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    Temperature insensitive optical receiver
    1.
    发明授权
    Temperature insensitive optical receiver 有权

    公开(公告)号：US11342472B2

    公开(公告)日：2022-05-24

    申请号：US16902135

    申请日：2020-06-15

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

    IPC: H01L21/00 ,  H01L29/861 ,  H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18 ,  H04J14/02

    Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

    INJECTION LOCKED MULTI-WAVELENGTH OPTICAL SOURCE
    2.
    发明申请
    INJECTION LOCKED MULTI-WAVELENGTH OPTICAL SOURCE 有权

    公开(公告)号：US20210088740A1

    公开(公告)日：2021-03-25

    申请号：US16582907

    申请日：2019-09-25

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Di Liang ,  Zhixin Liu

    IPC: G02B6/43 ,  G02B6/42 ,  H01S5/10 ,  H01S5/026 ,  H01S5/065 ,  H01S5/40 ,  G02B6/293 ,  H04B10/50 ,  H04B10/67

    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source configured to emit light having different wavelengths, a waveguide, and an optical coupler configured to couple the emitted light from the first optical source to the waveguide. The optical transmitter further includes an array of two or more second optical sources coupled to the waveguide, each of the two or more second optical sources configured to be injection locked to a different respective wavelength of the emitted light transmitted via the waveguide from the first optical source. In some implementations, the first optical source is a master comb laser and the two or more second optical sources are slave ring lasers.

    Three-terminal optoelectronic component with improved matching of electric field and photocurrent density
    4.
    发明授权
    Three-terminal optoelectronic component with improved matching of electric field and photocurrent density 有权

    公开(公告)号：US10797194B2

    公开(公告)日：2020-10-06

    申请号：US16283224

    申请日：2019-02-22

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

    IPC: H01L31/112 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

    Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

    Multilayer device
    6.
    发明授权
    Multilayer device 有权

    公开(公告)号：US10586847B2

    公开(公告)日：2020-03-10

    申请号：US16065782

    申请日：2016-01-15

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Di Liang ,  Xue Huang

    IPC: H01L29/06 ,  H01L21/762 ,  H01L21/20 ,  H01L21/306 ,  H01L27/07 ,  H01L29/786 ,  H01L29/66 ,  H01L29/20

    Abstract: A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

    Coupling-modulated optical resonator
    7.
    发明授权
    Coupling-modulated optical resonator 有权

    公开(公告)号：US10338416B2

    公开(公告)日：2019-07-02

    申请号：US15027096

    申请日：2013-10-15

    Applicant: Hewlett Packard Enterprise Development LP

    Inventor： Di Liang ,  David A. Fattal

    IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026 ,  G02B6/293 ,  G02B6/00 ,  G02F1/015

    Abstract: Coupling modulation of an optical resonator employs a variable modal index to provide modulation of optical signal coupling. A coupling-modulated optical resonator includes an optical resonator having a coupled portion and a bus waveguide having a modulation section adjacent to and coextensive with and separated by a gap from the coupled portion. The modulation section is to modulate coupling of an optical signal between the optical resonator and the bus waveguide according to a variable difference between a modal index of the bus waveguide modulation section and a modal index of the optical resonator coupled portion.

    Semiconductor devices
    9.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US09846277B1

    公开(公告)日：2017-12-19

    申请号：US15222922

    申请日：2016-07-28

    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

    Inventor： Yingtao Hu ,  Di Liang ,  Raymond G Beausoleil

    IPC: G02B6/00 ,  G02B6/122

    CPC classification number: G02B6/122

    Abstract: Examples herein relate to semiconductor devices having contacts that provide low contact resistance for both p-type and n-type materials. An example semiconductor device includes a semiconductor device layer having at least one of a p-type material or a n-type material. A contact is manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor process. The contact includes a first layer having palladium coupled with a surface of the semiconductor device layer, a conducting second layer coupled with the first layer, and a third layer having germanium coupled with the second conducting layer.

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