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1.发明申请Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm 审中-公开用于制造直径最小为450mm的由半导体芯片制成的半导体晶片的方法以及由直径为450mm的硅组成的半导体晶片公开(公告)号：US20120315428A1
公开(公告)日：2012-12-13
申请号：US13591272
申请日：2012-08-22
申请人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
发明人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
IPC分类号： C01B33/02
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06 , Y10T428/21
摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.
摘要翻译： 硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向 圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。
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2.发明授权Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm 有权由直径为450mm以上的硅构成的半导体晶片的制造方法以及由直径为450mm的硅构成的半导体晶片公开(公告)号：US08357590B2
公开(公告)日：2013-01-22
申请号：US13005584
申请日：2011-01-13
申请人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
发明人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
IPC分类号： H01L21/46
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06 , Y10T428/21
摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.
摘要翻译： 硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向 圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。
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3.发明申请Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm 有权用于制造直径最小为450mm的由半导体芯片制成的半导体晶片的方法以及由直径为450mm的硅组成的半导体晶片公开(公告)号：US20110175202A1
公开(公告)日：2011-07-21
申请号：US13005584
申请日：2011-01-13
申请人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
发明人： Georg Raming , Walter Heuwieser , Andreas Sattler , Alfred Miller
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06 , Y10T428/21
摘要： Silicon semiconductor wafers are produced by: pulling a single crystal with a conical section and an adjoining cylindrical section having a diameter ≧450 mm and a length of ≧800 mm from a melt in a crucible, wherein in pulling the transition from the conical section to the cylindrical section, the pulling rate is at least 1.8 times higher than the average pulling rate during the pulling of the cylindrical section; cooling the growing single crystal with a cooling power of at least 20 kW; feeding heat from the side wall of the crucible to the single crystal, wherein a gap having a height of ≧70 mm is present between a heat shield surrounding the single crystal and the melt surface.
摘要翻译： 硅半导体晶片通过以下步骤制造：将具有锥形截面的单晶和与坩埚中的熔体直径≥450mm和长度≥800mm的相邻的圆柱形部分拉制，其中，从锥形截面向 圆柱形部分的拉伸速度比拉伸圆筒部分的平均拉拔速度高至少1.8倍; 以至少20kW的冷却功率冷却生长中的单晶; 从坩埚的侧壁向单晶供给热量，其中在围绕单晶的隔热罩和熔体表面之间存在高度为≥70mm的间隙。
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