摘要:
Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.
摘要翻译:提供了几个中等紫外光酸产生剂(PAG),化学放大光抗蚀剂(CAMP)和改进嵌套到隔离线偏压的方法。 类似地,也可以提高照相速度。 与传统的中等紫外线PAG不同,本发明的PAG化合物,抗蚀剂组合物和方法不需要中等紫外线敏化剂。 具体地说,提供了能够承受中等紫外线辐射,特别是I线的发色团的PAG,并且适合用于光速为500mJ / cm 2以下但优选为200mJ / cm 2的化学放大型光致抗蚀剂的PAG, cm2以下。 例如,PAG可以是锍或碘鎓盐,例如蒽基,丁基,甲基锍三氟甲磺酸酯和双(4-叔丁基苯基)碘9,10-二甲氧基蒽磺酸盐。 形成PAG的一部分的发色团可以选自多芳族烃,例如氯仿,芘,荧蒽,蒽,二苯甲酮,噻吨酮,蒽和菲,但优选为蒽。
摘要:
A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.
摘要:
A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.
摘要:
High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.
摘要:
A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.
摘要:
A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.