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公开(公告)号:US08293431B2
公开(公告)日:2012-10-23
申请号:US12761876
申请日:2010-04-16
申请人: Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
发明人: Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
IPC分类号: G03F1/40
摘要: A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.
摘要翻译: 平版印刷掩模包括包括凹槽的第一层,包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上,将第二层图案化以包括封闭这些区段的区段,区域和沟槽状结构,以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层,以在形成第一层中的槽的步骤期间减小第二层内的电位差。
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公开(公告)号:US20100266939A1
公开(公告)日:2010-10-21
申请号:US12761876
申请日:2010-04-16
申请人: Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
发明人: Haiko Rolff , Carla Byloos , Christoph Noelscher , Nicolo Morgana , Roderick Koehle , Molela Moukara , Ralf Neubauer , Rainer Pforr , Dominique Savignac
IPC分类号: G03F1/00
摘要: A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.
摘要翻译: 平版印刷掩模包括包括凹槽的第一层,包含区域的第二层和包围区段的凹槽状结构。 形成第一层和第二层以便减小第二层内的电位差。 形成光刻掩模的方法包括形成第一层和第二层以将第二层设置在第一层上,将第二层图案化以包括封闭这些区段的区段,区域和沟槽状结构,以及在第一层中形成凹槽 层在未被第二层覆盖的部分。 形成第一层和第二层,以在形成第一层中的槽的步骤期间减小第二层内的电位差。
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公开(公告)号:US20080318139A1
公开(公告)日:2008-12-25
申请号:US12144330
申请日:2008-06-23
申请人: Uwe Dersch , Haiko Rolff , Pavel Nesladek
发明人: Uwe Dersch , Haiko Rolff , Pavel Nesladek
IPC分类号: G03F1/00
摘要: Mask blanks of the invention include an absorber layer, an anti-reflective layer disposed over the absorber layer, and a hard mask layer disposed over the anti-reflective layer. The absorber layer is absorbent at an exposure wavelength and is reflective at an inspection wavelength. The inspection wavelength is greater than or equal to the exposure wavelength. The anti-reflective layer is not reflective at the inspection wavelength. None of the main constituents of the hard mask layer has an atomic number greater than 41. The mask blank may be a reflective EUVL mask blank or a transparent mask blank.
摘要翻译: 本发明的掩模毛坯包括吸收层,设置在吸收层上的抗反射层,以及设置在抗反射层上的硬掩模层。 吸收层在曝光波长处是吸收剂,并且在检测波长处是反射性的。 检查波长大于或等于曝光波长。 抗反射层在检测波长下不反射。 硬掩模层的主要成分都不具有大于41的原子序数。掩模毛坯可以是反射型EUVL掩模毛坯或透明掩模毛坯。
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