摘要:
A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要:
A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
摘要:
An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要:
An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
摘要:
A control method against noxious organisms in a field of soybean or corn, which comprises applying one or more PPO-inhibiting compounds selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2,4-(1H,3H)pyrimidinedione to soil or weeds in the field where soybean or corn seeds have been sown or where said seeds are to be sown, said seeds being treated with one or more compounds selected from the group consisting of neonicotinoid compounds, azole compounds, strobilurin compounds and metalaxyl compounds.
摘要:
A plurality of pixels, each including first and second electrodes and an electrolytic solution, are arranged. When a voltage between the first and the second electrodes increases into a precipitation critical value or more, the precipitation of electroplating starts. When the voltage decreases into a value smaller than the deposition overvoltage value, the precipitation ends. A control unit controlling the voltage between the first and second electrodes repeats a subfield operation including a first operation of selectively supplying any of first, a second voltage and third voltages to the plurality of pixels, and a second operation of collectively supplying the second voltage value to the plurality of pixels after the first operation, at least two times or more, to control the gradation of each pixel based on a timing of supplying the third voltage.
摘要:
A semiconductor device has an input/output terminal configured to input test patterns, a plurality of function blocks configured to be driven by power supply voltage supplied through separate power supply lines, an internal bus configured to send and receive at least the test patterns between the function blocks and the input/output terminal, and an input control circuit which is provided corresponding to each of the plurality of function blocks and switches whether to provide the test patterns on the internal bus to the corresponding function block based on a mode setting signal.
摘要:
A herbicidal composition which comprises 1-(2-chloroimidazo[1,2-a]pyridin-3-ylsulfonyl)-3-(4,6-dimethoxypyrimidin-2-yl)urea (imazosulfuron) and a compound represented by the formula (I): (Compound [I]) as active ingredients, wherein the weight ratio of imazosulfuron: Compound [I] is 1:0.1-1:10, has an excellent herbicidal activity for controlling weeds in crop fields or paddy fields, and causes no phytotoxicity against useful plants.
摘要:
The present invention provides a protein which catalyzes the synthesis of a dipeptide different from L-Ala-L-Ala, a process for producing the protein which catalyzes the synthesis of a dipeptide, a process for producing a dipeptide using the protein which catalyzes the synthesis of a dipeptide, and a process for producing the dipeptide using a culture of a microorganism producing the protein which catalyzes the synthesis of a dipeptide or the like as an enzyme source.
摘要:
A reflection type display apparatus includes: a light modulating layer having a first electrode having a light transmitting property on which an electroplating can be deposited, a second electrode disposed, in opposition to the first electrode, on a reflecting plate for reflecting light of a certain wavelength band, and an electrolytic solution containing a metal ion arranged in contact with the first and second electrodes, wherein, according to a density of current at an interface between the first electrode and the electrolytic solution, the light modulating layer controls a light transmitting ratio and a reflection ratio of the electroplating; and a control unit for setting a direction and the density of the current for depositing the electroplating of several colors.