公开(公告)号：US20110034047A1

公开(公告)日：2011-02-10

申请号：US12906690

申请日：2010-10-18

申请人： Gareth Geoffrey HOUGHAM ,  S. Jay CHEY ,  James Patrick DOYLE ,  Xiao Hu LIU ,  Christopher V. JAHNES ,  Paul Alfred LAURO ,  Nancy C. LaBIANCA ,  Michael J. ROOKS

发明人： Gareth Geoffrey HOUGHAM ,  S. Jay CHEY ,  James Patrick DOYLE ,  Xiao Hu LIU ,  Christopher V. JAHNES ,  Paul Alfred LAURO ,  Nancy C. LaBIANCA ,  Michael J. ROOKS

IPC分类号： H01R4/58

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A method for fabricating a negative thermal expanding system device includes coating a wafer with a thermally decomposable polymer, patterning the decomposable polymer into repeating disk patterns, releasing the decomposable polymer from the wafer and forming a sheet of repeating patterned disks, suspending the sheet into a first solution with seeding compounds for electroless decomposition, removing the sheet from the first solution, suspending the sheet into a second solution to electrolessly deposit a first layer material onto the sheet, removing the sheet from the second solution, suspending the sheet into a third solution to deposit a second layer of material having a lower TCE value than the first layer of material, separating the patterned disks from one another, and annealing thermally the patterned disks to decompose the decomposable polymer and creating a cavity in place of the decomposable polymer.

摘要翻译： 一种制造负热膨胀系统装置的方法包括用可热分解的聚合物涂覆晶片，将可分解的聚合物图案化成重复的圆盘图案，将可分解的聚合物从晶片上释放出来并形成一张重复图案的圆盘，将薄片悬挂在 用于无电解分解的接种化合物的第一溶液，从第一溶液中除去片材，将片材悬浮在第二溶液中以将第一层材料无电沉积到片材上，从第二溶液中除去片材，将片材悬浮在第三溶液中 沉积具有比第一层材料低的TCE值的第二层材料，将图案化的盘彼此分离，并对图案化的盘进行热退火以分解可分解聚合物并产生空腔以代替可分解的聚合物。

公开(公告)号：US20120322215A1

公开(公告)日：2012-12-20

申请号：US13593686

申请日：2012-08-24

申请人： Dureseti CHIDAMBARRAO ,  Xiao Hu LIU ,  Lidija SEKARIC

发明人： Dureseti CHIDAMBARRAO ,  Xiao Hu LIU ,  Lidija SEKARIC

IPC分类号： H01L21/8238 ,  B82Y40/00

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845

摘要： An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

摘要翻译： 电子器件包括限定晶体结构且具有长度和厚度tC的导电沟道; 以及与沟道的表面接触的厚度为tg的电介质膜。 此外，膜包括在通道的接触表面上施加压缩力或拉力中的一种的材料，使得沿着通道长度的电荷载流子（电子或空穴）的电迁移率由于压缩或拉伸力而增加 取决于通道长度相对于晶体结构的对准。 给出了在不同晶体管中空穴和电子迁移率增加的芯片的实施例，以及制造这种晶体管或芯片的方法。

公开(公告)号：US20110012176A1

公开(公告)日：2011-01-20

申请号：US12505580

申请日：2009-07-20

申请人： Dureseti CHIDAMBARRAO ,  Xiao Hu LIU ,  Lidija SEKARIC

发明人： Dureseti CHIDAMBARRAO ,  Xiao Hu LIU ,  Lidija SEKARIC

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845

摘要： An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.

摘要翻译： 电子器件包括限定晶体结构且具有长度和厚度tC的导电沟道; 以及与沟道的表面接触的厚度为tg的电介质膜。 此外，膜包括在通道的接触表面上施加压缩力或拉力中的一种的材料，使得沿着通道长度的电荷载流子（电子或空穴）的电迁移率由于压缩或拉伸力而增加 取决于通道长度相对于晶体结构的对准。 给出了在不同晶体管中空穴和电子迁移率增加的芯片的实施例，以及制造这种晶体管或芯片的方法。