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1.发明授权Method for using compositions containing fluorocarbinols in lithographic processes 失效在光刻工艺中使用含有氟代甲醇的组合物的方法公开(公告)号：US07781157B2
公开(公告)日：2010-08-24
申请号：US11495038
申请日：2006-07-28
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.
摘要翻译： 本发明涉及一种在衬底上产生光刻胶图像的方法。 该方法包括用包含含氟甲醇单体的聚合物的膜涂覆基材; 将膜成像曝光于辐射; 将膜加热至约90℃或低于约90℃的温度并显影图像。 本发明还涉及一种在基材上产生光致抗蚀剂图像的方法，其中使用含有氟甲醇单体的聚合物作为保护性面漆。
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2.发明申请Method for Using Compositions Containing Fluorocarbinols in Lithographic Processes 有权在平版印刷方法中使用含有氟代甲醇的组合物的方法公开(公告)号：US20100239985A1
公开(公告)日：2010-09-23
申请号：US12794208
申请日：2010-06-04
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.
摘要翻译： 本发明涉及一种在衬底上产生光刻胶图像的方法。 该方法包括用包含含氟甲醇单体的聚合物的膜涂覆基材; 将膜成像曝光于辐射; 将膜加热至约90℃或低于约90℃的温度并显影图像。 本发明还涉及一种在基材上产生光致抗蚀剂图像的方法，其中使用含有氟甲醇单体的聚合物作为保护性面漆。
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3.发明申请Method for using compositions containing fluorocarbinols in lithographic processes 失效在光刻工艺中使用含有氟代甲醇的组合物的方法公开(公告)号：US20080026317A1
公开(公告)日：2008-01-31
申请号：US11495038
申请日：2006-07-28
IPC分类号： G03C1/00
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.
摘要翻译： 本发明涉及一种在衬底上产生光刻胶图像的方法。 该方法包括用包含含氟甲醇单体的聚合物的膜涂覆基材; 将膜成像曝光于辐射; 将膜加热至约90℃或低于约90℃的温度并显影图像。 本发明还涉及一种在基材上产生光致抗蚀剂图像的方法，其中使用含有氟甲醇单体的聚合物作为保护性面漆。
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4.发明授权Method for using compositions containing fluorocarbinols in lithographic processes 有权在光刻工艺中使用含有氟代甲醇的组合物的方法公开(公告)号：US08124327B2
公开(公告)日：2012-02-28
申请号：US12794208
申请日：2010-06-04
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： The present invention involves a method for generating a photoresist image on a substrate. The method comprises coating a substrate with a film comprising a polymer comprising fluorocarbinol monomers; imagewise exposing the film to radiation; heating the film to a temperature of, at, or below about 90° C. and developing the image. The present invention also relates to a method for generating a photoresist image on a substrate where a polymer comprising fluorocarbinol monomers is used as a protective top coat.
摘要翻译： 本发明涉及一种在衬底上产生光刻胶图像的方法。 该方法包括用包含含氟甲醇单体的聚合物的膜涂覆基材; 将膜成像曝光于辐射; 将膜加热至约90℃或低于约90℃的温度并显影图像。 本发明还涉及一种在基材上产生光致抗蚀剂图像的方法，其中使用含有氟甲醇单体的聚合物作为保护面漆。
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公开(公告)号：US08945808B2
公开(公告)日：2015-02-03
申请号：US11380731
申请日：2006-04-28
申请人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
发明人： Robert Allen David , Phillip Joe Brock , Carl E Larson , Daniel Paul Sanders , Ratnam Sooriyakumaran , Linda Karin Sundberg , Hoa D Truong , Gregory Michael Wallraff
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/0392 , G03F7/0757
摘要： Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
摘要翻译： 公开了可用于浸没式光刻中而不使用另外的顶涂层的抗蚀剂组合物。 抗蚀剂组合物包含光致抗蚀剂聚合物，至少一种光致酸产生剂，溶剂; 和自 - 面漆抗蚀剂添加剂。 还公开了使用抗蚀剂组合物在衬底上形成图案化材料层的方法。
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6.发明授权公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译： 形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。 显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。 显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。 将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。 在去除有机浇注溶剂时，材料自组装，从而形成层状结构。
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7.发明授权Photoresist compositions and methods of use in high index immersion lithography 有权光刻胶组合物和高指数浸渍光刻中使用的方法公开(公告)号：US09250529B2
公开(公告)日：2016-02-02
申请号：US13543852
申请日：2012-07-08
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.
