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    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS
    1.
    发明申请
    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS 有权
    半导体集成电路测试结构的多个方向扫描

    公开(公告)号：US20080237487A1

    公开(公告)日：2008-10-02

    申请号：US11675013

    申请日：2007-02-14

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    IPC分类号： G21G5/00

    CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    Multiple directional scans of test structures on semiconductor integrated circuits
    3.
    发明授权
    Multiple directional scans of test structures on semiconductor integrated circuits 有权
    半导体集成电路测试结构的多方向扫描

    公开(公告)号：US07656170B2

    公开(公告)日：2010-02-02

    申请号：US11675013

    申请日：2007-02-14

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Padma A. Satya, legal representative ,  Robert Thomas Long ,  David J. Walker

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    IPC分类号： G01R31/02

    CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    Multiple directional scans of test structures on semiconductor integrated circuits
    5.
    发明授权
    Multiple directional scans of test structures on semiconductor integrated circuits 有权
    半导体集成电路测试结构的多方向扫描

    公开(公告)号：US07012439B2

    公开(公告)日：2006-03-14

    申请号：US11058943

    申请日：2005-02-15

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    IPC分类号： G01R31/304

    CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01N23/04 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  Y10S977/849

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    Multiple directional scans of test structures on semiconductor integrated circuits
    6.
    发明授权
    Multiple directional scans of test structures on semiconductor integrated circuits 有权
    半导体集成电路测试结构的多方向扫描

    公开(公告)号：US06566885B1

    公开(公告)日：2003-05-20

    申请号：US09648109

    申请日：2000-08-25

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    IPC分类号： G01R3100

    CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01N23/04 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  Y10S977/849

    摘要： A sample is inspected. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 检查样品。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    Methods and apparatus for optimizing semiconductor inspection tools
    10.
    发明授权
    Methods and apparatus for optimizing semiconductor inspection tools 有权
    优化半导体检测工具的方法和设备

    公开(公告)号：US06433561B1

    公开(公告)日：2002-08-13

    申请号：US09648096

    申请日：2000-08-25

    申请人： Akella V. S. Satya ,  Gustavo A. Pinto ,  Robert Thomas Long ,  Bin-Ming Benjamin Tsai ,  Brian C. Leslie

    发明人： Akella V. S. Satya ,  Gustavo A. Pinto ,  Robert Thomas Long ,  Bin-Ming Benjamin Tsai ,  Brian C. Leslie

    IPC分类号： G01R31308

    CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817

    摘要： Disclosed is a method of inspecting a sample. At least a portion of the sample is illuminated. Signals received from the illuminated portion are detected, and the detected signals are processed to find defects present on the sample. The processing of the detected signals is optimized, at least in part, based upon results obtained from voltage contrast testing. In one implementation, the illumination is an optical illumination. In another embodiment, the processing comprises automated defect classification, and setup of the automated classification is optimized using the results obtained from voltage contrast testing. In another implementation, the results relate to a probability that a feature present on the sample represents an electrical defect.

    摘要翻译： 公开了一种检查样品的方法。 样品的至少一部分被照亮。 检测从照明部分接收到的信号，并且处理检测到的信号以发现样品上存在的缺陷。 检测到的信号的处理被优化，至少部分地基于从电压对比度测试获得的结果。 在一个实施方案中，照明是光学照明。 在另一个实施例中，处理包括自动化缺陷分类，并且使用从电压对比度测试获得的结果来优化自动化分类的建立。 在另一实现中，结果涉及样品上存在的特征表示电缺陷的概率。