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    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors
    5.
    发明申请
    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors 审中-公开
    超薄电介质及其在有机场效应晶体管中的应用

    公开(公告)号：US20080290337A1

    公开(公告)日：2008-11-27

    申请号：US11568791

    申请日：2005-11-17

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

    摘要翻译： 公开了一种具有基板，源电极，漏电极和栅电极以及有机半导体材料的有机场效应晶体管。 在栅电极和有机半导体材料之间布置的是从具有锚定基团，连接基团，头基团和脂族取向基团的有机化合物的自组装单层获得的电介质层（栅极电介质），所述锚 基团，连接基团，头基团和脂族取代基团按所述顺序彼此组合。

    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS
    9.
    发明申请
    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS 审中-公开
    传感器有机场效应晶体管

    公开(公告)号：US20090066345A1

    公开(公告)日：2009-03-12

    申请号：US10599470

    申请日：2005-03-30

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    IPC分类号： G01R27/26 ,  H01L51/05

    CPC分类号： G06K9/00053

    摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

    摘要翻译： 公开了一种基于施加在衬底上的有机场效应晶体管的力传感器。 在一个实施例中，作用在晶体管上的机械力引起其源极 - 漏极电压或其源极 - 漏极电流的变化，其对应于所述力，并且在每种情况下都可以被检测为作用力的测量量， 使用这种力传感器的基于压力的传感器，使用这种类型的多个力传感器的一维或二维位置传感器，以及使用多个这样的力传感器的指纹传感器。