公开(公告)号：US20110133854A1

公开(公告)日：2011-06-09

申请号：US13057493

申请日：2009-04-03

申请人： Hak Beom Moon ,  Jin Hyung Cho ,  Suc Hyun Bang ,  Cheol Hwan Kim ,  Yoon Hyung Jang

发明人： Hak Beom Moon ,  Jin Hyung Cho ,  Suc Hyun Bang ,  Cheol Hwan Kim ,  Yoon Hyung Jang

IPC分类号： H03H7/00 ,  C23C28/00

CPC分类号： H01C7/108 ,  H01C7/10 ,  H01C7/12 ,  Y10S977/932 ,  Y10T29/41

摘要： The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external environment; and a seventh step for forming an external electrode on both sides of the substrate in which the protective film layer is formed.

摘要翻译： 根据本发明的瞬时脉冲滤波器，其可能导致半导体器件的故障或短寿命，使用铝阳极氧化制成，包括：第一步骤，用于在上部形成铝薄膜层 绝缘体基板; 通过阳极氧化氧化铝薄膜层来形成具有孔的氧化铝薄膜层的第二步骤; 第三步骤，用于在用于填充孔的铝薄膜层的上侧上沉积金属材料; 第四步，通过除去除了孔之外沉积的金属材料，在氧化铝薄膜层的内部形成纳米棒; 在具有纳米棒的氧化铝薄膜层的上侧形成内部电极的第五步骤; 为了保护氧化铝薄膜层和内部电极免受外部环境的影响，在其上侧形成保护膜层的第六步骤; 以及在其上形成有保护膜层的基板的两侧上形成外部电极的第七步骤。

公开(公告)号：US08129745B2

公开(公告)日：2012-03-06

申请号：US13057493

申请日：2009-04-03

申请人： Hak Beom Moon ,  Jin Hyung Cho ,  Suc Hyun Bang ,  Cheol Hwan Kim ,  Yoon Hyung Jang

发明人： Hak Beom Moon ,  Jin Hyung Cho ,  Suc Hyun Bang ,  Cheol Hwan Kim ,  Yoon Hyung Jang

IPC分类号： H01L21/00

CPC分类号： H01C7/108 ,  H01C7/10 ,  H01C7/12 ,  Y10S977/932 ,  Y10T29/41

摘要： The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side of an insulator substrate; a second step for forming an aluminum oxide thin film layer having a pore by oxidizing the aluminum thin film layer by means of an anodic oxidation; a third step for depositing a metallic material on an upper side of the aluminum thin film layer for filling the pore; a fourth step for forming a nano rod in the interior of the aluminum oxide thin film layer by eliminating the metallic material deposited except in the pore; a fifth step for forming an internal electrode on an upper side of the aluminum oxide thin film layer having the nano rod; a sixth step for forming a protective film layer on an upper side of the same in order to protect the aluminum oxide thin film layer and the internal electrode from the external environment; and a seventh step for forming an external electrode on both sides of the substrate in which the protective film layer is formed.

摘要翻译： 根据本发明的瞬时脉冲滤波器，其可能导致半导体器件的故障或短寿命，使用铝阳极氧化制成，包括：第一步骤，用于在上部形成铝薄膜层 绝缘体基板; 通过阳极氧化氧化铝薄膜层来形成具有孔的氧化铝薄膜层的第二步骤; 第三步骤，用于在用于填充孔的铝薄膜层的上侧上沉积金属材料; 第四步，通过除去除了孔之外沉积的金属材料，在氧化铝薄膜层的内部形成纳米棒; 在具有纳米棒的氧化铝薄膜层的上侧形成内部电极的第五步骤; 为了保护氧化铝薄膜层和内部电极免受外部环境的影响，在其上侧形成保护膜层的第六步骤; 以及在其上形成有保护膜层的基板的两侧上形成外部电极的第七步骤。