公开(公告)号：US5989998A

公开(公告)日：1999-11-23

申请号：US919271

申请日：1997-08-28

申请人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

发明人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

IPC分类号： C23C16/26 ,  C23C16/30 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/02126 ,  C23C16/26 ,  C23C16/30 ,  C23C16/401 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/31051 ,  H01L21/31058

摘要： A material containing, as a main component, an organic silicon compound represented by the following general formula:R.sup.1.sub.x Si(OR.sup.2).sub.4-x(where R.sup.1 is a phenyl group or a vinyl group; R.sup.2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R.sup.1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R.sup.1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

摘要翻译： 作为主成分的含有以下通式表示的有机硅化合物的材料：R1xSi（OR2）4-x（其中R1为苯基或乙烯基; R2为烷基; x为整数） 1〜3）进行等离子体聚合或与氧化剂反应，形成由含有有机成分的氧化硅膜构成的层间绝缘膜。 作为R 1为苯基的有机硅化合物，可以列举苯基三甲氧基硅烷或二苯基二甲氧基硅烷。 作为R 1为乙烯基的有机硅化合物，可列举乙烯基三甲氧基硅烷或二乙烯基二甲氧基硅烷。

公开(公告)号：US07060323B2

公开(公告)日：2006-06-13

申请号：US10400806

申请日：2003-03-28

申请人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

发明人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

IPC分类号： C23C16/30 ,  C23C16/42 ,  C23C16/40 ,  C23C16/509 ,  H01L21/473

CPC分类号： H01L21/02126 ,  C23C16/26 ,  C23C16/30 ,  C23C16/401 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807

摘要： A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

摘要翻译： 含有以下通式表示的有机硅化合物作为主要成分的材料：<？in-line-formula description =“In-line formula”end =“lead”？> R 1 x-in-line-formula description =“In-line Formulas”end =“tail（”）“ （其中R 1为苯基或乙烯基; R 2为烷基，x为1〜3的整数）为 进行等离子体聚合或与氧化剂反应以形成由含有有机成分的氧化硅膜构成的层间绝缘膜。 作为其中R 1为苯基的有机硅化合物，可以列出苯基三甲氧基硅烷或二苯基二甲氧基硅烷。 作为其中R 1为乙烯基的有机硅化合物，可以列出乙烯基三甲氧基硅烷或二乙烯基二甲氧基硅烷。

公开(公告)号：US06558756B2

公开(公告)日：2003-05-06

申请号：US09900142

申请日：2001-07-09

申请人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

发明人： Gaku Sugahara ,  Nobuo Aoi ,  Koji Arai ,  Kazuyuki Sawada

IPC分类号： C08J718

CPC分类号： H01L21/02126 ,  C23C16/26 ,  C23C16/30 ,  C23C16/401 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807

摘要： A material containing, as a main component, an organic silicon compound represented by the following general formula: R1xSi(OR2)4-x (where R1 is a phenyl group or a vinyl group; R2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

摘要翻译： 含有以下通式表示的有机硅化合物作为主要成分的材料（其中R1为苯基或乙烯基，R2为烷基，x为1〜3的整数） 进行等离子体聚合或与氧化剂反应以形成由含有有机成分的氧化硅膜构成的层间绝缘膜。 作为R 1为苯基的有机硅化合物，可以列举苯基三甲氧基硅烷或二苯基二甲氧基硅烷。 作为R 1为乙烯基的有机硅化合物，可列举乙烯基三甲氧基硅烷或二乙烯基二甲氧基硅烷。

公开(公告)号：US5877080A

公开(公告)日：1999-03-02

申请号：US777873

申请日：1996-12-31

申请人： Nobuo Aoi ,  Gaku Sugahara

发明人： Nobuo Aoi ,  Gaku Sugahara

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/441

CPC分类号： H01L21/76801 ,  H01L21/316 ,  H01L21/76828

摘要： A method of manufacturing a semiconductor device comprises a lower-metallization-layer forming step of forming a lower metallization layer on a semiconductor substrate, an insulating-film forming step of forming an interlayer insulating film on said lower metallization layer, and an upper-metallization-layer forming step of forming an upper metallization layer on said interlayer insulating film. The insulating-film forming step includes the step of mixing a solution of a particulate silanol condensate having a fluorine-silicon bond and a solution of a particulate silanol condensate having an organic group-silicon bond to prepare a solution mixture, which is applied onto the semiconductor substrate formed with the lower metallization layer and thermally treated to form the foregoing interlayer insulating film.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成下金属化层的下金属化层形成步骤，在所述下金属化层上形成层间绝缘膜的绝缘膜形成步骤和上金属化层 在所述层间绝缘膜上形成上金属化层的层形成步骤。 绝缘膜形成步骤包括将具有氟 - 硅键的颗粒状硅烷醇缩合物和具有有机基团 - 硅键的硅烷醇缩合物的溶液的溶液混合以制备溶液混合物的步骤， 形成有下金属化层的半导体衬底并进行热处理以形成上述层间绝缘膜。

公开(公告)号：US20100087059A1

公开(公告)日：2010-04-08

申请号：US12632397

申请日：2009-12-07

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： H01L21/768

CPC分类号： H01L21/76859 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883

摘要： After a groove is formed in an insulating layer formed on a semiconductor substrate, a barrier metal layer is formed on the insulating layer by an ALD process so as to cover the side walls and bottom of the groove, and an impurity layer is formed in or on the surface of the barrier metal layer by an ion implantation process or by an ALD process. Thereafter, the barrier metal layer and the impurity layer are alloyed, and then an inlaid interconnect layer, which is composed of a Cu seed layer and a Cu plating layer, is formed in the groove. Then, an impurity element in the alloyed barrier metal layer is thermally diffused into the inlaid interconnect layer.

