公开(公告)号：US20150131425A9

公开(公告)日：2015-05-14

申请号：US13545688

申请日：2012-07-10

申请人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/126 ,  G11B7/1374 ,  H01S5/065 ,  H01S5/0625 ,  H01S5/026 ,  G11B7/1275 ,  H01S5/34 ,  H01S5/343

CPC分类号： G11B7/126 ,  B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  G11B7/128 ,  G11B2007/00457 ,  H01S5/0261 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/34333

摘要： Provided is a recording apparatus including a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected, an optical separation unit, an objective lens, a light reception element, a pulse detection unit, a reference signal generation unit, a phase comparison unit, a recording signal generation unit, and a control unit.

摘要翻译： 提供了一种记录装置，其包括具有双量子阱分离限制异质结构的自激振荡半导体激光器，并且包括施加负偏置电压的可饱和吸收部分和注入增益电流的增益部分，光学 分离单元，物镜，光接收元件，脉冲检测单元，参考信号生成单元，相位比较单元，记录信号生成单元和控制单元。

公开(公告)号：US20130021891A1

公开(公告)日：2013-01-24

申请号：US13545688

申请日：2012-07-10

申请人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/1374 ,  H01S5/34

CPC分类号： G11B7/126 ,  B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  G11B7/128 ,  G11B2007/00457 ,  H01S5/0261 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/34333

摘要： Provided is a recording apparatus including a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected, an optical separation unit, an objective lens, a light reception element, a pulse detection unit, a reference signal generation unit, a phase comparison unit, a recording signal generation unit, and a control unit.

公开(公告)号：US08472302B2

公开(公告)日：2013-06-25

申请号：US13209714

申请日：2011-08-15

申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/00

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

公开(公告)号：US20120044793A1

公开(公告)日：2012-02-23

申请号：US13209714

申请日：2011-08-15

申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/0045

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

公开(公告)号：US20130100789A9

公开(公告)日：2013-04-25

申请号：US13209714

申请日：2011-08-15

申请人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Takao Miyajima ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/0045

CPC分类号： H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

摘要： A recording device that records information in an optical recording medium includes: a self excited oscillation semiconductor laser including a saturable absorber section to apply a bias voltage and a gain section to inject a gain current, and also emitting a laser light to record the information in the optical recording medium; a reference signal generation unit generating a master clock signal and also supplying an injection signal synchronized with the master clock signal to the gain section of the self excited oscillation semiconductor laser; and a recording signal generation unit generating a recording signal based upon the master clock signal and also applying the recording signal to the saturable absorber section of the self excited oscillation semiconductor laser as the bias voltage.

摘要翻译： 在光记录介质中记录信息的记录装置包括：自激振荡半导体激光器，包括施加偏置电压的可饱和吸收部和注入增益电流的增益部，并且还发射激光以将信息记录在 光记录介质; 参考信号生成单元，生成主时钟信号，并且将与主时钟信号同步的注入信号提供给自激振荡半导体激光器的增益部分; 以及记录信号生成单元，其基于主时钟信号生成记录信号，并且将记录信号施加到自激振荡半导体激光器的可饱和吸收体部分作为偏置电压。

公开(公告)号：US09025631B2

公开(公告)日：2015-05-05

申请号：US14345289

申请日：2012-09-04

申请人： Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe

发明人： Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/50 ,  H01S5/343 ,  H01S5/20 ,  H01S5/32

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/141 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/209 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/166 ,  H01S2301/176

摘要： Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1′, 6×10−7 m

摘要翻译： 提供能够以单一模式发射光束的高输出发光装置。 发光装置包括层叠结构体，其通过在基底基板，第二电极和第一电极上依次层叠第一化合物半导体层，有源层和第二化合物半导体层而构成。 第一化合物半导体层具有从基底依次依次包括第一包层和第一导光层的叠​​层结构，层叠结构体具有由第二化合物半导体层，有源层和 第一导光层的厚度方向的一部分。 假设第一导光层的厚度为t1，构成第一导光层的脊条结构的部分的厚度为t1'，6×10-7m

公开(公告)号：US08575626B2

公开(公告)日：2013-11-05

申请号：US13553380

申请日：2012-07-19

申请人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

发明人： Hideki Watanabe ,  Takao Miyajima ,  Masao Ikeda ,  Hiroyuki Yokoyama ,  Tomoyuki Oki ,  Masaru Kuramoto

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： H01S5/0625 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333

摘要： A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

摘要翻译： 一种制造双相半导体激光器件的方法包括以下步骤：（A）形成叠层结构，其通过在基板上依次层叠第一导电类型的第一化合物半导体层，构成第一导电类型的化合物半导体层 发光区域和可饱和吸收区域;以及第二导电类型的第二化合物半导体层; （B）在第二化合物半导体层上形成带状的第二电极; （C）通过使用所述第二电极作为蚀刻掩模蚀刻所述第二化合物半导体层的至少一部分来形成脊结构; 和（D）在第二电极中形成用于形成分隔槽的抗蚀剂层，然后通过湿蚀刻在第二电极中形成分隔槽，使得分离槽将第二电极分离成第一部分和第二部分。

公开(公告)号：US08483256B2

公开(公告)日：2013-07-09

申请号：US13417998

申请日：2012-03-12

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/08

CPC分类号： H01S5/0602 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/1064 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/166

摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1

摘要翻译： 激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层 由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b） 形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

公开(公告)号：US20110216797A1

公开(公告)日：2011-09-08

申请号：US13035585

申请日：2011-02-25

申请人： Hideki Watanabe ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

发明人： Hideki Watanabe ,  Masaru Kuramoto ,  Takao Miyajima ,  Hiroyuki Yokoyama

IPC分类号： H01S5/343 ,  H01S5/30

CPC分类号： H01S5/3407 ,  H01S5/0601 ,  H01S5/30 ,  H01S5/343

摘要： There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.

摘要翻译： 提供了一种自激振荡半导体激光器件的驱动方法，该器件包括具有第一导电类型并由GaN基化合物半导体构成的第一化合物半导体层，构成发光区域的第三化合物半导体层和第二化合物半导体层， 依次层叠可饱和吸收区域，形成在第二化合物半导体层上的第二电极和与第一化合物半导体层电连接的第一电极。 第二电极被分离为第一部分，以通过经由发射区域将电流传递到第一电极以产生正向偏置状态，以及第二部分，以通过分离槽将电场施加到可饱和吸收区域。 大于在光输出电流特性中发生扭结的当前值的电流将被传递到第二电极的第一部分。

公开(公告)号：US08442079B2

公开(公告)日：2013-05-14

申请号：US13035540

申请日：2011-02-25

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/098

摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。