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    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
    4.
    发明授权
    Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion 失效
    具有径向向上倾斜天花板的薄膜处理等离子体反应器室，用于促进径向向外扩散

    公开(公告)号：US6076482A

    公开(公告)日：2000-06-20

    申请号：US937347

    申请日：1997-09-20

    申请人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    发明人： Ji Ding ,  James Carducci ,  Hongching Shan ,  Siamak Salimian ,  Evans Lee ,  Paul E. Luscher ,  Mike Welch

    IPC分类号： H01J37/32 ,  C23C16/00 ,  C23F1/02 ,  H01L21/302

    CPC分类号： H01J37/32458 ,  H01J37/321

    摘要： The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

    摘要翻译： 本发明轮廓地覆盖正在被处理的半导体晶片（即，室顶）上的腔表面，以促进或优化等离子体离子从其原始区域扩散到否则将具有相对低的等离子体离子的其它区域 。 这通过在晶片的那些区域上提供更大的室体积，否则经历等离子体离子的短缺，并且在经历等离子体离子的大量的晶片的那些区域（例如，由于在 后面的区域）。 因此，天花板的轮廓是促进等离子体离子扩散，其最好地补偿电感耦合源（例如，架空感应天线）典型的等离子体离子产生中的局部或非均匀图案。 具体地说，本发明提供了在其中产生等离子体离子或倾向聚集的区域和在其它区域中具有更大的天花板高度的较小的天花板高度（相对于晶片表面）。 更具体地说，在等离子体离子密度倾向于朝向晶片周边倾斜的上覆感应天线的情况下，天花板高度使天花板高度径向增加，即朝向晶片周边。 这促进或增加等离子体离子向晶片周边的扩散，这是天花板高度径向增加的速率的函数。

    Adjustable dc bias control in a plasma reactor
    6.
    发明授权
    Adjustable dc bias control in a plasma reactor 失效
    等离子体反应器中可调直流偏压控制

    公开(公告)号：US5605637A

    公开(公告)日：1997-02-25

    申请号：US356825

    申请日：1994-12-15

    申请人： Hongching Shan ,  Evans Lee ,  Robert Wu

    发明人： Hongching Shan ,  Evans Lee ,  Robert Wu

    IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

    CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

    摘要： A plasma chamber, and a related method for its use, in which the direct current (dc) bias on a wafer-supporting cathode is reduced by including a plasma shield that blocks plasma from reaching a region of the chamber and thereby reduces the effective surface area of a grounded anode electrode. The plasma shield has a number of narrow slits through it, small enough to preclude the passage of plasma through the shield, but large enough to permit pumping of process gases through the shield. The dc bias is further controllable by installing a chamber liner of dielectric or other material to cover a selected portion of the inside walls of the chamber. The liner also facilitates cleaning of the chamber walls to remove deposits resulting from plasma polymerization.

    摘要翻译： 一种等离子体室及其使用的相关方法，其中通过包括阻挡等离子体到达腔室的区域的等离子体屏蔽来减小晶片支撑阴极上的直流（dc）偏压，从而降低有效表面 接地阳极电极的面积。 等离子体屏蔽件具有许多通过其的狭窄的狭缝，其足够小以阻止等离子体通过屏蔽件，但足够大以允许工艺气体通过屏蔽件泵送。 通过安装电介质或其它材料的室衬套以覆盖室的内壁的选定部分，可以进一步控制直流偏压。 内衬还有助于清洁室壁以去除由等离子体聚合产生的沉积物。

    Magnet assembly for plasma containment
    7.
    发明申请
    Magnet assembly for plasma containment 有权
    用于等离子体容纳的磁体组件

    公开(公告)号：US20050115678A1

    公开(公告)日：2005-06-02

    申请号：US10726008

    申请日：2003-12-01

    申请人： Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark Pyl ,  Tetsuya Ishikawa ,  Evans Lee

    发明人： Anthony Vesci ,  Vince Kirchhoff ,  James Woodward ,  Kevin Hughes ,  Mark Pyl ,  Tetsuya Ishikawa ,  Evans Lee

    IPC分类号： H01J37/32 ,  H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/3266 ,  Y10S156/916

    摘要： A magnet assembly for a plasma process chamber has a hollow collar comprising a cross-section that is absent seams. The hollow collar has an open end face and a cap is provided to seal the open end face of the collar. A plurality of magnets are in the hollow collar, the magnets being insertable through the open end face. The collar is capable of being snap fitted onto the chamber wall. The magnet assembly can also comprise one or more of the collars such that the collars, when installed, form a substantially continuous ring about a chamber wall.

    摘要翻译： 用于等离子体处理室的磁体组件具有包括不存在接缝的横截面的中空轴环。 空心轴环具有敞开的端面，并且设有盖以密封轴环的开口端面。 多个磁体位于空心环中，磁体可通过开口端面插入。 套环能够被卡扣到室壁上。 磁体组件还可以包括一个或多个轴环，使得套环在安装时围绕室壁形成基本上连续的环。