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公开(公告)号：US20160122896A1
公开(公告)日：2016-05-05
申请号：US14928740
申请日：2015-10-30
Applicant: General Electric Company
Inventor： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
CPC classification number: C30B11/003 , C30B29/48 , Y10T117/1092
Abstract: A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.
Abstract translation: 提供一种用于生长晶体的系统，其包括坩埚，炉和传热装置。 该坩埚具有第一容积以在其中容纳用于生长晶体的材料。 炉具有安瓿，其构造成将坩埚接纳在安瓿内。 炉子被配置为产生与垂直热梯度组合的横向热分布。 传热装置设置在坩埚下方并且被配置为在坩埚的底部产生晶体生长的前缘。 传热装置包括设置在坩埚下方并沿着坩埚的长度延伸的至少一个细长构件。
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公开(公告)号：US09797061B2
公开(公告)日：2017-10-24
申请号：US14928740
申请日：2015-10-30
Applicant: General Electric Company
Inventor： Arie Shahar , Eliezer Traub , Peter Rusian , Juan Carlos Rojo
CPC classification number: C30B11/003 , C30B29/48 , Y10T117/1092
Abstract: A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.
