Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers
    1.
    发明申请
    Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers 审中-公开
    多区域感应加热用于改善MOCVD和HVPE室中的温度均匀性

    公开(公告)号:US20110259879A1

    公开(公告)日:2011-10-27

    申请号:US13092800

    申请日:2011-04-22

    摘要: Embodiments of the invention generally relate to apparatuses and methods for utilizing a plurality of induction heat sources to uniformly heat a plurality of substrates within a processing chamber. By utilizing multiple heating zones that are each separately powered, the temperature distribution across the susceptor, over which the substrates rotate, may be uniform. The heat sources may be disposed outside of the processing chamber. In one embodiment, a processing chamber is provided which includes a susceptor disposed adjacent a first side of a window, a substrate carrier coupled with the susceptor, an inner inductive heating element disposed adjacent a second side of the window opposite the first side, an outer inductive heating element separate from and encompassing the inner inductive heating element and disposed adjacent to the second side of the window, and a parasitic load ring positioned below the outer inductive heating element.

    摘要翻译: 本发明的实施例一般涉及利用多个感应热源来均匀加热处理室内的多个基板的装置和方法。 通过利用各自分别供电的多​​个加热区,基板旋转的基座上的温度分布可以是均匀的。 热源可以设置在处理室的外部。 在一个实施例中,提供了处理室,其包括邻近窗口的第一侧设置的基座,与基座耦合的基板载体,与第一侧相对的第二侧附近设置的内部感应加热元件, 感应加热元件与内部感应加热元件分离并且包围内部感应加热元件并且邻近窗口的第二侧设置,以及位于外部感应加热元件下方的寄生负载环。

    RADIATION HEATING EFFICIENCY BY INCREASING OPTICAL ABSORPTION OF A SILICON CONTAINING MATERIAL
    2.
    发明申请
    RADIATION HEATING EFFICIENCY BY INCREASING OPTICAL ABSORPTION OF A SILICON CONTAINING MATERIAL 有权
    通过增加光学吸收含硅材料的辐射加热效率

    公开(公告)号:US20110272709A1

    公开(公告)日:2011-11-10

    申请号:US13093584

    申请日:2011-04-25

    IPC分类号: H01L33/60

    CPC分类号: H01L21/67115 H01L21/68771

    摘要: Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.

    摘要翻译: 本发明的实施例通常提供一种用于增加设置在热处理室中的腔室部件的吸收系数的方法和装置。 在一个实施例中,一种方法通常包括提供具有第一表面和第二表面的衬底载体,所述第一表面被配置为支撑衬底并且与第二表面平行且相对,使衬底载体的第二表面经受 使基底载体的第二表面粗糙化的表面处理工艺,其中基底载体含有包含碳化硅的材料,并在基底载体的粗糙化的第二表面上形成含氧化物层。 形成的含氧化物层在接近从用于加热室部件的一个或多个能量源递送的辐射的波长处具有光学吸收特性。

    Radiation heating efficiency by increasing optical absorption of a silicon containing material
    4.
    发明授权
    Radiation heating efficiency by increasing optical absorption of a silicon containing material 有权
    通过增加含硅材料的光吸收来实现辐射加热效率

    公开(公告)号:US08455374B2

    公开(公告)日:2013-06-04

    申请号:US13093584

    申请日:2011-04-25

    IPC分类号: H01L21/00

    CPC分类号: H01L21/67115 H01L21/68771

    摘要: Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.

    摘要翻译: 本发明的实施例通常提供一种用于增加设置在热处理室中的腔室部件的吸收系数的方法和装置。 在一个实施例中,一种方法通常包括提供具有第一表面和第二表面的衬底载体,所述第一表面被配置为支撑衬底并且与第二表面平行且相对,使衬底载体的第二表面经受 使基底载体的第二表面粗糙化的表面处理工艺,其中基底载体含有包含碳化硅的材料,并在基底载体的粗糙化的第二表面上形成含氧化物层。 形成的含氧化物层在接近从用于加热室部件的一个或多个能量源递送的辐射的波长处具有光学吸收特性。

    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE
    7.
    发明申请
    GAS DISTRIBUTION SHOWERHEAD WITH HIGH EMISSIVITY SURFACE 审中-公开
    具有高功率表面的气体分配淋浴

    公开(公告)号:US20120052216A1

    公开(公告)日:2012-03-01

    申请号:US13154060

    申请日:2011-06-06

    IPC分类号: C23C16/48

    摘要: Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

    摘要翻译: 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中,该装置提供一种喷头装置,其包括主体,延伸穿过主体的多个导管,多个导管中的每一个具有延伸到主体的处理表面的开口,以及设置在处理表面上的涂层, 该涂层为约50微米至约200微米厚,并且包括约0.8的发射率系数,约180微英寸至约220微英寸的平均表面粗糙度,以及约15%或更小的孔隙率。