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公开(公告)号：US6153696A
公开(公告)日：2000-11-28
申请号：US59861
申请日：1993-05-10
申请人： Gregory Breyta , Daniel Joseph Dawson , Moahmoud Mostafa Khojasteh , Ranee Wai-Ling Kwong , Elwood Herbert Macy , David Paul Merritt , Wayne Martin Moreau , Stanley Eugene Perreault , Harbans Singh Sachdev , Robert Lavin Wood , Hiroshi Ito
发明人： Gregory Breyta , Daniel Joseph Dawson , Moahmoud Mostafa Khojasteh , Ranee Wai-Ling Kwong , Elwood Herbert Macy , David Paul Merritt , Wayne Martin Moreau , Stanley Eugene Perreault , Harbans Singh Sachdev , Robert Lavin Wood , Hiroshi Ito
摘要： A process for the stoichiometric carbonation of a hydroxyaromatic material is provided which comprises the steps of (a) mixing together in a reaction vessel (1) a hydroxyaromatic material, (2) a sufficient amount of a dialkyl dicarbonate to give the desired degree of substitution, (3) a catalytic amount of an unhindered tertiary amine, and (4) a solvent, (b) stirring the reaction mixture, (c) precipitating the alkyl carbonate of the hydroxyaromatic material, and (d) recovering the alkyl carbonate of the hydroxyaromatic material.
摘要翻译： 提供了一种用于羟基芳族化合物的化学计量碳酸化的方法，其包括以下步骤：（a）在反应容器（1）中将羟基芳族化合物混合在一起，（2）足够量的二碳酸二烷基酯以产生所需的取代度 ，（3）催化量的不受阻碍的叔胺，和（4）溶剂，（b）搅拌反应混合物，（c）沉淀羟基芳族物质的碳酸烷基酯，和（d）回收碳酸烷基酯 羟基芳族化合物。
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2.发明授权公开(公告)号：US06543617B2
公开(公告)日：2003-04-08
申请号：US09802471
申请日：2001-03-09
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65D8500
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitvity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译： 本发明包括一个包装的涂层工件。 包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件 周没有显着损失敏感性，分辨率或性能。 本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。
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3.发明授权公开(公告)号：US07168224B2
公开(公告)日：2007-01-30
申请号：US10295595
申请日：2002-11-15
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65B29/00
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译： 本发明包括一个包装的涂层工件。 包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件 周没有明显的灵敏度，分辨率或性能的损失。 本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。
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4.发明授权公开(公告)号：US08236476B2
公开(公告)日：2012-08-07
申请号：US11970761
申请日：2008-01-08
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译： 提供了一种方法和组合物。 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。
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公开(公告)号：US08021828B2
公开(公告)日：2011-09-20
申请号：US12034971
申请日：2008-02-21
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F7/0392 , G03F7/0397
摘要： A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one phenyl or phenolic moiety, is formed directly onto the first layer. The second layer is patternwise imaged, resulting in exposing at least one first portion. The first portion is removed, revealing at least one first region of the first layer. A second portion of the second layer remains forming a structure having opaque regions. The structure and first region are exposed. The opaque regions shield from radiation at least one second region of the first layer, resulting in producing acid in the first region and in the structure. The structure and base-soluble regions of the first layer are removed. A structure is also described.
摘要翻译： 一种结构和光刻法。 该方法包括形成包含第一聚合物和第一光敏酸发生剂的第一光致抗蚀剂的第一层。 包括具有至少一个苯基或酚部分的第二聚合物的第二光致抗蚀剂层直接形成在第一层上。 第二层被图案化成像，导致暴露至少一个第一部分。 去除第一部分，露出第一层的至少一个第一区域。 第二层的第二部分保持形成具有不透明区域的结构。 结构和第一区域被暴露。 不透明区域从第一层的至少一个第二区域的辐射屏蔽，导致在第一区域和结构中产生酸。 去除第一层的结构和碱溶性区域。 还描述了一种结构。
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6.发明授权Method and structure for reworking antireflective coating over semiconductor substrate 有权在半导体衬底上重新加工抗反射涂层的方法和结构公开(公告)号：US08835307B2
公开(公告)日：2014-09-16
申请号：US13468232
申请日：2012-05-10
IPC分类号： H01L33/44 , H01L21/311 , H01L21/027 , G03F7/42 , G03F7/09 , H01L51/00
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译： 一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。 该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案， 并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。 该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。
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公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。
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公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译： 提供了组合物。 组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸， 碱的第二量少于第二量的酸。 光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。
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公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译： 一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。
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10.发明申请METHOD AND STRUCTURE FOR REWORKING ANTIREFLECTIVE COATING OVER SEMICONDUCTOR SUBSTRATE 审中-公开用于在半导体衬底上重新制造抗反射涂层的方法和结构公开(公告)号：US20120205786A1
公开(公告)日：2012-08-16
申请号：US13455505
申请日：2012-04-25
IPC分类号： H01L23/28
CPC分类号： H01L21/31138 , G03F7/091 , G03F7/422 , H01L21/0276 , H01L21/31144
摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.
摘要翻译： 一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。 该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案， 并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。 该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。
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