摘要:
A composition of matter and a structure fabricated using the composition. The composition comprising: a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.
摘要:
Oxycarbosilane materials make excellent matrix materials for the formation of porous low-k materials using incorporated pore generators (porogens). The elastic modulus numbers measured for porous samples prepared in this fashion are 3-6 times higher than porous organosilicates prepared using the sacrificial porogen route. The oxycarbosilane materials are used to produce integrated circuits for use in electronics devices. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader quickly to ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the appended issued claims.
摘要:
Oxycarbosilane materials make excellent matrix materials for the formation of porous low-k materials using incorporated pore generators(porogens). The elastic modulus numbers measured for porous samples prepared in this fashion are 3–6 times higher than porous organosilicates prepared using the sacrificial porogen route. The oxycarbosilane materials are used to produce integrated circuits for use in electronics devices.
摘要:
Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.
摘要:
A nanoporous material exhibiting a lamellar structure is disclosed. The material comprises three or more substantially parallel sheets of an organosilicate material, separated by highly porous spacer regions. The distance between the centers of the sheets lies between 1 nm and 50 nm. The highly porous spacer regions may be substantially free of condensed material. For the manufacture of such materials, a process is disclosed in which matrix non-amphiphilic polymeric material and templating polymeric material are dispersed in a solvent, where the templating polymeric material includes a polymeric amphiphilic material. The solvent with the polymeric materials is distributed onto a substrate. Organization is induced in the templating polymeric material. The solvent is removed, leaving the polymeric materials in place. The matrix polymeric material is cured, forming a lamellar structure.
摘要:
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要:
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要:
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要:
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
摘要:
The invention concerns compounds of formula (I), wherein: R1, R2, R3 and R4 represent a hydrogen atom, an alkyl radical comprising 1 to 4 carbon atoms, a phenyl radical optionally substituted by one or several groups selected among vinyl, hydroxy, nitro, amino, bromo, chloro, fluoro, iodo, benzyloxy radicals, alkyl or alkyloxy radicals comprising 1 to 4 carbon atoms optionally substituted by one or several bromo, chloro, fluoro or iodo groups; R5, R6, R7 and R8 represent a hydrogen atom or an alkyl radical comprising 1 to 4 carbon atoms; Ra, Rb, and Rc represent a hydrogen atom, a phenyl radical optionally substituted by one or several groups selected among the vinyl, hydroxy, nitro, amino, bromo, chloro, fluoro, iodo, benzyloxy radicals, alkyl or alkyloxy radicals comprising 1 to 4 carbon atoms, optionally substituted by one or several bromo, chloro, fluoro or iodo groups. The invention also concerns a silica modified by a compound of formula (I); a sole-gel material derived from a compound of formula (I); a mesoporous silica modified by a compound of formula (I). The invention further concerns the use of said materials for selective trapping of carbon monoxide.
摘要翻译:本发明涉及式(I)化合物,其中:R 1,R 2,R 3和R 4 SUB 表示氢原子,含有1至4个碳原子的烷基,任选被一个或多个选自乙烯基,羟基,硝基,氨基,溴,氯,氟,碘,苄氧基,烷基或烷氧基的基团取代的苯基 包含1至4个碳原子的基团,任选被一个或几个溴,氯,氟或碘基取代; R 5,R 6,R 7和R 8表示氢原子或烷基,其包含1〜 4个碳原子; R a,R b和R c表示氢原子,任选地被一个或几个选自乙烯基, 羟基,硝基,氨基,溴,氯,氟,碘,苄氧基,包含1至4个碳原子的烷基或烷氧基,任选被一个或几个溴,氯,氟或碘基取代。 本发明还涉及通过式(I)化合物改性的二氧化硅; 衍生自式(I)化合物的唯一凝胶材料; 由式(I)化合物改性的介孔二氧化硅。 本发明还涉及所述材料用于选择性捕集一氧化碳的用途。