公开(公告)号：US07784669B2

公开(公告)日：2010-08-31

申请号：US12536122

申请日：2009-08-05

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US07703661B2

公开(公告)日：2010-04-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduced or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以痕量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷却温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。

公开(公告)号：US20080290142A1

公开(公告)日：2008-11-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24 ,  B23K101/36 ,  B23K31/02

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US08493746B2

公开(公告)日：2013-07-23

申请号：US12704592

申请日：2010-02-12

申请人： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

发明人： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

IPC分类号： H05K7/00 ,  H05K1/03 ,  H05K1/11 ,  H05K7/10 ,  H01L23/48

CPC分类号： H01B1/02 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3602 ,  B82Y30/00 ,  C22C13/00 ,  H01B13/00 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0209 ,  H05K2201/0257 ,  Y10T29/49117 ,  H01L2924/00

摘要： In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

摘要翻译： 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。

公开(公告)号：US20100200271A1

公开(公告)日：2010-08-12

申请号：US12704592

申请日：2010-02-12

申请人： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S.N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

发明人： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S.N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

IPC分类号： H01B5/00 ,  H01R43/00

CPC分类号： H01B1/02 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3602 ,  B82Y30/00 ,  C22C13/00 ,  H01B13/00 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0209 ,  H05K2201/0257 ,  Y10T29/49117 ,  H01L2924/00

摘要： In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

摘要翻译： 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20100062597A1

公开(公告)日：2010-03-11

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/60

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US09111816B2

公开(公告)日：2015-08-18

申请号：US13431609

申请日：2012-03-27

申请人： Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

发明人： Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC分类号： H01L24/13 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13184 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16235 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/384 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A multi-layer pillar is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.

摘要翻译： 提供多层支柱。 多层柱用作芯片和基板之间的互连。 支柱具有至少一个低强度，高延展性变形区域，其被配置为吸收在芯片组装和热偏移期间施加的力。

公开(公告)号：US09472520B2

公开(公告)日：2016-10-18

申请号：US13590332

申请日：2012-08-21

申请人： Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

发明人： Virendra R. Jadhav ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13013 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13184 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13684 ,  H01L2224/16235 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/384 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.

摘要翻译： 提供了一种多层柱及其制造方法。 多层柱用作芯片和基板之间的互连。 支柱具有至少一个低强度，高延展性变形区域，其被配置为吸收在芯片组装和热偏移期间施加的力。

公开(公告)号：US07952207B2

公开(公告)日：2011-05-31

申请号：US11950431

申请日：2007-12-05

申请人： Virendra R. Jadhav ,  Jayshree Shah ,  Kamalesh K. Srivastava

发明人： Virendra R. Jadhav ,  Jayshree Shah ,  Kamalesh K. Srivastava

IPC分类号： H01L23/52

CPC分类号： H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3452 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/09436 ,  Y02P70/613 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are embodiments of a flip-chip assembly and method using lead-free solder. This assembly incorporates mushroom-plated metal layers that fill and overflow solder resist openings on an organic laminate substrate. The lower portion of metal layer provides structural support to its corresponding solder resist opening. The upper portion (i.e., cap) of each metal layer provides a landing spot for a solder joint between an integrated circuit device and the substrate and, thereby, allows for enhanced solder volume control. The additional structural support, in combination with the enhanced solder volume control, minimizes strain on the resulting solder joints. Additionally, the cap further allows the minimum diameter of the solder joint on the substrate-side of the assembly to be larger than the diameter of the solder resist opening. Thus, the invention decouples C4 reliability concerns from laminate design concerns and, thereby, allows for greater design flexibility.

摘要翻译： 公开了使用无铅焊料的倒装芯片组装和方法的实施例。 该组件包括在有机层压基板上填充和溢出阻焊剂开口的蘑菇镀金属层。 金属层的下部为其相应的抗焊剂开口提供结构支撑。 每个金属层的上部（即盖）为集成电路器件和衬底之间的焊接点提供着陆点，从而允许增强的焊料体积控制。 额外的结构支撑与增强的焊料体积控制相结合，最大限度地减少了所得到的焊点的应变。 此外，帽还允许组件的衬底侧上的焊点的最小直径大于阻焊剂开口的直径。 因此，本发明将C4可靠性问题与层压板设计问题分开，从而允许更大的设计灵活性。