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公开(公告)号：US20240047222A1
公开(公告)日：2024-02-08
申请号：US17642356
申请日：2021-04-22
Applicant: Hitachi High-Tech Corporation
Inventor： Kazunori Shinoda , Hirotaka Hamamura , Kenji Maeda , Kenetsu Yokogawa , Kenji Ishikawa , Masaru Hori
IPC: H01L21/311 , H01L21/02 , H01L21/3065
CPC classification number: H01L21/31122 , H01L21/02183 , H01L21/3065
Abstract: Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.
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公开(公告)号：US11424106B2
公开(公告)日：2022-08-23
申请号：US16463531
申请日：2018-05-28
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Yuki Kondo , Kenetsu Yokogawa , Masahito Mori , Satoshi Une , Kazunori Nakamoto
IPC: H01J37/32 , H01L21/3065 , H05H1/46
Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode. Further, a first position (A1) and a grounding position between the second electrode and the matching device 117 on the power supply path to the second electrode are electrically connected via a resistor 118 having a predetermined value.
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公开(公告)号：US11842885B2
公开(公告)日：2023-12-12
申请号：US17021149
申请日：2020-09-15
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Tooru Aramaki , Kenetsu Yokogawa , Masaru Izawa
IPC: H01J37/32 , H01L21/311
CPC classification number: H01J37/32183 , H01J37/32045 , H01J37/32174 , H01J37/32192 , H01J37/32577 , H01J37/32715 , H01L21/31116
Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.
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公开(公告)号：US20220157576A1
公开(公告)日：2022-05-19
申请号：US16957033
申请日：2019-07-29
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Taku Iwase , Masakazu Isozaki , Kenetsu Yokogawa , Masahito Mori , Junichi Sayama
IPC: H01J37/32
Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.
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公开(公告)号：US10804080B2
公开(公告)日：2020-10-13
申请号：US16111796
申请日：2018-08-24
Applicant: Hitachi High-Tech Corporation
Inventor： Tooru Aramaki , Kenetsu Yokogawa
IPC: H01J37/32 , H01L21/67 , H01L21/3065 , H01L21/683
Abstract: The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.
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公开(公告)号：US10741368B2
公开(公告)日：2020-08-11
申请号：US16110525
申请日：2018-08-23
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Takumi Tandou , Takamasa Ichino , Kenetsu Yokogawa
IPC: H01J37/32 , H01L21/67 , H01L21/683 , H01L21/687
Abstract: A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.
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公开(公告)号：US11915951B2
公开(公告)日：2024-02-27
申请号：US16913010
申请日：2020-06-26
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Tatehito Usui , Naoyuki Kofuji , Yutaka Kouzuma , Tomoyuki Watanabe , Kenetsu Yokogawa , Satoshi Sakai , Masaru Izawa
CPC classification number: H01L21/67248 , C23C16/482 , H01J37/3299 , H01J37/32449 , H01J37/32724 , H01J37/32917 , H01J37/32935 , H01J37/32972 , H01L21/67069 , H01L21/67098 , H01L21/67115 , H01L21/67207 , H01L22/12 , H01L22/20 , H01J2237/2001 , H01J2237/24585 , H01J2237/334
Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.
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公开(公告)号：US20210249233A1
公开(公告)日：2021-08-12
申请号：US16980501
申请日：2019-12-18
Applicant: Hitachi High-Tech Corporation
Inventor： Hiroyuki Kajifusa , Kenetsu Yokogawa , Takao Arase , Masahito Mori
IPC: H01J37/32 , H01L21/311
Abstract: A plasma processing apparatus equipped with an electrode disposed inside a sample deck on which a wafer is mounted, the sample deck being disposed in the lower part within a processing chamber inside a vacuum container, the electrode being supplied with high frequency power during processing of the wafer, a ring-like member electrode made of a conductor disposed to surround the upper surface on the outer peripheral side of the sample deck, a first ring-like cover made of a dielectric body disposed to cover the ring-like member, and a second ring-like cover made of a conductor disposed to cover the first ring-like cover, and a controller that adjusts the magnitude of the high frequency power according to a result of detection of voltage of the high frequency power supplied to the ring-like member during processing of the wafer.
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公开(公告)号：US10825664B2
公开(公告)日：2020-11-03
申请号：US16110081
申请日：2018-08-23
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Tomoyuki Watanabe , Yutaka Kouzuma , Takumi Tandou , Kenetsu Yokogawa , Hiroshi Ito
IPC: H01J37/32 , H01L21/683 , H01L21/67 , H01L21/687 , H01L21/66
Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.
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公开(公告)号：US12237174B2
公开(公告)日：2025-02-25
申请号：US17642356
申请日：2021-04-22
Applicant: Hitachi High-Tech Corporation
Inventor： Kazunori Shinoda , Hirotaka Hamamura , Kenji Maeda , Kenetsu Yokogawa , Kenji Ishikawa , Masaru Hori
IPC: H01L21/311 , H01L21/02 , H01L21/3065
Abstract: Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.
