

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31055 ,  H01L21/28273 ,  H01L21/76275 ,  H01L21/76283

摘要： According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

摘要翻译： 根据一个实施例，提出了一种平面化方法。 在平面化方法中，通过使待处理的表面与固态板的表面接触或接近固化板的表面，在处理溶液中对包含氧化硅膜的被处理物进行处理的表面被平坦化 哪些氟被吸附。 氟和固态板之间的结合能低于氟和硅之间的键合能。

公开(公告)号：US20100055893A1

公开(公告)日：2010-03-04

申请号：US12536631

申请日：2009-08-06

申请人： Kei WATANABE ,  Akifumi Gawase ,  Kenichi Otsuka

发明人： Kei WATANABE ,  Akifumi Gawase ,  Kenichi Otsuka

IPC分类号： H01L21/3205

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76835

摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having a wiring provided therein; etching the insulating film, or, etching the insulating film and the interlayer sacrificial film to form a trench reaching the interlayer sacrificial film; forming a gas permeable film in the trench; gasifying and removing the interlayer sacrificial film through the trench and the gas permeable film; and forming a sealing film on the gas permeable film for sealing the vicinity of an opening of the trench after removing the interlayer sacrificial film.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在具有半导体元件的半导体衬底之上形成层间牺牲膜和绝缘膜，所述层间牺牲膜具有设置在其中的布线; 蚀刻绝缘膜，或者蚀刻绝缘膜和层间牺牲膜以形成到达层间牺牲膜的沟槽; 在沟槽中形成透气膜; 通过沟槽和透气膜气化和去除层间牺牲膜; 在透气膜上形成密封膜，用于在除去层间牺牲膜之后密封沟槽的开口附近。

公开(公告)号：US07781301B2

公开(公告)日：2010-08-24

申请号：US12536631

申请日：2009-08-06

申请人： Kei Watanabe ,  Akifumi Gawase ,  Kenichi Otsuka

发明人： Kei Watanabe ,  Akifumi Gawase ,  Kenichi Otsuka

IPC分类号： H01L21/76

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/76835

摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having a wiring provided therein; etching the insulating film, or, etching the insulating film and the interlayer sacrificial film to form a trench reaching the interlayer sacrificial film; forming a gas permeable film in the trench; gasifying and removing the interlayer sacrificial film through the trench and the gas permeable film; and forming a sealing film on the gas permeable film for sealing the vicinity of an opening of the trench after removing the interlayer sacrificial film.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在具有半导体元件的半导体衬底之上形成层间牺牲膜和绝缘膜，所述层间牺牲膜具有设置在其中的布线; 蚀刻绝缘膜，或者蚀刻绝缘膜和层间牺牲膜以形成到达层间牺牲膜的沟槽; 在沟槽中形成透气膜; 通过沟槽和透气膜气化和去除层间牺牲膜; 在透气膜上形成密封膜，用于在除去层间牺牲膜之后密封沟槽的开口附近。