摘要翻译： 本发明涉及包含光致抗蚀剂聚合物和含氟聚合物的组合物。 在一个实施方案中，含氟聚合物包含具有选自脂环族双六氟异丙醇和芳基双 - 六氟异丙醇的侧基的第一单体，优选选自氟化苯乙烯和氟化乙烯基醚的第二单体。 本发明组合物具有改进的与浸渍光刻中使用的高折射率烃流体的后退接触角，从而提供浸没式光刻中的改进的性能。
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公开(公告)号：US09223209B2
公开(公告)日：2015-12-29
申请号：US12709346
申请日：2010-02-19
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： Provided are sulfonamide-containing photoresist compositions for use in lithographic processes that have improved properties for high resolution, low blur imaging. Also provided are alcohol-soluble photoresists for resist-on-resist applications. The sulfonamide-containing photoresist compositions of the present invention include positive-tone photoresist compositions that have sulfonamide-substituted repeat units with branched linking group as shown in Formula (I):
摘要翻译： 提供了用于光刻工艺的含磺酰胺的光致抗蚀剂组合物，其具有用于高分辨率，低模糊成像的改进的性质。 还提供了用于抗蚀剂抗蚀剂应用的醇溶性光致抗蚀剂。 本发明的含磺酰胺的光致抗蚀剂组合物包括具有如式（I）所示的具有支链连接基团的磺酰胺取代的重复单元的正色调光致抗蚀剂组合物：
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9.发明授权公开(公告)号：US08828493B2
公开(公告)日：2014-09-09
申请号：US12641987
申请日：2009-12-18
CPC分类号： G03F7/0392 , G03F7/091 , G03F7/165 , G03F7/2041 , G03F7/40
摘要： Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.
摘要翻译： 公开了用于形成包括自组装材料的层状结构的方法。 光化学，热学和/或化学处理初始图案化的光致抗蚀剂层以形成包含非交联处理的光致抗蚀剂的经处理的图案化光致抗蚀剂层。 经处理的光致抗蚀剂不溶于适于铸造能够自组装的材料的有机溶剂中。 将包含溶解在有机溶剂中的能够自组装的材料的溶液浇铸在处理层上，并除去有机溶剂。 允许铸造材料通过任选的加热和/或退火自组装，从而形成包括自组装材料的层状结构。 可以使用碱性水溶液和/或第二有机溶剂除去经处理的光致抗蚀剂。
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10.发明授权Cyclic carbonyl compounds with pendant carbonate groups, preparations thereof, and polymers therefrom 失效具有侧碳酸酯基团的环状羰基化合物，其制备物及其聚合物公开(公告)号：US08207351B2
公开(公告)日：2012-06-26
申请号：US12770877
申请日：2010-04-30
IPC分类号： C07D263/00
CPC分类号： C07D319/04 , C07D317/36 , C08G64/0233 , C08G64/30 , Y02P20/582
摘要： A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl carbonate group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl carbonate group. Using a suitable nucleophile, the pendant pentafluorophenyl carbonate group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.
摘要翻译： 公开了一种制备包含活性五氟苯基碳酸酯基团的环状羰基化合物的一锅法。 环状羰基化合物可以通过开环方法聚合以形成包含包含侧链五氟苯基碳酸酯基团的重复单元的ROP聚合物。 使用合适的亲核试剂，可以在开环聚合之前或之后将五氟苯基碳酸五酯基团选择性地转化成多种其它官能团。
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