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    Dual-Ended Optical Fiber Pathway
    3.
    发明申请
    Dual-Ended Optical Fiber Pathway 审中-公开
    双端光纤通道

    公开(公告)号：US20160139337A1

    公开(公告)日：2016-05-19

    申请号：US14231000

    申请日：2014-03-31

    申请人： Michael J. Hines ,  Jie Li ,  Xiaoguang Sun ,  Adam Hokansson ,  Robert J. Blakley ,  Robert Mattern, JR.

    发明人： Michael J. Hines ,  Jie Li ,  Xiaoguang Sun ,  Adam Hokansson ,  Robert J. Blakley ,  Robert Mattern, JR.

    IPC分类号： G02B6/26 ,  G01K11/32 ,  G02B6/255 ,  G02B6/02 ,  G02B6/028

    CPC分类号： G02B6/262 ,  G01K11/32 ,  G02B6/02042 ,  G02B6/0281 ,  G02B6/2551

    摘要： In an optical fiber turnaround, first and second optical fiber cores are configured to transmit light bidirectionally along a transmission axis between proximal and distal ends of the first and second optical fiber cores. A reflector component is positioned at the distal ends of the first and second optical fiber cores. The first core, second core, and reflector component are configured to provide a bidirectional routing path, wherein light energy travels from the proximal end of one of the first and second cores towards the reflector component, and travels back from the reflector component along the other of the first and second cores.

    摘要翻译： 在光纤周转中，第一和第二光纤芯被配置为沿第一和第二光纤芯的近端和远端之间的透射轴双向透射光。 反射器部件位于第一和第二光纤芯的远端。 第一核心，第二核心和反射器部件被配置为提供双向路由路径，其中光能量从第一和第二核心之一的近端朝向反射器部件行进，并且沿着另一个从反射器部件返回 的第一和第二芯。

    SYSTEMS AND METHODS FOR OPTICAL RECEIVER DECISION THRESHOLD OPTIMIZATION
    7.
    发明申请
    SYSTEMS AND METHODS FOR OPTICAL RECEIVER DECISION THRESHOLD OPTIMIZATION 有权
    光接收机决策阈值优化的系统与方法

    公开(公告)号：US20090269076A1

    公开(公告)日：2009-10-29

    申请号：US12111719

    申请日：2008-04-29

    申请人： Qingzhong CAI ,  Xiaoguang Sun ,  Gabriel E. Cardona

    发明人： Qingzhong CAI ,  Xiaoguang Sun ,  Gabriel E. Cardona

    IPC分类号： H04B10/06 ,  H04B10/00

    CPC分类号： H04B10/695

    摘要： The present invention provides systems and methods for a receiver threshold optimization loop to provide self-contained automatic adjustment in a compact module, such as a pluggable optical transceiver. The receiver threshold optimization loop utilizes a performance metric associated with the receiver, such as FEC, to optimize performance of the receiver. The receiver is optimized through a change in the receiver threshold responsive to the performance metric. Advantageously, the present invention provides improved receiver performance through a continuous adjustment that is self-contained within the receiver, such as within a pluggable optical transceiver compliant to a multi-source agreement (MSA). The receiver threshold optimization loop can include a fine and a coarse sweep of adjustment from an initial setting.

    摘要翻译： 本发明提供了一种用于接收器阈值优化回路的系统和方法，以在诸如可插拔光收发器之类的紧凑模块中提供自包含的自动调整。 接收机阈值优化循环利用与接收机（例如FEC）相关联的性能度量来优化接收机的性能。 响应于性能指标，通过接收机阈值的变化来优化接收机。 有利地，本发明通过在接收机内自包含的连续调整来提供改进的接收机性能，例如在符合多源协议（MSA）的可插拔光收发器内。 接收器阈值优化环路可以包括从初始设置的精细和粗略的调整扫描。

    II-VI/III-V layered construction on InP substrate
    8.
    发明授权
    II-VI/III-V layered construction on InP substrate 有权
    InP衬底上的II-VI / III-V分层结构

    公开(公告)号：US07119377B2

    公开(公告)日：2006-10-10

    申请号：US11275237

    申请日：2005-12-20

    申请人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

    发明人： Xiaoguang Sun ,  Thomas J. Miller ,  Michael A. Haase

    IPC分类号： H01L33/00

    CPC分类号： H01L31/1032 ,  H01L31/0296 ,  H01L31/03046 ,  H01L31/1035 ,  H01L33/10 ,  H01S5/183 ,  Y02E10/544

    摘要： A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1−xSe where x is between 0.47 and 0.57. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1−yAs where y is between 0.47 and 0.57. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.

    摘要翻译： 提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常，II-VI材料选自ZnSe，CdSe，BeSe，MgSe，ZnTe，CdTe，BeTe，MgTe，ZnS，CdS，BeS，MgS及其合金，更典型地选自CdZnSe， CdMgZnSe，BeZnTe和BeMgZnTe合金，并且最典型的是Cd x 1-x Se Se，其中x在0.47和0.57之间。 通常，III-V材料选自InAs，AlAs，GaAs，InP，AlP，GaP，InSb，AlSb，GaSb及其合金，更典型地选自InP，InAlAs，GaInAs，AlInGaAs 和GaInAsP合金，并且最典型地是InP或In y y 1 y y，其中y在0.47和0.57之间。 在一个实施例中，分层结构形成一个或多个分布式布拉格反射器（DBR）。 另一方面，本发明提供了一种分层结构，其包括：InP衬底和具有95％或更大的反射率的分布式布拉格反射器（DBR），其包括不超过15层的外延半导体材料。 另一方面，本发明提供一种包括根据本发明的分层结构的激光器。 另一方面，本发明提供了一种包括根据本发明的分层结构的光电检测器。

    II-VI MQW VSEL on a heat sink optically pumped by a GaN LD
    9.
    发明授权
    II-VI MQW VSEL on a heat sink optically pumped by a GaN LD 失效
    II-VI MQW VSEL在由GaN LD光学泵浦的散热器上

    公开(公告)号：US08488641B2

    公开(公告)日：2013-07-16

    申请号：US13060554

    申请日：2009-08-18

    申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    IPC分类号： H01S3/14 ,  H01S5/00

    CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

    摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

    摘要翻译： 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。 第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

    SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS
    10.
    发明申请
    SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS 有权
    使用印刷机构的含有底物的底物上的半导体器件

    公开(公告)号：US20120037957A1

    公开(公告)日：2012-02-16

    申请号：US13264509

    申请日：2010-04-30

    申请人： Thomas J. Miller ,  Michael A. Haase ,  Xiaoguang Sun

    发明人： Thomas J. Miller ,  Michael A. Haase ,  Xiaoguang Sun

    IPC分类号： H01L29/06 ,  H01L29/22

    CPC分类号： H01L33/0087 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02469 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/08 ,  H01L33/28 ,  H01L33/502

    摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.

    摘要翻译： 我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。 因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。 我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟 ，以保持良好的设备性能。