摘要翻译： 在形成在半导体衬底上的绝缘层中形成沟槽之后，通过ALD工艺在绝缘层上形成阻挡金属层，以覆盖沟槽的侧壁和底部，并且在其中形成杂质层 通过离子注入工艺或通过ALD工艺在阻挡金属层的表面上。 此后，将阻挡金属层和杂质层合金化，然后在沟槽中形成由Cu籽晶层和Cu镀层构成的嵌入式互连层。 然后，合金化阻挡金属层中的杂质元素被热扩散到镶嵌互连层中。

公开(公告)号：US20090298298A1

公开(公告)日：2009-12-03

申请号：US11917375

申请日：2006-03-13

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： H01L21/312 ,  C08L83/04 ,  C07F7/18

CPC分类号： H01L21/02126 ,  C08G77/045 ,  C08G77/70 ,  C08L83/04 ,  C09D183/04 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121

摘要： In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R1R2)—OR3 (wherein R1 and R2 are the same as or different from each other and are a methyl group, an ethyl group or a propyl group, and R3 is the same as or different from R1 and R2 and is a methyl group, an ethyl group, a propyl group or a phenyl group) is used as a raw material.

摘要翻译： 在通过等离子体CVD形成层间绝缘膜的方法中，包含一个或多个硅原子的有机硅氧烷化合物各自具有至少三个以上的由通式-O-Si（R 1 R 2）-OR 3表示的单元（其中R 1 和R 2相同或不同，为甲基，乙基或丙基，R 3与R 1和R 2相同或不同，为甲基，乙基，丙基 或苯基）作为原料。

公开(公告)号：US20080090094A1

公开(公告)日：2008-04-17

申请号：US12000124

申请日：2007-12-10

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： B32B3/10 ,  B32B5/14

CPC分类号： H01L21/02126 ,  C08G77/50 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/12361 ,  Y10T428/12542 ,  Y10T428/31663

摘要： An interlayer dielectric film is made from an organic/inorganic hybrid film. The organic/inorganic hybrid film has a main chain in which a first site of siloxane and a second site of an organic molecule are alternately bonded to each other.

摘要翻译： 层间绝缘膜由有机/无机混合膜制成。 有机/无机杂化膜具有其中硅氧烷的第一部位和有机分子的第二位置彼此交替键合的主链。

公开(公告)号：US20050245097A1

公开(公告)日：2005-11-03

申请号：US11177569

申请日：2005-07-11

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： C08G73/10 ,  C08J5/18 ,  H01L21/312 ,  A61K9/50 ,  H01L21/31

CPC分类号： C08J5/18 ,  C08G73/10 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/312

摘要： A Lewis acid-base reaction is caused, in a solution, between a first monomer corresponding to a Lewis acid and a second monomer corresponding to a Lewis base, so as to generate a monomer adduct in which the first monomer and the second monomer are bonded to each other through weak electric interaction. Next, the solution including the monomer adduct is applied on a substrate so as to form a supramolecular solid thin film made of the monomer adduct. Then, the supramolecular solid thin film is heated so as to cause a polymerization reaction between the first monomer and the second monomer within the supramolecular solid thin film, thereby forming a polymer thin film.

公开(公告)号：US5084125A

公开(公告)日：1992-01-28

申请号：US579415

申请日：1990-09-10

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31 ,  H01L21/677

CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32458 ,  H01J37/32862 ,  H01L21/67745 ,  H01J2237/022 ,  H01J2237/16 ,  Y10S156/916

摘要： A semiconductor substrate production in which the treatment of semiconductor substrates and the removal of deposits previously formed on the used wall portion are simultaneously performed, so that at least two wall portions alternately constitute the substrate treating chamber after cleaning, thereby continuing the production of semiconductor substrates without breaks for the removal of detrimental deposits.

摘要翻译： 同时执行半导体基板的处理和先前在二次壁部分上形成的沉积物的去除的半导体基板制造，使得至少两个壁部分在清洁之后交替地构成基板处理室，从而继续生产半导体基板 没有休息去除有害的存款。

公开(公告)号：US07960489B2

公开(公告)日：2011-06-14

申请号：US11798218

申请日：2007-05-11

申请人： Nobuo Aoi

发明人： Nobuo Aoi

IPC分类号： C08F138/02 ,  C08F238/02 ,  C08F38/02

CPC分类号： C09D4/00 ,  Y10T428/31909 ,  Y10T428/31931 ,  C08F238/00

摘要： The interlayer insulating film of this invention is composed of a polymer in which a first monomer having four substituted acetylenyl groups and polymerizable in the three-dimensional direction and a second monomer having two substituted cyclopentanonyl groups and polymerizable in the two-dimensional direction are three-dimensionally polymerized.

摘要翻译： 本发明的层间绝缘膜由聚合物组成，其中具有四个取代的乙炔基并且在三维方向上可聚合的第一单体和具有两个取代的环戊烷基并且在二维方向可聚合的第二单体是三元共聚物， 二维聚合。