公开(公告)号：US3884788A

公开(公告)日：1975-05-20

申请号：US39326573

申请日：1973-08-30

Applicant: HONEYWELL INC

Inventor： MACIOLEK RALPH B ,  SKOGMAN RICHARD A ,  SPEERSCHNEIDER CHARLES J

IPC: C30B19/04 ,  C23C15/00 ,  B44D1/14 ,  B44D1/18

CPC classification number: C30B19/04 ,  C30B29/48 ,  Y10S148/017 ,  Y10S148/051 ,  Y10S148/064 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/15 ,  Y10S148/158 ,  Y10S438/974

Abstract: Substrates suitable for epitaxial growth of mercury cadmium telluride are formed by cleaning a surface of the substrate and then depositing a thin layer of cadmium telluride on the cleaned surface.